ChipFind - документация

Электронный компонент: BCX70H

Скачать:  PDF   ZIP
11/10/00
Dimensions in inches and (millimeters)
.016 (0.4)
.056 (
1
.43
)
.037(0.95) .037(0.95)
ma
x
.
.004
(
0.1
)
.122 (3.1)
.016 (0.4)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.007 (
0
.17
5)
.0
45 (
1
.15)
.110 (2.8)
.052 (
1
.33
)
.005
(
0
.1
25)
.094 (2.4)
.0
37 (
0
.95)
TO-236AB (SOT-23)
BCX70 Series
Small Signal Transistor (NPN)
Features
NPN Silicon Epitaxial Planar Transistors for
switching and AF amplifier applications.
Suited for low level, low noise, low frequency
applications in hybrid circuits.
Low current, low voltage.
As complementary types, BCX71 Series PNP
transistors are recommended.
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
Ratings at 25C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
45
V
Collector-Emitter Voltage
V
CEO
45
V
Emitter-Base Voltage
V
EBO
5.0
V
Collector Current
I
C
200
mA
Peak Base Current
I
B
50
mA
Power Dissipation
P
tot
250
mW
Thermal Resistance Junction to Ambient Air
R
JA
500
(1)
C/W
Junction Temperature
T
j
150
C
Storage Temperature Range
T
S
65 to +150
C
Note: (1) Mounted on FR-4 printed-circuit board.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking
BCX70G = AG
Code:
BCX70H = AH
BCX70J = AJ
BCX70K = AK
Packaging Codes/Options:
E8/10K per 13" reel (8mm tape), 30K/box
E9/3K per 7" reel (8mm tape), 30K/box
New Product
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
Mounting Pad Layout
Electrical Characteristics
(T
J
= 25C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
BCX70G
V
CE =
5 V, I
C
= 10
A
--
--
--
BCX70H
V
CE =
5 V, I
C
= 10
A
30
--
--
BCX70J
V
CE =
5 V, I
C
= 10
A
40
--
--
BCX70K
V
CE =
5 V, I
C
= 10
A
100
--
--
BCX70G
V
CE =
5 V, I
C
= 2 mA
120
--
220
DC Current Gain
BCX70H
h
FE
V
CE =
5 V, I
C
= 2 mA
180
--
310
--
BCX70J
V
CE =
5 V, I
C
= 2 mA
250
--
460
BCX70K
V
CE =
5 V, I
C
= 2 mA
380
--
630
BCX70G
V
CE =
1 V, I
C
= 50 mA
50
--
--
BCX70H
V
CE =
1 V, I
C
= 50 mA
70
--
--
BCX70J
V
CE =
1 V, I
C
= 50 mA
90
--
--
BCX70K
V
CE =
1 V, I
C
= 50 mA
100
--
--
Collector-Emitter Saturation Voltage
V
CEsat
I
C
= 10 mA, I
B
= 0.25 mA
50
--
350
mV
I
C
= 50 mA, I
B
= 1.25 mA
100
--
550
Base-Emitter Saturation Voltage
V
BEsat
I
C
= 10 mA, I
B
= 0.25 mA
600
--
850
mV
I
C
= 50 mA, I
B
= 1.25 mA
700
--
1050
V
CE
= 5 V, I
C
= 2 mA
550
650
750
Base-Emitter Voltage
V
BE
V
CE
= 5 V, I
C
= 10
A
--
520
--
mV
V
CE
= 1 V, I
C
= 50 mA
--
780
--
V
CB
= 45 V, V
BE
= 0 V
--
--
20
nA
Collector Cut-off Current
I
CBO
V
CB
= 45 V, V
BE
= 0 V
--
--
20
A
T
A
= 150C
Emitter Cut-off Current
I
EBO
V
EB
= 4 V, I
C
= 0
--
--
20
nA
Gain-Bandwidth Product
f
T
V
CE
= 5 V, I
C
= 10 mA
100
250
--
MHz
f = 100 MHz
Collector-Base Capacitance
C
CBO
V
CB
= 10 V, f = 1 MHz, I
E
= 0
--
2.5
--
pF
Emitter-Base Capacitance
C
EBO
V
EB
= 0.5 V, f = 1 MHz, I
C
= 0
--
8
--
pF
V
CE
= 5 V, I
C
= 200
A,
Noise Figure
F
R
S
= 2 k
, f = 1 kHz,
--
2
6
dB
B = 200 Hz
BCX70G
--
200
Small Signal Current Gain
BCX70H
h
fe
V
CE
= 5 V, I
C
= 2 mA,
--
260
BCX70J
f = 1.0 kHZ
--
330
BCX70K
--
520
Turn-on Time at R
L
= 990
(see fig. 1)
t
on
V
CC
= 10 V, I
C
= 10 mA,
--
85
150
ns
I
B(on) =
-I
B(off)
= 1 mA
Turn-off Time at R
L
= 990
(see fig. 1)
t
off
V
CC
= 10 V, I
C
= 10 mA,
--
480
800
ns
I
B(on) =
-I
B(off)
= 1 mA
BCX70 Series
Small Signal Transistor (NPN)
Ratings and Characteristic Curves
10%
90%
90%
90%
10%
10%
t
off
t
s
t
f
t
d
t
r
t
on
INPUT
OUTPUT
Fig. 1 Switching Waveforms
BCX70 Series
Small Signal Transistor (NPN)