FEATURES
Small Signal Transistors (PNP)
Dimensions in inches and (millimeters)
.016 (0.4)
.056 (
1
.43
)
.037(0.95) .037(0.95)
ma
x
.
.004
(
0
.1
)
.122 (3.1)
.016 (0.4)
.016 (0.4)
3
1
2
Top View
.102 (2.6)
.007 (
0
.17
5
)
.0
45 (
1
.15)
.118 (3.0)
.052 (
1
.33
)
.005
(
0
.1
25)
.094 (2.4)
.0
37 (
0
.95)
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
SOT-23
4/98
PNP Silicon Epitaxial Planar Transistors
especially suited for application in class-
B video output stages of TV receivers
and monitors.
As complementary types, the NPN tran-
sistors BF820 and BF822 are recommended.
Symbol
Value
Unit
Collector-Base Voltage
BF821
BF823
V
CBO
V
CBO
300
250
V
V
Collector-Emitter Voltage
BF823
V
CEO
250
V
Collector-Emitter Voltage
BF821
V
CER
300
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
50
mA
Peak Collector Current
I
CM
100
mA
Power Dissipation at T
SB
= 50 C
P
tot
300
1)
mW
Junction Temperature
T
j
150
C
Storage Temperature Range
T
S
65 to +150
C
1)
Device on fiberglass substrate, see layout
Marking code
BF821 = 1W
BF823 = 1Y
BF821, BF823
ELECTRICAL CHARACTERISTICS
Ratings at 25 C
ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
Collector-Base Breakdown Voltage
BF821
at I
C
= 100
A, I
E
= 0
BF823
V
(BR)CBO
V
(BR)CBO
300
250
V
V
Collector-Emitter Breakdown Voltage
BF823
at I
C
= 10 mA, I
B
= 0
V
(BR)CEO
250
V
Collector-Emitter Breakdown Voltage
BF821
at R
BE
= 2.7 k
, I
C
= 10 mA
V
(BR)CER
300
V
Emitter-Base Breakdown Voltage
at I
E
= 100
A, I
C
= 0
V
(BR)EBO
5
V
Collector-Base Cutoff Current
at V
CB
= 200 V, I
E
= 0
I
CBO
10
nA
Collector-Emitter Cutoff Current
at R
BE
= 2.7 k
, V
CE
= 250 V
at R
BE
= 2.7 k
, V
CE
= 200 V, T
j
= 150 C
I
CER
I
CER
50
10
nA
A
Collector Saturation Voltage
at I
C
= 30 mA, I
B
= 5 mA
V
CEsat
0.8
V
DC Current Gain
at V
CE
= 20 V, I
C
= 25 mA
h
FE
50
Gain-Bandwidth Product
at V
CE
= 10 V, I
C
= 10 mA
f
T
60
MHz
Feedback Capacitance
at V
CE
= 30 V, I
C
= 0, f = 1 MHz
C
re
1.6
pF
Thermal Resistance Junction to Ambient Air
R
thJA
430
1)
K/W
1)
Device on fiberglass substrate, see layout
BF821, BF823
Layout for R
thJA
test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
.59 (15)
0.2 (5)
.03 (0.8)
.30 (7.5)
.12 (3)
.04 (1)
.06 (1.5)
.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
Dimensions in inches (millimeters)
.47 (12)
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