ES3F AND ES3G
SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 300 to 400 Volts Forward Current - 3.0 Amperes
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
For surface mount applications
Low profile package
Built-in strain relief
Ideal for automated placement
Easy pick and place
Superfast recovery time for high efficiency
Glass passivated chip junction
High temperature soldering:
250C/10 seconds at terminals
MECHANICAL DATA
Case: JEDEC DO-214AB molded plastic body over
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.007 ounces, 0.21 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified.
SYMBOLS
ES3F
ES3G
UNITS
Device marking code
EF
EG
Maximum repetitive peak reverse voltage
V
RRM
300
400
Volts
Working peak reverse voltage
V
RWM
225
300
Volts
Maximum RMS voltage
V
RMS
210
280
Volts
Maximum DC blocking voltage
V
DC
300
400
Volts
Maximum average forward rectified current at T
L
=100C
I
(AV)
3.0
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed on
I
FSM
100
Amps
rated load (JEDEC Method) at T
L
=100C
Maximum instantaneous forward voltage at 3.0A
V
F
1.10
Volts
Maximum DC reverse current
T
A
=25C
10.0
at working peak reverse voltage
T
A
=100C
I
R
350
A
Maximum reverse recovery time
(NOTE 1)
t
rr
35
ns
Maximum reverse recovery time
(NOTE 2)
t
rr
50
ns
Maximum reverse recovery current
(NOTE 2)
I
RM
3.0
Amps
Maximum stored charge
(NOTE 2)
Q
rr
50
ns
Typical junction capacitance
(NOTE 3)
C
J
30
pF
Typical thermal resistance
(NOTE 4)
R
JA
50
R
JL
15
C/W
Operating junction and storage temperature range
T
J
, T
STG
-55 to +150
C
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at I
F
=1.0A, di/dt=100A/
s, V
R
=30V, I
rr
=0.1I
RM
(3) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(4) Units mounted on P.C.B. with 0.31 x 0.31" (8.0 x 8.0mm) copper pad areas
NOTICE: Advanced product information is subject to change without notice
4/98
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
0.305 (7.75)
0.320 (8.13)
0.260 (6.60)
0.280 (7.11)
0.079 (2.06)
0.103 (2.62)
0.220 (5.59)
0.245 (6.22)
0.126 (3.20)
0.114 (2.90)
MAX.
DO-214AB
Dimensions in inches and (millimeters)
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
50
100
150
0
40
80
120
160
200
80
90
100
110
120
130
140
150
0
1.0
2.0
3.0
1
10
100
25
50
75
100
125
150
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
1
10
100
0.1
1
10
100
1
175
100
0
20
40
60
80
100
0.01
0.1
1
10
100
1,000
125
25
75
RATING AND CHARACTERISTIC CURVES ES3F AND ES3G
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE
CHARACTERISTICS
INST
ANT
ANEOUS FOR
W
ARD CURRENT
,
AMPERES
INST
ANT
ANEOUS REVERSE LEAKA
GE CURRENT
,
MICR
O
AMPERES
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 5 - REVERSE SWITCHING
CHARACTERISTICS
RECO
VERED ST
ORED CHARGE/REVERSE
RECO
VER
Y TIME
nC/ns
JUNCTION TEMPERATURE, C
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAP
A
CIT
ANCE, pF
REVERSE VOLTAGE, VOLTS
T
J
=100C
T
J
=25C
T
J
=25C
PULSE WIDTH=300
s
1% DUTY CYCLE
T
J
=25C
f=1.0 MH
Z
Vsig=50mVp-p
@5A,50A/
s
@5A,50A/
s
@2A,20A/
s
@2A,20A/
s
@1A,100A/
s
@1A,100A/
s
T
J
=125C
FIG. 1 - MAXIMUM FORWARD CURRENT
DERATING CURVE
LEAD TEMPERATURE, C
A
VERA
GE FOR
W
ARD RECTIFIED
CURRENT
, AMPERES
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
NUMBER OF CYCLES AT 60 H
Z
PEAK FOR
W
ARD SURGE CURRENT
,
AMPERES
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method) at T
L
=100C
RESISTIVE OR INDUCTIVE LOAD
t
rr
Q
rr
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