4/98
FESB16AT THRU FESB16JT
FAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 16.0 Amperes
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated chip junction
Low power loss
Low forward voltage, high current capability
High surge current capability
Superfast recovery time, for high efficiency
High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
MECHANICAL DATA
Case: JEDEC TO-263AB molded plastic body over
passivated chips
Terminals: Plated lead solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified.
FESB
FESB
FESB
FESB
FESB
FESB
FESB
FESB
SYMBOLS 16AT
16BT
16CT
16DT
16FT
16GT
16HT
16JT UNITS
Maximum repetitive peak reverse voltage
V
RRM
50
100
150
200
300
400
500
600 Volts
Maximum RMS voltage
V
RMS
35
70
105
140
210
280
350
420 Volts
Maximum DC blocking voltage
V
DC
50
100
150
200
300
400
500
600 Volts
Maximum average forward rectified current
at T
C
=100C
I
(AV)
16.0
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed
I
FSM
250.0
Amps
on rated load (JEDEC Method) at T
C
=100C
Maximum instantaneous forward voltage at 16A
V
F
0.975
1.3
1.5
Volts
Maximum DC reverse current
T
C
=25C
10.0
at rated DC blocking voltage
T
C
=100C
I
R
500.0
A
Maximum reverse recovery time
(NOTE1)
t
rr
35.0 50.0
ns
Typical junction capacitance
(NOTE 2)
C
J
175.0 145.0
pF
Typical thermal resistance
(NOTE 3)
R
JC
1.2
C/W
Operating and storage temperature range
T
J
, T
STG
-65 to +150
C
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to case
Dimensions in inches and (millimeters)
-T-
SEATING
PLATE
0.380 (9.65)
0.420 (10.67)
0.320 (8.13)
0.360 (9.14)
0.575 (14.60)
0.625 (15.88)
0.027 (0.686)
0.037 (0.940)
1
2
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
0.090 (2.29)
0.110 (2.79)
0.245 (6.22)
MIN
- HEATSINK
PIN 1
K
K
0.095 (2.41)
0.100 (2.54)
K
PIN 2
0.047 (1.19)
0.055 (1.40)
TO-263AB
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
0
50
100
150
0
4.0
8.0
12
16
20
1
10
100
0
50
100
150
200
250
300
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1
10
80
0.1
1
10
100
10
100
1,000
0
20
40
60
80
100
0.1
1
10
100
1,000
FIG. 1 - FORWARD CURRENT DERATING CURVE
CASE TEMPERATURE, C
RESISTIVE OR INDUCTIVE LOAD
A
VERA
GE FOR
W
ARD CURRENT
,
AMPERES
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
INST
ANT
ANEOUS FOR
W
ARD CURRENT
, AMPERES
8.3ms SINGLE HALF SINE WAVE
(JEDEC Method)
T
C
=100C
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK FOR
W
ARD SURGE CURRENT
,
AMPERES
REVERSE VOLTAGE, VOLTS
T
J
=25
C
f=1.0 MH
Z
NUMBER OF CYCLES AT 60 H
Z
T
J
=125C
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAP
A
C
IT
ANCE, pF
T
J
= 25C
PULSE WIDTH = 300
s
1% DUTY CYCLE
50-200V
300-400V
500-600V
50-400V
500-600V
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
T
J
=100C
INST
ANT
ANEOUS REVERSE LEAKA
GE CURRENT
,
MICR
O
AMPERES
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
T
J
=25C
T
J
=25C
300-600V
50-200V
RATINGS AND CHARACTERISTICS CURVES FESB16AT THRU FESB16JT
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