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Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low
On-Resistance
Specially Designed for Low Voltage DC/DC
Converters
Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics
(T
A
= 25C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
T
A
= 25C
I
D
12.5
T
J
= 150C
(1)
T
A
= 70C
10.0
A
Pulsed Drain Current
I
DM
50
Continuous Source Current (Diode Conduction)
(1)
I
S
2.3
Maximum Power Dissipation
(1)
T
A
= 25C
P
D
2.5
W
T
A
= 70C
1.6
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
Maximum Junction-to-Ambient
(1)
Thermal Resistance
R
JA
50
C/W
Notes: (1) Surface mounted on FR4 board, t
10 sec.
Mechanical Data
Case: SO-8 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250C/10 seconds at terminals
Mounting Position: Any Weight: 0.5g
GF4420
N-Channel Enhancement-Mode MOSFET
V
DS
30V R
DS(ON)
9
m
I
D
12.5A
7/11/01
5
1
4
0.244 (6.20)
0.228 (5.79)
8
0.157 (3.99)
0.150 (3.81)
0.020 (0.51)
0.013 (0.33)
0.050 (1.27)
0.009 (0.23)
0.004 (0.10)
0.197 (5.00)
0.189 (4.80)
0.069 (1.75)
0.053 (1.35)
0.019 (0.48)
0.010 (0.25)
x 45
0
8
0.050(1.27)
0.016 (0.41)
0.009 (0.23)
0.007 (0.18)
Dimensions in inches
and (millimeters)
SO-8
T
RENCH
G
EN
F
ET
0.245 (6.22)
Min.
0.035 (0.889)
0.025 (0.635)
0.050 typ.
(1.27)
0.165 (4.19)
0.155 (3.94)
0.05 (1.27)
0.04 (1.02)
Mounting Pad Layout
Electrical Characteristics
(T
J
= 25C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
A
30
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
1.0
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
=
20V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V, V
GS
= 0V
1
A
V
DS
=30V, V
GS
=0V, T
J
=55C
5
On-State Drain Current
(2)
I
D(on)
V
DS
5V, V
GS
= 10V
30
A
Drain-Source On-State Resistance
(2)
R
DS(on)
V
GS
= 10V, I
D
= 12.5A
7
9
m
V
GS
= 4.5V, I
D
= 10.5A
9.5
13
Forward Transconductance
(2)
g
fs
V
DS
= 15V, I
D
= 12.5A
50
S
Dynamic
Total Gate Charge
Q
g
V
DS
= 15V, V
GS
= 5V, I
D
= 12.5A
31
48
63
108
nC
Gate-Source Charge
Q
gs
V
DS
= 15V, V
GS
=10V
16
Gate-Drain Charge
Q
gd
I
D
= 12.5A
10
Turn-On Delay Time
t
d(on)
10
16
Rise Time
t
r
V
DD
= 15V, R
L
= 15
10
16
Turn-Off Delay Time
t
d(off)
I
D
1A, V
GEN
= 10V
105
170
ns
Fall Time
t
f
R
G
= 6
33
66
Input Capacitance
C
iss
V
GS
= 0V
3500
Output Capacitance
C
oss
V
DS
= 15V
715
pF
Reverse Transfer Capacitance
C
rss
f = 1.0MH
Z
340
Source-Drain Diode
Diode Forward Voltage
(2)
V
SD
I
S
= 2.3A, V
GS
= 0V
1.1
V
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.3A, di/dt = 100A/
s
49
90
ns
Notes: (1) Surface mounted on FR4 board, t
10 sec.
(2) Pulse test; pulse width
300
s,
duty cycle
2%
GF4420
N-Channel Enhancement-Mode MOSFET
G
D
S
V
IN
V
DD
V
GEN
R
G
R
D
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
0
10
20
30
50
0
0.5
1
1.5
2
2.5
Fig. 1 Output Characteristics
I
D
-
-
Drain Source Current (A)
V
DS
-- Drain-to-Source Voltage (V)
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0
10
20
30
40
50
Fig. 4 On-Resistance
vs. Drain Current
R
DS(ON)
-
-
On-Resistance (
)
I
D
-- Drain Current (A)
0
10
20
40
30
50
1
1.5
2
3
2.5
3.5
4
Fig. 2 Transfer Characteristics
I
D
-
-
Drain Current (A)
V
GS
-- Gate-to-Source Voltage (V)
40
V
GS
= 2.5V
0.8
0.6
1.4
1.6
1.2
1
--
50
--
25
25
50
75
100
125
150
0
R
DS(ON)
-
-
On-Resistance
(Normalized)
T
J
-- Junction Temperature (
C)
Fig. 5 On-Resistance
vs. Junction Temperature
V
GS
= 10V
I
D
= 12.5A
V
GS
= 4.5V
V
GS
= 10V
T
J
= 125
C
3.0V
6.0V
4.0V
V
DS
= 10V
10V
3.5V
25
C
--
55
C
0.6
1.4
1.2
1.6
1.8
0.8
1
--
50
--
25
25
50
75
100
125
150
0
V
GS(th)
-
-
Threshold V
oltage (V)
T
J
-- Junction Temperature (
C)
Fig. 3 Threshold Voltage
vs. Temperature
I
D
= 250
A
4.5V
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
GF4420
N-Channel Enhancement-Mode MOSFET
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
I
S
-
-
Source Current (A)
V
SD
-- Source-to-Drain Voltage (V)
T
J
= 125
C
Fig. 9 Source-Drain Diode
Forward Voltage
25
C
--55
C
V
GS
= 0V
0
2
4
6
8
10
0
10
20
40
30
Q
g
-- Gate Charge (nC)
Fig. 7 Gate Charge
50
60
V
GS
-
-
Gate-to-Source V
oltage (V)
V
DS
= 15V
I
D
= 12.5A
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0
5
10
15
30
20
25
Fig. 8 Capacitance
C -
-
Capacitance (pF)
V
DS
-- Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
f = 1MH
Z
V
GS
= 0V
Fig. 6 On-Resistance
vs. Gate-to-Source Voltage
I
D
= 12.5A
0
0.005
0.01
0.02
0.015
0.025
0.03
2
R
DS(ON)
-
-
On-Resistance (
)
V
GS
-- Gate-to-Source Voltage (V)
4
6
8
10
T
J
= 125
C
25
C
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
GF4420
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
GF4420
N-Channel Enhancement-Mode MOSFET
37
36
38
40
41
42
43
39
--50
--25
25
50
75
100
125
0
Fig. 10 Breakdown Voltage
vs. Junction Temperature
BV
DSS
-
-
Breakdown V
oltage (V)
T
J
-- Junction Temperature (
C)
150
I
D
= 250
A
Fig. 11 Transient Thermal
Impedance
Fig. 13 Maximum Safe Operating Area
I
D
-
-
Drain Current (A)
V
DS
-- Drain-Source Voltage (V)
0.01
0.1
0.1
1
1
10
100
10
100
Fig. 12 Power vs. Pulse Duration
V
GS
= 10V
Single Pulse
on 1-in
2
2oz Cu.
T
A
= 25
C
R
DS(ON)
Limit
100
s
1ms
10ms
100ms
1s
DC
10s
0.1
0.01
0
10
20
30
40
50
60
70
1
10
100
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