T
RENCH
G
EN
F
ET
Maximum Ratings and Thermal Characteristics
(T
C
= 25C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(1)
I
D
50
A
Pulsed Drain Current
I
DM
100
Maximum Power Dissipation
T
C
= 25C
P
D
62.5
W
T
C
= 100C
25
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
Lead Temperature (1/8" from case for 5 sec.)
T
L
275
C
Junction-to-Case Thermal Resistance
R
JC
2.0
C/W
Junction-to-Ambient Thermal Resistance
R
JA
62.5
C/W
Notes: (1) Maximum DC current limited by the package
GFP50N03
N-Channel Enhancement-Mode MOSFET
V
DS
30V R
DS(ON)
13
m
I
D
50A
5/1/01
Features
Advanced Process Technology
High Density Cell Design for Ultra Low
On-Resistance
Specially Designed for Low Voltage DC/DC
Converters
Fast Switching for High Efficiency
Mechanical Data
Case: JEDEC TO-220AB molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250C/10 seconds at terminals
Mounting Torque: 10 in-lbs maximum
Weight: 2.0g
0.154 (3.91)
0.142 (3.60)
Dia.
0.560 (14.22)
0.530 (13.46)
G
D
S
1.148 (29.16)
1.118 (28.40)
0.022 (0.56)
0.014 (0.36)
0.113 (2.87)
0.102 (2.56)
0.205 (5.20)
0.190 (4.83)
0.360 (9.14)
0.330 (8.38)
PIN
0.415 (10.54)
Max.
0.105 (2.67)
0.095 (2.41)
D
0.155 (3.93)
0.134 (3.40)
0.635 (16.13)
0.580 (14.73)
0.410 (10.41)
0.350 (8.89)
0.160 (4.06)
0.09 (2.28)
0.037 (0.94)
0.026 (0.66)
0.603 (15.32)
0.573 (14.55)
0.185 (4.70)
0.170 (4.31)
0.055 (1.39)
0.045 (1.14)
0.104 (2.64)
0.094 (2.39)
*
May be notched or flat
*
TO-220AB
G
D
S
Dimensions in inches
and (millimeters)
Electrical Characteristics
(T
J
= 25C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
A
30
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
1.0
3.0
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= 20V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V, V
GS
= 0V
1
A
On-State Drain Current
(1)
I
D(on)
V
DS
5V, V
GS
= 10V
60
A
Drain-Source On-State Resistance
(1)
R
DS(on)
V
GS
= 10V, I
D
= 25A
11
13
m
V
GS
= 4.5V, I
D
= 20A
15
20
Forward Transconductance
(1)
g
fs
V
DS
= 10V, I
D
= 25A
40
S
Diode Forward Voltage
V
SD
I
S
= 25A, V
GS
= 0V
0.9
1.3
V
Dynamic
(1)
V
DS
= 15V, V
GS
= 5V, I
D
= 50A
16
22
Total Gate Charge
Q
g
V
DS
= 15V, V
GS
= 10V
35
60
Gate-Source Charge
Q
gs
I
D
= 50A
8
nC
Gate-Drain Charge
Q
gd
6
Turn-On Delay Time
t
d(on)
11
20
Rise Time
t
r
V
DD
= 15V, R
L
= 15
11
20
ns
Turn-Off Delay Time
t
d(off)
I
D
1A, V
GEN
= 10V
48
80
Fall Time
t
f
R
G
= 6
15
30
Input Capacitance
C
iss
V
GS
= 0V
1850
Output Capacitance
C
oss
V
DS
= 15V
315
pF
Reverse Transfer Capacitance
C
rss
f = 1.0MH
Z
145
Source-Drain Reverse Recovery Time
t
rr
I
F
= 25A, di/dt = 100A/
s
160
ns
Note:
(1) Pulse test; pulse width
300
s, duty cycle
2%
GFP50N03
N-Channel Enhancement-Mode MOSFET
G
D
S
V
IN
V
DD
V
GEN
R
G
R
D
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
0
20
40
80
0
1
2
3
4
5
Fig. 1 Output Characteristics
I
D
-
-
Drain Source Current (A)
V
DS
-- Drain-to-Source Voltage (V)
0
0.01
0.015
0.005
0.02
0.025
0.03
0
20
40
60
80
100
Fig. 4 On-Resistance
vs. Drain Current
R
DS(ON)
-
-
On-Resistance (
)
I
D
-- Drain Current (A)
0
10
20
40
30
50
60
1
2
3
4
5
Fig. 2 Transfer Characteristics
I
D
-
-
Drain Current (A)
60
2.5V
0.6
1.2
1.4
1.6
0.8
1
--50
--25
25
50
75
100
125
150
0
R
DS(ON)
-
-
On-Resistance
(Normalized)
T
J
-- Junction Temperature (
C)
Fig. 5 On-Resistance
vs. Junction Temperature
V
GS
= 10V
I
D
= 25A
6.0V
10V
T
J
= 125
C
--55
C
3.0V
4.0V
4.5V
3.5V
5.0V
25
C
V
DS
= 10V
V
GS
= 4.5V
V
GS
-- Gate-to-Source Voltage (V)
0.8
0.6
1
1.2
1.4
1.6
1.8
--50
--25
25
50
75
100
125
150
0
V
GS(th)
-
-
Threshold V
oltage (V)
T
J
-- Junction Temperature (
C)
Fig. 3 Threshold Voltage
vs. Temperature
I
D
= 250
A
5V
V
GS
=10V
GFP50N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
0
500
1000
1500
2000
2500
0
5
10
15
30
20
25
Fig. 8 Capacitance
C
iss
C
rss
C
oss
f = 1MH
Z
V
GS
= 0V
0
2
4
6
8
10
0
10
20
35
30
Fig. 7 Gate Charge
V
DS
= 15V
I
D
= 15A
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
T
J
= 125
C
Fig. 9 Source-Drain Diode
Forward Voltage
25
C
--55
C
V
GS
= 0V
I
S
-
-
Source Current (A)
V
SD
-- Source-to-Drain Voltage (V)
Q
g
-- Charge (nC)
V
GS
-
-
Gate-to-Source V
oltage (V)
C -
-
Capacitance (pF)
V
DS
-- Drain-to-Source Voltage (V)
0
0.005
0.01
0.02
0.03
0.04
0.015
0.025
0.035
2
4
6
8
10
Fig. 6 On-Resistance
vs. Gate-to-Source Voltage
R
DS(ON)
-
-
On-Resistance (
)
V
GS
-- Gate-to-Source Voltage (V)
I
D
= 25A
T
J
= 125
C
25
C
GFP50N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
GFP50N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
Fig. 11 Transient Thermal
Impedance
Fig. 13 Maximum Safe Operating Area
I
D
-
-
Drain Current (A)
V
DS
-- Drain-Source Voltage (V)
0.1
1
1
10
100
1000
0.01
0.1
1
10
100
0.1
0.01
0.001
0.0001
1
10
Fig. 12 Power vs. Pulse Duration
V
GS
= 10V
Single Pulse
R
JC
= 2.0
C/W
T
A
= 25
C
R
DS(ON)
Limit
100
s
1ms
10m
s
DC
100ms
0.001
0.01
0.0001
0
200
400
600
800
1000
0.1
1
10
1. Duty Cycle, D = t
1
/ t
2
2. R
JA
(t) = R
JA(norm)
*R
JA
3. R
JA
= 2.0
C/W
4. T
J
-- T
A
= P
DM
* R
JA
(t)
37
36
38
40
43
44
39
--50
--25
25
50
75
100
125
0
Fig. 10 Breakdown Voltage
vs. Junction Temperature
150
I
D
= 250
A
BV
DSS
-
-
Breakdown V
oltage (V)
T
J
-- Junction Temperature (
C)
41
42
Single Pulse
R
JA
= 2.0
C/W
T
C
= 25
C
Pulse Duration (sec.)
Power (W)
Pulse Duration (sec.)
R
JA
(norm)
-
-
Normalized Thermal
Impedance
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