Maximum Ratings and Thermal Characteristics
(T
C
= 25C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(1)
I
D
70
A
Pulsed Drain Current
I
DM
200
Maximum Power Dissipation
T
C
= 25C
P
D
62.5
W
T
C
= 100C
25
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
Lead Temperature (1/8" from case for 5 sec.)
T
L
275
C
Junction-to-Case Thermal Resistance
R
JC
2.0
C/W
Junction-to-Ambient Thermal Resistance
R
JA
62.5
C/W
Notes: (1) Maximum DC current limited by the package
GFP70N03
N-Channel Enhancement-Mode MOSFET
V
DS
30V R
DS(ON)
8
m
I
D
70A
5/16/01
Features
Advanced Process Technology
High Density Cell Design for Ultra Low
On-Resistance
Specially Designed for Low Voltage DC/DC
Converters
Fast Switching for High Efficiency
Mechanical Data
Case: JEDEC TO-220AB molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250C/10 seconds, 0.17" (4.3mm) from case
Mounting Torque: 10 in-lbs maximum
Weight: 2.0g
T
RENCH
G
EN
F
ET
0.154 (3.91)
0.142 (3.60)
Dia.
0.560 (14.22)
0.530 (13.46)
G
D
S
1.148 (29.16)
1.118 (28.40)
0.022 (0.56)
0.014 (0.36)
0.113 (2.87)
0.102 (2.56)
0.205 (5.20)
0.190 (4.83)
0.360 (9.14)
0.330 (8.38)
PIN
0.415 (10.54)
Max.
0.105 (2.67)
0.095 (2.41)
D
0.155 (3.93)
0.134 (3.40)
0.635 (16.13)
0.580 (14.73)
0.410 (10.41)
0.350 (8.89)
0.160 (4.06)
0.09 (2.28)
0.037 (0.94)
0.026 (0.66)
0.603 (15.32)
0.573 (14.55)
0.185 (4.70)
0.170 (4.31)
0.055 (1.39)
0.045 (1.14)
0.104 (2.64)
0.094 (2.39)
*
May be notched or flat
*
TO-220AB
G
D
S
Dimensions in inches
and (millimeters)
Electrical Characteristics
(T
J
= 25C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
A
30
--
--
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
1.0
--
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= 20V
--
--
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V, V
GS
= 0V
--
--
1
A
On-State Drain Current
(2)
I
D(on)
V
DS
5V, V
GS
= 10V
70
--
--
A
Drain-Source On-State Resistance
(2)
R
DS(on)
V
GS
= 10V, I
D
= 35A
--
6
8
m
V
GS
= 4.5V, I
D
= 30A
--
9
11
Forward Transconductance
(2)
g
fs
V
DS
= 15V, I
D
= 35A
--
61
--
S
Dynamic
Total Gate Charge
Q
g
V
DS
=15V, V
GS
=5V, I
D
=35A
--
34
48
--
63
95
Gate-Source Charge
Q
gs
V
DS
= 15V, V
GS
= 10V
--
11
--
nC
Gate-Drain Charge
Q
gd
I
D
= 35A
--
11
--
Turn-On Delay Time
t
d(on)
V
DD
= 15V, R
L
= 15
--
9
14
Rise Time
t
r
I
D
1A, V
GEN
= 10V
--
9
14
Turn-Off Delay Time
t
d(off)
R
G
= 6
--
100
167
ns
Fall Time
t
f
--
31
62
Input Capacitance
C
iss
V
GS
= 0V
--
3400
--
Output Capacitance
C
oss
V
DS
= 15V
--
618
--
pF
Reverse Transfer Capacitance
C
rss
f = 1.0MH
Z
--
300
--
Source-Drain Diode
Max Diode Forward Current
I
S
--
--
--
35
A
Diode Forward Voltage
(2)
V
SD
I
S
= 35A, V
GS
= 0V
--
0.9
1.3
V
Notes:
(1) Maximum DC current limited by the package
(2) Pulse test; pulse width
300
s,
duty cycle
2%
GFP70N03
N-Channel Enhancement-Mode MOSFET
G
D
S
V
IN
V
DD
V
GEN
R
G
R
D
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
0
10
20
30
50
60
70
0
0.5
1
1.5
2
2.5
Fig. 1 Output Characteristics
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0
20
40
60
80
100
Fig. 4 On-Resistance
vs. Drain Current
0
10
20
40
30
50
70
60
1
2
3
4
5
Fig. 2 Transfer Characteristics
40
V
GS
= 2.5V
0.8
0.6
1.4
1.6
1.2
1
--50
--25
25
50
75
100
125
150
0
Fig. 5 On-Resistance
vs. Junction Temperature
V
GS
= 10V
I
D
= 35A
V
GS
= 4.5V
25
C
V
GS
= 10V
T
J
= 125
C
--55
C
3.0V
3.5V
6.0V
4.0V
V
DS
= 10V
10V
0.6
1.4
1.2
1.6
1.8
0.8
1
--50
--25
25
50
75
100
125
150
0
Fig. 3 Threshold Voltage
vs. Temperature
I
D
= 250
A
I
D
-
-
Drain Source Current (A)
V
DS
-- Drain-to-Source Voltage (V)
R
DS(ON)
-
-
On-Resistance (
)
I
D
-- Drain Current (A)
I
D
-
-
Drain Current (A)
V
GS
-- Gate-to-Source Voltage (V)
R
DS(ON)
-
-
On-Resistance
(Normalized)
T
J
-- Junction Temperature (
C)
V
GS(th)
-
-
Threshold V
oltage (V)
T
J
-- Junction Temperature (
C)
4.5V
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
GFP70N03
N-Channel Enhancement-Mode MOSFET
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0
5
10
15
30
20
25
Fig. 8 Capacitance
C
iss
C
rss
C
oss
f = 1MH
Z
V
GS
= 0V
0
2
4
6
8
10
0
10
20
40
30
Fig. 7 Gate Charge
50
60
70
V
DS
= 15V
I
D
= 35A
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
T
J
= 125
C
Fig. 9 Source-Drain Diode
Forward Voltage
25
C
--55
C
V
GS
= 0V
I
S
-
-
Source Current (A)
V
SD
-- Source-to-Drain Voltage (V)
Q
g
-- Gate Charge (nC)
V
GS
-
-
Gate-to-Source V
oltage (V)
C -
-
Capacitance (pF)
V
DS
-- Drain-to-Source Voltage (V)
0
0.005
0.01
0.02
0.015
0.025
0.03
2
4
6
8
10
Fig. 6 On-Resistance
vs. Gate-to-Source Voltage
I
D
= 35A
T
J
= 125
C
25
C
R
DS(ON)
-
-
On-Resistance (
)
V
GS
-- Gate-to-Source Voltage (V)
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
GFP70N03
N-Channel Enhancement-Mode MOSFET
GFP70N03
N-Channel Enhancement-Mode MOSFET
36
35
37
39
40
38
--50
--25
25
50
75
100
125
0
Fig. 10 Breakdown Voltage
vs. Junction Temperature
150
I
D
= 250
A
BV
DSS
-
-
Breakdown V
oltage (V)
T
J
-- Junction Temperature (
C)
Fig. 13 Maximum Safe Operating Area
0.0001
0.001
0.01
0.01
0.1
0.1
1
1
10
I
D
-
-
Drain Current (A)
V
DS
-- Drain-Source Voltage (V)
Fig. 11 Thermal Impedance
R
JA
(norm)
-
-
Normalized
Thermal
Impedance
Pulse Duration (sec.)
Single Pulse
0.001
0.0001
0.01
0.1
0
0.1
1
1
10
100
1000
10
100
200
400
600
800
1000
1
10
Fig. 12 Power vs. Pulse Duration
Power (W)
Pulse Duration (sec.)
Single Pulse
R
JC
= 2.0
C/W
T
C
= 25
C
V
GS
= 10V
Single Pulse
R
JC
= 2.0 C/W
T
C
= 25
C
R
DS
(ON)
Limit
100
s
1ms
10ms
DC
D = 0.5
0.2
0.1
t
1
t
2
P
DM
1. Duty Cycle, D = t
1
/t
2
2. R
JC
(t) = R
JC(norm)
*R
JC
3. R
JC
= 2.0
C/W
4. T
J
- T
C
= P
DM
* R
JC
(t)
0.05
100ms
Ratings and
Characteristic Curves
(T
A
= 25C unless otherwise noted)
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