MPS2222A
SMALL SIGNAL TRANSISTORS (NPN)
FEATURES
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
On special request, this transistor is
also manufactured in the pin
configuration TO-18.
This transistor is also available in the
SOT-23 case with the type designation
MMBT2222A
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18g
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
75
Volts
Collector-Emitter Voltage
V
CEO
40
Volts
Emitter-Base Voltage
V
EBO
6.0
Volts
Collector Current-Continuous
I
C
600
mA
Power Dissipation at T
A
=25
C
P
tot
625
mW
Derate above 25
C
5.0
mW/
C
Power Dissipation at T
C
=25
C
P
tot
1.5
W
Derate above 25
C
12
mW/
C
Thermal Resistance, Junction to Ambient Air
R
QJA
200
C/W
Thermal Resistance Junction to Case
R
QJC
83.3
C/W
Junction Temperature
T
j
150
C
Storage Temperature Range
T
S
55 to +150
C
0.181 (4.6)
m
i
n
.
0.492
(12.5
)
0.1
81 (4
.6)
0.142 (3.6)
0.098 (2.5)
max.
0.022 (0.55)
E
C
B
TO-92
2/22/99
Dimensions in inches and (millimeters)
ADVANCED INFORMATION
MPS2222A
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at I
C
= 10
mA, I
E
= 0
V
(BR)CBO
75
Volts
Collector-Emitter Breakdown Voltage
(1)
at I
C
= 10 mA, I
B
= 0
V
(BR)CEO
40
Volts
Emitter-Base Breakdown Voltage
at I
E
= 10
mA, I
C
= 0
V
(BR)EBO
6.0
Volts
Collector-Emitter Saturation Voltage
(1)
at I
C
= 150 mA, I
B
= 15 mA
V
CEsat
0.6
0.3
Volts
at I
C
= 500 mA, I
B
= 50 mA
V
CEsat
1.0
Volts
Base-Emitter Saturation Voltage
(1)
at I
C
= 150 mA, I
B
= 15 mA
V
BEsat
1.2
Volts
at I
C
= 500 mA, I
B
= 50 mA
V
BEsat
2.0
Volts
Collector Cutoff Current
I
CEX
10
nA
at V
EB
= 3 V, V
CE
= 60 V
Collector Cutoff Current
I
CBO
mA
at V
CB
= 60 V, I
E
= 0
0.01
at V
CB
= 50 V, I
E
= 0, T
A
=125
C
10
Emitter Cutoff Current
at V
EB
= 3 V, I
C
= 0
I
EBO
100
nA
Base Cutoff Current
at V
CE
= 60 V, V
EB
= 3.0 V
I
BL
20
nA
DC Current Gain
at V
CE
= 10 V, I
C
= 0.1 mA
h
FE
35
at V
CE
= 10 V, I
C
= 1 mA
h
FE
50
at V
CE
= 10 V, I
C
= 10 mA
h
FE
75
at V
CE
= 10 V, I
C
= 10 mA, T
A
=-55
C
h
FE
35
at V
CE
= 10 V, I
C
= 150 mA
(1)
h
FE
100
300
at V
CE
= 1.0 V, I
C
= 150 mA
(1)
h
FE
50
at V
CE
= 10 V, I
C
= 500 mA
(1)
h
FE
40
Input Impedance
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
h
ie
2.0
8.0
k
W
at V
CE
= 10 V, I
C
= 10 mA, f = 1 kHz
0.25
1.25
Voltage Feedback Ratio
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
h
re
8 10
-4
at V
CE
= 10 V, I
C
= 10 mA, f = 1 kHz
4 10
-4
Current Gain-Bandwidth Product
at V
CE
= 20 V, I
C
= 20 mA, f = 100 MHz
f
T
300
MHz
Output Capacitance
at V
CB
= 10 V, f = 1 kHz, I
E
=0
C
OBO
8.0
pF
Input Capacitance
at V
EB
= 0.5 V, f = 1 kHz, I
C
=0
C
IBO
25
pF
NOTES
(1) Pulse test: Pulse width 300
ms - Duty cycle 2%
MPS2222A
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Small Signal Current Gain
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
h
fe
50
300
at V
CE
= 10 V, I
C
= 10 mA, f = 1 kHz
75
375
Output Admittance
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
h
oe
5.0
35
mS
at V
CE
= 10 V, I
C
= 10 mA, f = 1 kHz
25
200
Collector Base Time Constant
r
b
C
C
150
ps
at I
E
= 20 mA, V
CB
= 20 V, f = 31.8 MHz
Noise Figure
at V
CE
= 10 V, I
C
= 100
mA, R
S
= 1 k
W
NF
4.0
dB
f = 1 kH
Z
Delay Time (see fig.1)
at I
B1
= 15 mA, I
C
= 150 mA, V
CC
=30V, V
BE
= -0.5V
t
d
10
ns
Rise Time (see fig.1)
at I
B1
= 15 mA, I
C
= 150 mA, V
CC
=30V, V
BE
= -0.5V
t
r
25
ns
Storage Time (see fig. 2)
at I
B1
= I
B2
= 15 mA, I
C
= 150 mA, V
CC
=30V
t
s
225
ns
Fall Time (see fig. 2)
at I
B1
= I
B2
= 15 mA, I
C
= 150 mA, V
CC
=30V
t
f
60
ns
200
W
+30V
-4 V
< 2 ns
0
C * < 10 pF
S
C < 10 pF
S
*
200
W
1.0 to 100
ms, DUTY CYCLE 2%
1.0 to 100
ms, DUTY CYCLE 2%
+30V
+16 V
-2 V
1k
W
1k
W
Scope rise time < 4ns
*Total shunt capacitance of test jig,
connectors and oscilloscope
< 20 ns
0
+16 V
-14 V
SWITCHING TIME EQUIVALENT TEST CIRCUIT
FIGURE 1 - TURN-ON TIME
FIGURE 2 - TURN-OFF TIME
PDF 
ZIP