MPS2907A
SMALL SIGNAL TRANSISTORS (PNP)
FEATURES
PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
On special request, this transistor is also
manufactured in the pin configuration
TO-18.
This transistor is also available in the
SOT-23 case with the type designation
MMBT2907A.
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
60
Volts
Collector-Emitter Voltage
V
CEO
60
Volts
Emitter-Base Voltage
V
EBO
5.0
Volts
Collector Current
I
C
600
mA
Power Dissipation at T
A
= 25C
P
tot
625
mW
Derate above 25C
5.0
mW/C
Power Dissipation at T
C
= 25C
P
tot
1.5
mW
Derate above 25C
12
mW/C
Thermal Resistance Junction to Ambient Air
R
JA
200
C/W
Thermal Resistance Junction Case
R
JC
83.3
C/W
Junction Temperature
T
j
150
C
Storage Temperature Range
T
S
500 to +150
C
NOTES:
(1) Valid provided that leads are kept at ambient temperature.
0.181 (4.6)
m
i
n
.
0.492
(12.5
)
0.1
81 (4
.6)
0.142 (3.6)
0.098 (2.5)
max.
0.022 (0.55)
E
C
B
TO-92
12/16/98
Dimensions in inches and (millimeters)
PRELIMINARY
PRELIMINARY
PRELIMINARY
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at I
C
= 10
A, I
E
= 0
V
(BR)CBO
60
Volts
Collector-Emitter Breakdown Voltage
at I
C
= 10 mA, I
B
= 0
V
(BR)CEO
60
Volts
Emitter-Base Breakdown Voltage
at I
E
= 10
A, I
C
= 0
V
(BR)EBO
5
Volts
Collector-Emitter Saturation Voltage
at I
C
= 150 mA, I
B
= 15 mA
V
CEsat
0.4
Volts
at I
C
= 500 mA, I
B
= 50 mA
V
CEsat
1.6
Volts
Base-Emitter Saturation Voltage
at I
C
= 150 mA, I
B
= 15 mA
V
BEsat
1.3
Volts
at I
C
= 500 mA, I
B
= 50 mA
V
BEsat
2.6
Volts
Collector Cutoff Current
at V
EB
= 0.5 V, V
CE
= 30 V
I
CEX
50
nA
Collector Cutoff Current
I
CBO
A
at V
CB
= 50 V, I
E
= 0
0.01
at V
CB
= 50 V, I
E
= 0, T
A
=150
C
10
Base Cutoff Current
at V
EB
= 0.5 V, V
CE
= 30 V
I
BL
50
nA
DC Current Gain
at V
CE
= 10 V, I
C
= 0.1 mA
h
FE
75
at V
CE
= 10 V, I
C
= 1 mA
h
FE
100
at V
CE
= 10 V, I
C
= 10 mA
h
FE
100
at V
CE
= 10 V, I
C
= 150 mA
h
FE
100
300
at V
CE
= 10 V, I
C
= 500 mA
h
FE
50
Gain-Bandwidth Product
at V
CE
= 20 V, I
C
= 50 mA, f = 100 MHz
f
T
200
MHz
Output Capacitance
at V
CB
= 10 V, f = 1 MHz, I
E
= 0
C
obo
8.0
pF
Emitter-Base Capacitance
at V
EB
= 2.0 V, f = 1 MHz, I
E
= 0
C
ibo
30
pF
MPS2907A
SWITCHING TIME EQUIVALENT TEST CIRCUIT
FIGURE 1 - DELAY AND RISE TIME TEST CIRCUIT
FIGURE 2 - STORAGE AND FALL TIME TEST CIRCUIT
MPS2907A
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Turn-On Time
at I
B1
= 15 mA, I
C
= 150 mA, V
CC
= 30 V
t
on
45
ns
Delay Time (See Fig. 1)
at I
B1
= 15 mA, I
C
= 150 mA, V
CC
= 30 V
t
d
35
ns
Rise Time (See Fig. 1)
at I
B1
= 15 mA, I
C
= 150 mA, V
CC
= 30 V
t
r
35
ns
Turn-Off Time
at I
B1
= I
B2
= 15 mA, I
C
= 150 mA, V
CC
= 6 V
t
off
100
ns
Storage Time (See Fig. 2)
at I
B1
= I
B2
= 15 mA, I
C
= 150 mA, V
CC
= 6 V
t
s
225
ns
Fall Time (See Fig. 2)
at I
B1
= I
B2
= 15 mA, I
C
= 150 mA, V
CC
= 6 V
t
f
75
ns
200ns
1.0 k
-30V
200
To Oscilloscope
Rise Time
5.0 ns
200ns
1.0 k
-6.0 V
37
To Oscilloscope
Rise Time
5.0 ns
INPUT
Z
o
= 50
PRF = 150 PPS
Rise Time
2.0 ns
P.W. < 200 ns
INPUT
Z
o
= 50
PRF = 150 PPS
Rise Time
2.0 ns
P.W. < 200 ns
0
0
-16 V
-30 V
50
+15 V
50
1.0 k
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