RGF1A THRU RGF1M
SURFACE MOUNT GLASS PASSIVATED JUNCTION
FAST SWITCHING RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Ideal for surface mount automotive applications
High temperature metallurgically bonded construction
Glass passivated cavity-free junction
Capable of meeting environmental standards of
MIL-S-19500
Built-in strain relief
Easy pick and place
Fast switching for high efficiency
High temperature soldering guaranteed:
450C/5 seconds at terminals
Complete device submersible temperature of
265C for 10 seconds in solder bath
MECHANICAL DATA
Case: JEDEC DO-214BA molded plastic over glass body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.0048 ounce, 0.120 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified.
SYMBOLS
RGF1A
RGF1B
RGF1D
RGF1G
RGF1J
RGF1K
RGF1M
UNITS
Device Marking Code
RA
RB
RD
RG
RJ
RK
RM
Maximum repetitive peak reverse voltage
V
RRM
50
100
200
400
600
800
1000
Volts
Maximum RMS voltage
V
RMS
35
70
140
280
420
560
700
Volts
Maximum DC blocking voltage
V
DC
50
100
200
400
600
800
1000
Volts
Maximum average forward rectified current
at T
L
=120C
I
(AV)
1.0
Amp
Peak forward surge current 8.3ms single half sine-
wave superimposed on rated load (JEDEC method)
I
FSM
30.0
Amps
Maximum instantaneous forward voltage at 1.0A
V
F
1.30
Volts
Maximum full load reverse current,
full cycle average,
T
A
=55C
I
R(AV)
50.0
A
Maximum DC reverse current
T
A
=25C
5.0
at rated DC blocking voltage
T
A
=125C
I
R
100
A
Maximum reverse recovery time
(NOTE 1)
t
rr
150 250
500
ns
Typical junction capacitance
(NOTE 2)
C
J
8.5
pF
Typical thermal resistance
(NOTE 3)
R
JA
85.0
C/W
R
JL
28.0
Operating junction and storage temperature range
T
J
, T
STG
-65 to +175
C
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MHz and applied Vr=4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead
P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas
4/98
0.167 (4.24)
0.187 (4.75)
0.0065 (0.17)
0.0105 (0.27)
0.030 (0.76)
0.060 (1.52)
0.006
0.152
TYP.
0.196 (4.98)
0.226 (5.74)
0.094 (2.39)
0.114 (2.90)
0.106 (2.69)
0.118 (3.00)
0.040 (1.02)
0.060 (1.52)
0.098 (2.49)
0.108 (2.74)
DO-214BA
MODIFIED J-BEND
PA
TENTED*
Dimensions in inches and (millimeters)
*
Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead
forming by Patent No. 5,151,846
1
10
100
0
5
10
15
20
25
30
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
1
10
0.5
100
110
120
130
140
150
160
175
0
1
1
10
100
1
10
100
0
20
40
60
80
100
0.01
0.1
1
10
0.01
0.1
1
10
100
0.1
1
10
100
RATINGS AND CHARACTERISTIC CURVES RGF1A THRU RGF1M
FIG. 1 - FORWARD CURRENT DERATING CURVE
LEAD TEMPERATURE, C
A
VERA
GE FOR
W
ARD RECTIFIED CURRENT
,
AMPERES
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
NUMBER OF CYCLES AT 60 Hz
PEAK FOR
W
ARD SURGE CURRENT
,
AMPERES
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
INST
ANT
ANEOUS FOR
W
ARD CURRENT
,
AMPERES
INST
ANT
ANEOUS REVERSE CURRENT
,
MICR
O
AMPERES
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
JUNCTION, CAP
A
CIT
ANCE, pF
TRANSIENT
THERMAL IMPED
ANCE (
C/W)
REVERSE VOLTAGE, VOLTS
T
J
=T
J
max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
MOUNTED ON 0.2 x 0.2" (5 x 7mm)
COPPER PAD AREAS
T
J
=25C
T
J
=25C
PULSE WIDTH=300
s
1% DUTY CYCLE
T
J
=25C
f=1.0 MH
Z
Vsig=50mVp-p
T
J
=100C
T
J
=125C
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
t, PULSE DURATION, sec
60 H
Z
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED on
0.2 x 0.2" (5.0 x 5.0mm)
COPPER PAD AREAS
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