UGB8AT THRU UGB8DT
ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 200 Volts Forward Current - 8.0 Amperes
FEATURES
Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
Ideally suited for use in very high frequency
switching power supplies, inverters and as a free
wheeling diode
Ultrafast reverse
recovery time for high efficiency
Soft recovery characteristics
Excellent high temperature switching
Glass passivated chip junction
High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
MECHANICAL DATA
Case: JEDEC TO-263AB molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified.
SYMBOLS
UGB8AT
UGB8BT
UGB8CT
UGB8DT
UNITS
Maximum repetitive peak reverse voltage
V
RRM
50
100
150
200
Volts
Maximum RMS voltage
V
RMS
35
70
105
140
Volts
Maximum DC blocking voltage
V
DC
50
100
150
200
Volts
Maximum average forward rectified current
at T
C
=100C
I
(AV)
8.0
Amps
Peak forward surge current
8.3 ms single half sine-wave superimposed
I
FSM
150.0
Amps
on rated load (JEDEC Method) at T
C
=100C
Maximum instantaneous forward voltage at: 8.0
1.00
20A
V
F
1.20
Volts
5.0A, T
J
=150C
0.95
Maximum DC reverse current
T
C
=25C
10.0
at rated DC blocking voltage
T
C
=100C
I
R
300.0
A
Maximum reverse recovery time
(NOTE 1)
t
rr
20.0
ns
Maximum reverse recovery time
T
J
=25C
30.0
(NOTE 2)
T
J
=100C
t
rr
50.0
ns
Maximum recovered stored charge
T
J
=25C
20.0
(NOTE 2)
T
J
=100C
Q
rr
45.0
nC
Typical junction capacitance
(NOTE 3)
C
J
45.0
pF
Typical thermal resistance
(NOTE 4)
R
JC
4.0
C/W
Operating junction and storage temperature range
T
J
, T
STG
-55 to+150
C
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) T
rr
and Q
rr
measured at I
F
=8.0A, V
R
=30V, di/dt=50A/
s, I
rr
=10% I
RM
for meaurement of t
rr
(3) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(4) Thermal resistance from junction to case
Dimensions in inches and (millimeters)
-T-
SEATING
PLATE
0.380 (9.65)
0.420 (10.67)
0.320 (8.13)
0.360 (9.14)
0.575 (14.60)
0.625 (15.88)
0.027 (0.686)
0.037 (0.940)
1
2
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
0.090 (2.29)
0.110 (2.79)
0.245 (6.22)
MIN
- HEATSINK
PIN 1
K
K
0.095 (2.41)
0.100 (2.54)
K
PIN 2
0.047 (1.19)
0.055 (1.40)
TO-263AB
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
10/27/98
0
25
50
75
100
125
150
175
0
2.0
4.0
6.0
8.0
10
12
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
1
10
100
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
1
10
100
10
100
1,000
0
20
40
60
80
100
0.01
0.1
1
10
100
1,000
0.01
0.1
1
10
100
0.1
1
10
100
FIG. 1 - FORWARD CURRENT DERATING
CURVE
CASE TEMPERATURE, C
A
VERA
GE FOR
W
ARD RECTIFIED CURRENT
,
AMPERES
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
NUMBER OF CYCLES AT 60 Hz
PEAK FOR
W
ARD SURGE CURRENT
,
AMPERES
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE
CHARACTERISTICS
INST
ANT
ANEOUS FOR
W
ARD CURRENT
,
AMPERES
INST
ANT
ANEOUS REVERSE LEAKA
GE CURRENT
,
MICR
O
AMPERES
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 5 - REVERSE SWITCHING
CHARACTERISTICS
RECO
VERED ST
ORED CHARGE/REVERSE
RECO
VER
Y TIME
nC/ns
JUNCTION TEMPERATURE, C
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAP
A
CIT
ANCE, pF
REVERSE VOLTAGE, VOLTS
T
C
=100
C
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
T
J
=100C
T
J
=25C
T
J
=25C
PULSE WIDTH=300
s
1% DUTY CYCLE
T
J
=25C
f=1.0 MH
Z
Vsig=50mVp-p
di/dt=20A/
s
di/dt=150A/
s
di/dt=100A/
s
di/dt=50A/
s
di/dt= 150A/
s
di/dt=20A/
s
di/dt=50A/
s
di/dt=100A/
s
T
J
=125C
I
F
=4.0A
V
R
=30V
t
rr
Q
rr
RESISTIVE OR INDUCTIVE LOAD
RATINGS AND CHARACTERISTIC CURVES UGB8AT THRU UGB8DT
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