Features
Silicon Stabilizer Diodes
Monolithic integrated analog circuits designed for
small power stabilizer and limitation circuits,
providing low dynamic resistance and high-quality
stabilization performance as well as low noise. In
the reverse direction, these devices show the
behavior of forward-biased silicon diodes.
The end of the ZTE device marked with the cathode
ring is to be connected: ZTE1.5 and ZTE2 to the
negative pole of the supply voltage; ZTE2.4 to the
positive pole of the supply voltage
These diodes are also available in MiniMELF
case with the type designation LL1.5 ... LL 2.4.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging codes/options:
D7/10K per 13" reel (52mm tape), 20K/box
D8/10K per Ammo tape, (52mm tape), 20K/box
DO-204AH (DO-35 Glass)
mi
n. 1.083 (
27.5)
mi
n. 1.083
(
2
7
.
5)
max
.
.
150 (
3.8)
max.
Cathode
.020 (0.52)
Mark
max.
.079 (2.0)
ZTE1.5 thru ZTE2.4
Voltage Stabilizers
Dimensions are in inches and (millimeters)
7/7/00
Operating Voltage
Dynamic resistance
Permissable operating current
at I
Z
= 5mA
(2)
at I
Z
= 5mA
at T
amb
= 25C
(1)
Type
V
Z
(V)
r
zj
(
)
I
Z
max. (mA)
ZTE1.5
1.35 ... 1.55
13(<20)
120
ZTE2
2.0 ... 2.3
18(<30)
120
ZTE2.4
2.2 ... 2.56
14(<20)
120
Notes: (1) Valid provided that electrodes are kept at ambient temperature at a distance of 8mm from case
(2) Tested with pulses t
p
= 5ms
Maximum Ratings
(T
A
= 25C unless otherwise noted)
Parameter
Symbol
Value
Unit
Operating Current (see Table "Characteristics")
Inverse Current
I
F
100
mA
Power dissipation at T
amb
= 25C
P
tot
300
(1)
mW
Junction temperature
T
J
150
C
Storage temperature range
T
S
55 to +150
C
Electrical and Thermal Characteristics
(T
A
= 25C unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage at I
F
= 10 mA
V
F
1.1
V
Temperature Coefficient of the
ZTE1.5, ZTE2
VZ
26
10
4
/C
stabilized voltage at I
Z
= 5 mA
ZTE2.4
VZ
34
10
4
/C
Thermal resistance junction to ambient air
R
JA
0.4
(1)
C/W
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