GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1214 - 55
55 Watts - 28 Volts, Pulsed
Radar 1200 - 1400 MHz
GENERAL DESCRIPTION
The 1214-55 is an internally matched, COMMON BASE transistor capable
of providing 55 Watts of pulsed RF output power at two milliseconds pulse
width, twenty percent duty factor across the band 1200 to 1400 MHz. This
hermetically solder-sealed transistor is specifically designed for L-Band radar
applications. It utilizes gold metalization and diffused emitter ballasting to
provide high reliability and supreme ruggedness.
CASE OUTLINE
55AW, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 175 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 8 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1200-1400 MHz
Vcc = 28 Volts
Pulse Width = 2 ms
Duty = 20 %
F=1300MHz, Po=55W
55
6.5
7.0
45
12.3
3:1
Watts
Watts
d B
%
BVces
BVebo
Hfe
jc
Collector to Emitter Breakdown
Emitter to Base Breakdown
DC Current Gain
Thermal Resistance
Ic =100 mA
Ie = 15 mA
Vce = 5 V,Ic = 1000 mA
Rated Pulse Condition
50
3.5
20
45
1.0
Volts
Volts
C/W
o
Issue August 1996
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