GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
2223-1.7
1.7 Watts - 24 Volts, Class C
Microwave 2200 - 2300
MHz
GENERAL DESCRIPTION
The 2223-1.7 is a COMMON BASE transistor capable of providing 1.7 Watts
of Class C, RF output power over the band 2200 - 2300 MHz. This transistor
is designed for Microwave Broadband Class C amplifier applications. It
includes input prematching and utilizes Gold metalization and diffused
ballasting to provide high reliability and supreme ruggedness. The transistor
uses a fully hermetic High Temperature Solder sealed package.
CASE OUTLINE
55LV, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 7 Watts
o
Maximum Voltage and Current
BVces Collector to Emiter Voltage 45 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current .25 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST
MIN
TYP
MAX
UNITS
CONDITIONS
Pout
Pin
Power Input
Vcc = 24 Volts
.25
Watts
Pg
c
VSWR
Power Output
F =2.2 - 2.3 GHz
1.7
Watts
Power Gain
8.3
dB
Efficiency
35
%
Load Mismatch Tolerance
10:1
BVces
BVebo
Emitter to Base Breakdown
Ie = 2 mA
3.5
Volts
Hfe
Cob
jc
Collector to Base Breakdown
Ic = 10 mA
40
Volts
Current Gain
Vce = 5 V, Ic = 160mA
10
100
Output Capacitance
Vcb = 28V, 1MHz
pF
Thermal Resistance
Tc = 25 C
24
C/W
o
o
Issue A June 1997
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