GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
23A003
0.3 Watts, 15 Volts, Class A
Linear to 2300 MHz
GENERAL DESCRIPTION
CASE OUTLINE
The23A003 is a COMMON EMITTER transistor capable of providing 0.3
Watts of Class A, RF output power to 2300 MHz. This transistor is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness. The transistor uses a fully hermetic High Temperature
Solder Sealed package.
55BT, STYLE 2
B08
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 3.0 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 0.3 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Power Input
Ic = 100 mA
0.03
Watts
Pg
Ft
VSWR
Power Out
F = 2.3 GHz
0.3
Watts
Power Gain
Vcc = 15 Volts
10.0
11.0
dB
Transition Frequency
Vce = 15V, Ic =100 mA
4.2
4.5
GHz
Load Mismatch Tolerance
10:1
BVebo
BVces
Collector to Emitter Breakdown
Ic = 20 mA
50
Volts
BVceo
h
FE
Cob
jc
Emitter to Base Breakdown
Ie = 2 mA
3.5
Volts
Collector to Emitter Breakdown
Ic = 20 mA
20
Volts
DC Current Gain
Vce = 5 V, Ic = 100 mA
20
Capacitance
Vcb = 20V, f = 1 MHz
2.5
pF
C/W
Thermal Resistance
45
o
Initial Issue November 1996
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