ChipFind - документация

Электронный компонент: GHB-3M35-UV

Скачать:  PDF   ZIP

Document Outline

REV NO: V.6 D ATE: JUN/12/2003 PAGE: 1 OF 3
T- 1 (3mm) SOLID STATE LAMP
Description
The source color devices are made with InGaN on SiC
Light Emitting Di ode.
This device radiates intense ultraviolet (UV) light when
operated .Most of the UV light emitted is not visible.
Exposure to UV radiation can be harmful to your health.
Protect your eyes and skin during operation.
Do not look directly at the device during operation.
Exposure to UV light ,even for a brief period, can damage
your eyes.
Do not operate the device unless you have had proper
safety training and take appropriate precautions.
Do not permit children or untrained personnel to operate the
device.
Static electricity and surge damage the LEDS.
It is recommended to use a wrist band or
anti-electrostatic glove when handling the LEDs.
All devices, equipment and machinery must be electrically
grounded.
55 Commerce Way
Woburn, MA 01801
(781) 935 - 4442
(781) 938 - 5867
www.gilway.com
GHB-3M35-UV
Features
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is 0.25(0.01") unless otherwise noted.
3. Lead spacing is measured where the lead emerge package.
4. Specifications are subject to change without notice.
HIGH PERFORMANCE
SUITABLE FOR AUTOMOTIVE DASHBOARD
LIGHTING, WHITE LEDS AND BACKLIGHTING
!
!
REV NO: V.6 D ATE: JUN/12/2003 PAGE: 2 OF 3
Selection Guide
Note:
1. q1/2 is the angle from optical centerline where the lumino us intensity is 1/2 the optical centerline value.
Part No.
Dice
Lens Type
Iv (mcd)
@ 20mA
Viewing
Angl e
Min.
Typ.
2q
q
q
q
1/2
ULTRAVIOLET ( InGaN )
WATER CLEAR
Electrical / Optical Characteristics at T
A
=25C
Absolute Maximum Ratings at T
A
=25C
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
Parameter
Ultraviolet
Units
Power dissipation
100
mW
DC Forward Current
30
mA
Peak Forward Current [1]
100
mA
Reverse Voltage
5
V
Operating/Storage Temperature
-40C To +85C
Lead Solder Temperature [2]
260C For 5 Seconds
Symbol
Parameter
Device
Typ.
Max.
Test Conditions
Units
l
peak
Peak Wavelength
Ultraviolet
400
nm
I
F
=20mA
l
D
Dominate Wavelength
Ultraviolet
395
nm
I
F
=20mA
Dl
1/2
Spectral Line Half-width
Ultraviolet
26
nm
I
F
=20mA
C
Capacitance
Ultraviolet
30
pF
V
F
=0V;f=1MHz
V
F
Forward Voltage
Ultraviolet
3.8
4.2
V
I
F
=20mA
I
R
Reverse Current
Ultraviolet
10
uA
V
R
= 5V
GHB-3M35-UV
50
90
34
REV NO: V.6 D ATE: JUN/12/2003 PAGE: 3 OF 3