Notes:
(1) These diodes are also avaiable in glass case DO-34
(2) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Parameters for diodes in case DO-34:
P
tot
=300mW
T
S
=-65 to +175
T
J
=175
R
tha
0.4K/mW
Features
1N914 THRU 1N4454
SILICON EPITAXIAL PLANAR DIODES
Silicon Epitaxial Planar Diodes
for general purpose and switching
The types 1N4149, 1N4447 and 1N4449 are also available
in glass case DO-34.
Electrical Characteristics
1
Type
Peak
reverse
voltage
Max.
aver.
rectified
current
Max.
power
dissip.
at 25
Max.
junction
temper-
ature
Max. forward
voltage drop
Max. reverse
current
Max. reverse recovery time
V
RM
V
I
O
mA
P
tot
mW
T
j
V
F
V
at
I
F
mA
I
n
nA atV
R
V
t
rr
nS
Conditions
1N914
100
75
500
200
1.0
10
25
20
Max. 4.0 I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
1N4149
1)
100
150
500
200
1.0
10
25
20
Max. 4.0 I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
1N4150
50
200
500
200
1.0
200
100
50
Max. 4.0 I
F
=I
R
=10 to 200 mA, to 0.1 I
F
1N4152
40
150
400
175
0.55
0.10
50
30
Max. 2.0 I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
1N4153
75
150
400
175
0.55
0.10
50
50
Max. 2.0 I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
1N4154
35
150
2)
500
200
1.0
0.10
100
25
Max. 2.0 I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
1N4447
1)
100
150
500
200
1.0
20
25
20
Max. 4.0 I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
1N4449
1)
100
150
500
200
1.0
30
25
20
Max. 4.0 I
F
=10mA, V
R
=6V, R
L
=100 , to I
R
=1mA
1N4450
40
150
400
175
0.54
0.50
50
30
Max. 4.0 I
F
=I
R
=10mA, to I
R
=1mA
1N4451
40
150
400
175
0.50
0.10
50
30
Max. 10
I
F
=I
R
=10mA, to I
R
=1mA
1N4453
30
150
400
175
0.55
0.01
50
20
-
-
1N4454
75
150
400
175
1.0
10
100
50
Max. 4.0 I
F
=I
R
=10mA, to I
R
=1mA
D IM E N S IO N S
D IM
in c h e s
m m
N o te
M in .
M a x .
M in .
M a x .
A
-
0 .1 5 4
-
3 .9
B
-
0 .0 7 5
-
1 .9
C
-
0 .0 2 0
-
0 .5 2
D
1 .0 8 3
-
2 7 .5 0
-
D IM E N S IO N S
D IM
in c h e s
m m
N o te
M in .
M a x .
M in .
M a x .
A
-
0 .1 1 4
-
2 .9
B
-
0 .0 7 5
-
1 .9
C
-
0 .0 1 7
-
0 .4 2
D
0 .6 3 0
-
1 6 .0
-
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