GSD32015
RECTIFIER DIODE
VOLTAGE UP TO
1600 V
AVERAGE CURRENT
150 A
SURGE CURRENT
2.85 kA
Cathode on base (Standard) - Anode on base (Reverse)
BLOCKING CHARACTERISTICS
Characteristic
Conditions
V
RRM
Repetitive peak reverse voltage
1600 V
V
RSM
Non-repetitive peak reverse voltage
1700 V
I
RRM
Repetitive peak reverse current, max.
V
RRM
, single phase, half wave, Tj = Tjmax
10 mA
FORWARD CHARACTERISTICS
I
F(AV)
Average forward current
Sine wave,180 conduction, Tc = 120C
150 A
I
F(RMS)
R.M.S. forward current
Sine wave,180 conduction, Tc = 120C
236 A
I
FSM
Surge forward current
Non rep. half sine wave, 50 Hz, V
R
= 0 V, T
j
= T
jmax
2.85 kA
It
I t for fusing coordination
34.0 kAs
V
F(TO)
Threshold voltage
T
j
= T
jmax
0.9 V
r
F
Forward slope resistance
T
j
= T
jmax
0.65 m
V
FM
Peak forward voltage, max
Forward current I
F
=
300 A, Tj = Tjmax
1.10 V
SWITCHING CHARACTERISTICS
t
rr
Rverse recovery time, typ
s
THERMAL AND MECHANICAL CHARACTERISTICS
R
th(j-c)
Thermal resistance (junction to case)
Double side cooled
0.35 C/W
R
th(c-h)
Thermal resistance (case to heatsink)
Double side cooled
0.08 C/W
T
jmax
Max operating junction temperature
180 C
T
stg
Storage temperature
-65 / 180 C
M
Mounting torque
10 Nm
Mass
100 g
Ordering information
cathode on stud
anode on stud
GSD32015-vv
GSDR63034-vv
vv=V
RRM
/100
example GSD32015-14
1400 V cathode on stud
Document GSD32015T002
Value
G
F
H
A
B
C
D
E
M
L
N
S y m b o l
A
B
C
D
E
F
G
H
L
M
N
Inches
0.41 1.65
0.64 0.94
0.49 0.44 1.06
1.17
0.93
m m
1 0 . 3 3
4 2 1 6 . 2 5
2 4 12.5
11.1
26.9
2 9 . 6 1 23.5
3 / 8 - 2 4 U N F 1 / 4 - 2 8 U N F
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Phone: +39-010-659 1869
Fax: +39-010-659 1870
Web: www.gpsemi.it
E-mail: info@gpsemi.it
Green Power
Semiconductors
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