GSF31012
FAST RECOVERY STUD DIODE
UL-certified insulating sleeve
VOLTAGE UP TO
1200 V
AVERAGE CURRENT
125 A
SURGE CURRENT
2.8 kA
BLOCKING CHARACTERISTICS
Characteristic
Conditions
V
RRM
Repetitive peak reverse voltage
1200 V
V
RSM
Non-repetitive peak reverse voltage
1300 V
I
RRM
Repetitive peak reverse current, max.
V
RRM
, single phase, half wave, Tj = Tjmax
35 mA
FORWARD CHARACTERISTICS
I
F(AV)
Average forward current
Sine wave,180 conduction, Th = 100 C
125 A
I
F(RMS)
R.M.S. forward current
Sine wave,180 conduction, Th = 100 C
196 A
I
FSM
Surge forward current
Non rep. half sine wave, 50 Hz, V
R
= 0 V, T
j
= T
jmax
2.8 kA
It
I t for fusing coordination
39 kAs
V
F(TO)
Threshold voltage
T
j
= T
jmax
1.2 V
r
F
Forward slope resistance
T
j
= T
jmax
2.3 m
V
FM
Peak forward voltage, max
Forward current I
F
=
450 A, Tj = 25C
2.5 V
SWITCHING CHARACTERISTICS
t
rr
Rverse recovery time, typ
T
j
= 125 C , I
F
= 350 A, di/dt = -25 A/s V
R
=30 V
1 s
THERMAL AND MECHANICAL CHARACTERISTICS
R
th(j-c)
Thermal resistance (junction to case)
Double side cooled
0.25 C/W
R
th(c-h)
Thermal resistance (case to heatsink)
Double side cooled
0.08 C/W
T
jmax
Max operating junction temperature
150 C
T
stg
Storage temperature
-40 / 150 C
M
Mounting torque
10 Nm
Mass
100 g
Ordering information
cathode on stud
anode on stud
GSF31012-vvtt
GSFR31012-vvtt
vv=V
RRM
/100
tt= trr [s] * 10
example
GSF31012-1210
1200 V
1 s @ 25C
Document GSF31012T001
Value
dimensions in inch
3/8 " - 24 UNF THD
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Via Greto di Cornigliano 6R - 16152 Genova , Italy
Phone: +39-010-659 1869
Fax: +39-010-659 1870
Web: www.gpsemi.it
E-mail: info@gpsemi.it
Green Power
Semiconductors
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