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Электронный компонент: GS72108AGP-12I

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GS72108ATP/J
256K x 8
2Mb Asynchronous SRAM
7, 8, 10, 12 ns
3.3 V V
DD
Center V
DD
and V
SS
SOJ, TSOP
Commercial Temp
Industrial Temp
Rev: 1.05 10/2004
1/12
2001, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Features
Fast access time: 7, 8, 10, 12 ns
CMOS low power operation: 135/115/95/80 mA at minimum
cycle time
Single 3.3 V power supply
All inputs and outputs are TTL-compatible
Fully static operation
Industrial Temperature Option: 40 to 85C
Package line up
J: 400 mil, 36-pin SOJ package
TP: 400 mil, 44-pin TSOP Type II package
GP:Pb-free 400 mil, 44-pin TSOP Type II package
Pb-Free TSOP-II package available
Description
The GS72108A is a high speed CMOS Static RAM organized
as 262,144 words by 8 bits. Static design eliminates the need
for external clocks or timing strobes. The GS operates on a
single 3.3 V power supply and all inputs and outputs are TTL-
compatible. The GS72108A is available in 400 mil SOJ and
400 mil TSOP Type-II packages.
SOJ 256K x 8-Pin Configuration
Package J
Pin Descriptions
Symbol
Description
A
0
A
17
Address input
DQ
1
DQ
8
Data input/output
CE
Chip enable input
WE
Write enable input
OE
Output enable input
V
DD
+3.3 V power supply
V
SS
Ground
NC
No connect
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A
4
A
3
A
2
A
1
A
0
CE
DQ
1
DQ
2
V
DD
V
SS
DQ
3
DQ
4
WE
A
17
A
16
A
15
NC
A
5
A
6
A
7
A
8
OE
DQ
8
DQ
7
V
SS
V
DD
DQ
6
DQ
5
A
9
A
10
A
11
A
12
36-pin
400 mil SOJ
17
18
A
14
A
13
20
19
NC
NC
GS72108ATP/J
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.05 10/2004
2/12
2001, GSI Technology
TSOP-II 256K x 8-Pin Configuration
Package TP
Block Diagram
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
A
4
A
3
A
2
A
1
A
0
CE
DQ
1
DQ
2
V
DD
V
SS
DQ
3
DQ
4
WE
NC
A
5
A
6
A
7
A
8
OE
DQ
8
DQ
7
V
SS
V
DD
DQ
6
DQ
5
A
10
A
11
A
12
NC
44-pin
400 mil TSOP II
19
20
26
25
NC
21
22
NC
NC
24
23
NC
NC
1
2
NC
NC
44
43
NC
NC
A
9
A
13
A
17
A
16
A
15
A
14
Memory Array
Row
Decoder
Column
Decoder
Address
Input
Buffer
Control
I/O Buffer
A
0
CE
WE
OE
DQ
1
A
17
DQ
8
GS72108ATP/J
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.05 10/2004
3/12
2001, GSI Technology
Note:
X: "H" or "L"
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Truth Table
CE
OE
WE
DQ
1
to DQ
8
V
DD
Current
H
X
X
Not Selected
ISB
1
, ISB
2
L
L
H
Read
I
DD
L
X
L
Write
L
H
H
High Z
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
V
DD
0.5 to +4.6
V
Input Voltage
V
IN
0.5 to V
DD
+0.5
(
4.6 V max.)
V
Output Voltage
V
OUT
0.5 to V
DD
+0.5
(
4.6 V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
T
STG
55 to 150
o
C
GS72108ATP/J
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.05 10/2004
4/12
2001, GSI Technology
Notes:
1. Input overshoot voltage should be less than V
DD
+2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than 2 V and not exceed 20 ns.
Notes:
1. Tested at T
A
= 25C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -7/-8/-10/-12
V
DD
3.0
3.3
3.6
V
Input High Voltage
V
IH
2.0
--
V
DD
+0.3
V
Input Low Voltage
V
IL
0.3
--
0.8
V
Ambient Temperature,
Commercial Range
T
Ac
0
--
70
o
C
Ambient Temperature,
Industrial Range
T
A
I
40
--
85
o
C
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
C
IN
V
IN
= 0 V
5
pF
Output Capacitance
C
OUT
V
OUT
= 0 V
7
pF
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage
Current
I
IL
V
IN
= 0 to V
DD
1 uA
1 uA
Output Leakage
Current
I
LO
Output High Z
V
OUT
= 0 to V
DD
1 uA
1 uA
Output High Voltage
V
OH
I
OH
= 4mA
2.4
--
Output Low Voltage
V
OL
I
LO
= +4mA
--
0.4 V
GS72108ATP/J
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.05 10/2004
5/12
2001, GSI Technology
AC Test Conditions
Power Supply Currents
Parameter Symbol
Test Conditions
0 to 70C
40 to 85C
7 ns
8 ns
10 ns 12 ns
7 ns
8 ns
10 ns
12 ns
Operating
Supply
Current
I
DD
(max)
CE
V
IL
All other inputs
V
IH
or
V
IL
Min. cycle time
I
OUT
= 0 mA
135 mA 115 mA
95 mA
80 mA
140 mA
120 mA
100 mA
85 mA
Standby
Current
I
SB1
(max)
CE
V
IH
All other inputs
V
IH
or
V
IL
Min. cycle time
25 mA
20 mA
20 mA
15 mA
30 mA
25 mA
25 mA
20 mA
Standby
Current
I
SB2
(max)
CE
V
DD
- 0.2 V
All other inputs
V
DD
0.2 V or
0.2 V
5 mA
10 mA
DQ
VT = 1.4 V
50
30pF
1
DQ
3.3 V
Output Load 1
Output Load 2
589
434
5pF
1
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Output load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
Parameter
Conditions
Input high level
V
IH
= 2.4 V
Input low level
V
IL
= 0.4 V
Input rise time
tr = 1 V/ns
Input fall time
tf = 1 V/ns
Input reference level
1.4 V
Output reference level
1.4 V
Output load
Fig. 1& 2