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Электронный компонент: GS73024A

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Rev: 1.01 6/2003
1/12
2003, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS73024AB
128K x 24
3Mb Asynchronous SRAM
8, 10, 12 ns
3.3 V V
DD
BGA
Commercial Temp
Industrial Temp
Features
Fast access time: 8, 10, 12 ns
CMOS low power operation: 250/200/170 mA at minimum
cycle time
Single 3.3 V 0.3V power supply
All inputs and outputs are TTL-compatible
Fully static operation
Industrial Temperature Option: 40 to 85C
Package
B: 14 mm x 22 mm, 119-bump, 1.27mm pitch BGA
Description
The GS73024A is a high speed CMOS Static RAM organized
as 131,072 words by 24 bits. Static design eliminates the need
for external clocks or timing strobes. Operating on a single
3.3 V power supply, and all inputs and outputs are
TTL-compatible. The GS73024A is available in a 119-bump
BGA package.
119-Bump Ball Grid Array Package
Pin Descriptions
Symbol
Description
Symbol
Description
A
0
to A
16
Address input
DQ
1
to DQ
24
Data input/output
WE
Write enable input
OE
Output enable input
CE
Chip enable input
V
SS
Ground
V
DD
+3.3 V power supply
CE3
CE2
WE
OE
Memory Array
Row
Decoder
Column
Decoder
Address
Input
Control
I/O Buffer
A
0
DQ
1
DQ
24
Block Diagram
A
16
CE1
Rev: 1.01 6/2003
2/12
2003, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS73024AB
119-Bump, 1.27 mm Pitch BGA Pad Out
Top View
1
2
3
4
5
6
7
A
NC
A
3
A
2
A
16
A
1
A
0
NC
B
NC
A
7
A
6
CE
A
5
A
4
NC
C
DQ
13
NC
NC
NC
NC
NC
DQ
12
D
DQ
14
V
DD
V
SS
V
SS
V
SS
V
DD
DQ
11
E
DQ
15
NC
V
DD
V
SS
V
DD
NC
DQ
10
F
DQ
16
V
DD
V
SS
V
SS
V
SS
V
DD
DQ
9
G
DQ
17
NC
V
DD
V
SS
V
DD
NC
DQ
8
H
DQ
18
V
DD
V
SS
V
SS
V
SS
V
DD
DQ
7
J
V
DD
V
SS
V
DD
V
SS
V
DD
V
SS
V
DD
K
DQ
19
V
DD
V
SS
V
SS
V
SS
V
DD
DQ
6
L
DQ
20
NC
V
DD
V
SS
V
DD
NC
DQ
5
M
DQ
21
V
DD
V
SS
V
SS
V
SS
V
DD
DQ
4
N
DQ
22
NC
V
DD
V
SS
V
DD
NC
DQ
3
P
DQ
23
V
DD
V
SS
V
SS
V
SS
V
DD
DQ
2
R
DQ
24
NC
NC
NC
NC
NC
DQ
1
T
NC
A
11
A
10
WE
A
9
A
8
NC
U
NC
A
15
A
14
OE
A
13
A
12
NC
Rev: 1.01 6/2003
3/12
2003, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS73024AB
X: "H" or "L"
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to
Recommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect
device reliability.
Truth Table
CE
OE
WE
Mode
DQ0 to DQ23
V
DD
Current
H
X
X
Not selected
High Z
ISB1, ISB2
L
L
H
Read
Data Out
I
DD
L
X
L
Write
Data In
L
H
H
Output disable
High Z
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
V
DD
0.5 to +4.6
V
Input Voltage
V
IN
0.5 to V
DD
+0.5
(
4.6 V max.)
V
Output Voltage
V
OUT
0.5 to V
DD
+0.5
(
4.6 V max.)
V
Allowable BGA power dissipation
PD
1.5
W
Storage temperature
T
STG
55 to 150
o
C
Rev: 1.01 6/2003
4/12
2003, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS73024AB
Notes:
1. Input overshoot voltage should be less than V
DD
+2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than 2 V and not exceed 20 ns.
Notes:
1. Tested at T
A
= 25C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -10/12
V
DD
3.0
3.3
3.6
V
Supply Voltage for -8
V
DD
3.135
3.3
3.6
V
Input High Voltage
V
IH
2.0
--
V
DD
+0.3
V
Input Low Voltage
V
IL
0.3
--
0.8
V
Ambient Temperature,
Commercial Range
T
Ac
0
--
70
o
C
Ambient Temperature,
Industrial Range
T
Ai
40
--
85
o
C
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
C
IN
V
IN
= 0 V
5
pF
I/O Capacitance
C
OUT
V
OUT
= 0 V
7
pF
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage Current
I
IL
V
IN
= 0 to V
DD
1 uA
1 uA
Output Leakage Current
I
OL
Output High Z,
V
OUT
= 0 to V
DD
1 uA
1 uA
Output High Voltage
V
OH
I
OH
= 4 mA
2.4
--
Output Low Voltage
V
OL
I
OL
= +4 mA
--
0.4 V
Rev: 1.01 6/2003
5/12
2003, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS73024AB
AC Test Conditions
Power Supply Currents
Parameter
Symbol
Test Conditions
0 to 70C
40 to 85C
8 ns
10 ns
12 ns
8 ns
10 ns
12 ns
Operating
Supply
Current
I
DD
CE
V
IL
All other inputs
V
IH
or
V
IL
Min. cycle time
I
OUT
= 0 mA
250 mA
200 mA
170 mA
260 mA
210 mA
180 mA
Standby
Current
I
SB1
CE
V
IH
All other inputs
V
IH
or
V
IL
Min. cycle time
40 mA
40 mA
30 mA
50 mA
50 mA
40 mA
Standby
Current
I
SB2
CE
V
DD
- 0.2V
All other inputs
V
DD
- 0.2V or
0.2V
10 mA
20 mA
DQ
VT = 1.4 V
50
30pF
1
DQ
3.3 V
Output Load 1
Output Load 2
589
434
5pF
1
Notes:
1. Includes scope and jig capacitance
2. Test conditions as specified with output loading as shown in
Fig. 1 unless otherwise noted
3. Output load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
Parameter
Conditions
Input high level
V
IH
= 2.4 V
Input low level
V
IL
= 0.4 V
Input rise time
t = 1 V/ns
Input fall time
tf = 1 V/ns
Input reference level
1.4 V
Output reference level
1.4 V
Output load
Fig. 1& 2