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Электронный компонент: GS74108J-12I

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Rev: 1.06 7/2000
1/12
1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74108TP/J
512K x 8
4Mb Asynchronous SRAM
8, 10, 12, 15ns
3.3V V
DD
Center V
DD
& V
SS
SOJ, TSOP
Commercial Temp
Industrial Temp
Features
Fast access time: 8, 10, 12, 15ns
CMOS low power operation: 150/125/110/90 mA at min. cycle time.
Single 3.3V 0.3V power supply
All inputs and outputs are TTL compatible
Fully static operation
Industrial Temperature Option: -40 to 85C
Package line up
J: 400mil, 36 pin SOJ package
TP: 400mil, 44 pin TSOP Type II package
Description
The GS74108 is a high speed CMOS static RAM organized as
524,288-words by 8-bits. Static design eliminates the need for exter-
nal clocks or timing strobes. Operating on a single 3.3V power supply
and all inputs and outputs are TTL compatible. The GS74108 is avail-
able in 400 mil SOJ and 400 mil TSOP Type-II packages.
Pin Descriptions
SOJ 512K x 8 Pin Configuration
Symbol
Description
A
0
to A
18
Address input
DQ
1
to DQ
8
Data input/output
CE
Chip enable input
WE
Write enable input
OE
Output enable input
V
DD
+3.3V power supply
V
SS
Ground
NC
No connect
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A
4
A
3
A
2
A
1
A
0
CE
DQ
1
DQ
2
V
DD
V
SS
DQ
3
DQ
4
WE
A
17
A
16
A
15
NC
A
5
A
6
A
7
A
8
OE
DQ
8
DQ
7
V
SS
V
DD
DQ
6
DQ
5
A
9
A
10
A
11
A
12
36 pin
400mil SOJ
17
18
A
14
A
13
20
19
NC
A
18
Rev: 1.06 7/2000
2/12
1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74108TP/J
TSOP-II 512K x 8 Pin Configuration
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
A
4
A
3
A
2
A
1
A
0
CE
DQ
1
DQ
2
V
DD
V
SS
DQ
3
DQ
4
WE
NC
A
5
A
6
A
7
A
8
OE
DQ
8
DQ
7
V
SS
V
DD
DQ
6
DQ
5
A
10
A
11
A
12
A
18
44 pin
400mil TSOP II
19
20
26
25
NC
21
22
NC
NC
24
23
NC
NC
1
2
NC
NC
44
43
NC
NC
A
9
A
13
A
17
A
16
A
15
A
14
Memory Array
Row
Decoder
Column
Decoder
Address
Input
Buffer
Control
I/O Buffer
A
0
CE
WE
OE
DQ
1
A
18
Block Diagram
DQ
8
Rev: 1.06 7/2000
3/12
1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74108TP/J
Note: X: "H" or "L"
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Truth Table
CE
OE
WE
DQ
1
to DQ
8
V
DD
Current
H
X
X
Not Selected
ISB
1
, ISB
2
L
L
H
Read
I
DD
L
X
L
Write
L
H
H
High Z
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
V
DD
-0.5 to +4.6
V
Input Voltage
V
IN
-0.5 to V
DD
+0.5
(
4.6V max.)
V
Output Voltage
V
OUT
-0.5 to V
DD
+0.5
(
4.6V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
T
STG
-55 to 150
o
C
Rev: 1.06 7/2000
4/12
1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74108TP/J
Note:
1. Input overshoot voltage should be less than V
DD
+2V and not exceed 20ns.
2. Input undershoot voltage should be greater than -2V and not exceed 20ns.
Notes:
1. Tested at T
A
=25C, f=1MHz
2. These parameters are sampled and are not 100% tested
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -10/12/15
V
DD
3.0
3.3
3.6
V
Supply Voltage for -8
V
DD
3.135
3.3
3.6
V
Input High Voltage
V
IH
2.0
-
V
DD
+0.3
V
Input Low Voltage
V
IL
-0.3
-
0.8
V
Ambient Temperature,
Commercial Range
T
Ac
0
-
70
o
C
Ambient Temperature,
Industrial Range
T
A
I
-40
-
85
o
C
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
C
IN
V
IN
=0V
5
pF
Output Capacitance
C
OUT
V
OUT
=0V
7
pF
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage
Current
I
IL
V
IN
= 0 to V
DD
-1uA
1uA
Output Leakage
Current
I
LO
Output High Z
V
OUT
= 0 to V
DD
-1uA
1uA
Output High Voltage
V
OH
I
OH
= - 4mA
2.4
Output Low Voltage
V
OL
I
LO
= + 4mA
0.4V
Rev: 1.06 7/2000
5/12
1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74108TP/J
AC Test Conditions
Power Supply Currents
Parameter
Symbol
Test Conditions
0 to 70C
-40 to 85C
8ns
10ns
12ns
15ns
10ns
12ns
15ns
Operating
Supply
Current
I
DD
CE
V
IL
All other inputs
V
IH
or
V
IL
Min. cycle time
I
OUT
= 0 mA
150mA 125mA 110mA
90mA
135mA 120mA 100mA
Standby
Current
I
SB1
CE
V
IH
All other inputs
V
IH
or
V
IL
Min. cycle time
70mA
65mA
60mA
55mA
75mA
70mA
65mA
Standby
Current
I
SB2
CE
V
DD
- 0.2V
All other inputs
V
DD
- 0.2V or
0.2V
30mA
40mA
DQ
VT=1.4V
50
30pF
1
DQ
3.3V
Output Load 1
Output Load 2
589
434
5pF
1
Note:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted
3. Output load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
.
Parameter
Conditions
Input high level
V
IH
=2.4V
Input low level
V
IL
=0.4V
Input rise time
tr=1V/ns
Input fall time
tf=1V/ns
Input reference level
1.4V
Output reference level
1.4V
Output load
Fig. 1& 2