Rev: 2.13 9/2002
1/28
1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816018/32/36T-250/225/200/166/150/133
1M x 18, 512K x 32, 512K x 36
18Mb Sync Burst SRAMs
250 MHz133 MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
FT pin for user-configurable flow through or pipeline
operation
Single Cycle Deselect (SCD) operation
2.5 V or 3.3 V +10%/10% core power supply
2.5 V or 3.3 V I/O supply
LBO pin for Linear or Interleaved Burst mode
Internal input resistors on mode pins allow floating mode pins
Default to Interleaved Pipeline mode
Byte Write (BW) and/or Global Write (GW) operation
Internal self-timed write cycle
Automatic power-down for portable applications
JEDEC-standard 100-lead TQFP package
Functional Description
Applications
The GS816018/32/36T is an 18,874,368-bit (16,777,216-bit
for x32 version) high performance synchronous SRAM with a
2-bit burst address counter. Although of a type originally
developed for Level 2 Cache applications supporting high
performance CPUs, the device now finds application in
synchronous SRAM applications, ranging from DSP main
store to networking chip set support.
Controls
Addresses, data I/Os, chip enables (E1, E2, E3), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by
the user via the FT mode pin (Pin 14). Holding the FT mode pin
low places the RAM in Flow Through mode, causing output
data to bypass the Data Output Register. Holding FT high
places the RAM in Pipeline mode, activating the rising-edge-
triggered Data Output Register.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS816018/32/36T operates on a 2.5 V or 3.3 V power
supply. All input are 3.3 V and 2.5 V compatible. Separate
output power (V
DDQ
) pins are used to decouple output noise
from the internal circuits and are 3.3 V and 2.5 V compatible.
-250 -225 -200 -166 -150 -133 Unit
Pipeline
3-1-1-1
t
KQ
tCycle
2.5
4.0
2.7
4.4
3.0
5.0
3.4
6.0
3.8
6.7
4.0
7.5
ns
ns
3.3 V
Curr
(x18)
Curr
(x32/x36)
280
330
255
300
230
270
200
230
185
215
165
190
mA
mA
2.5 V
Curr
(x18)
Curr
(x32/x36)
275
320
250
295
230
265
195
225
180
210
165
185
mA
mA
Flow
Through
2-1-1-1
t
KQ
tCycle
5.5
5.5
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.5
8.5
ns
ns
3.3 V
Curr
(x18)
Curr
(x32/x36)
175
200
165
190
160
180
150
170
145
165
135
150
mA
mA
2.5 V
Curr
(x18)
Curr
(x32/x36)
175
200
165
190
160
180
150
170
145
165
135
150
mA
mA
Rev: 2.13 9/2002
2/28
1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816018/32/36T-250/225/200/166/150/133
GS816018 100-Pin TQFP Pinout
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
V
DDQ
V
SS
DQ
B1
DQ
B2
V
SS
V
DDQ
DQ
B3
DQ
B4
V
DD
NC
V
SS
DQ
B5
DQ
B6
V
DDQ
V
SS
DQ
B7
DQ
B8
DQ
B9
V
SS
V
DDQ
V
DDQ
V
SS
DQ
A8
DQ
A7
V
SS
V
DDQ
DQ
A6
DQ
A5
V
SS
NC
V
DD
ZZ
DQ
A4
DQ
A3
V
DDQ
V
SS
DQ
A2
DQ
A1
V
SS
V
DDQ
LBO
A
5
A
4
A
3
A
2
A
1
A
0
NC
NC
V
SS
V
DD
A
18
A
17
A
10
A
11
A
12
A
13
A
14
A
16
A
6
A
7
E
1
E
2
NC
NC
B
B
B
A
E
3
CK
GW
BW
V
DD
V
SS
G
ADSC
ADSP
ADV
A
8
A
9
A
15
1M x 18
Top View
DQ
A9
A
19
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
FT
Rev: 2.13 9/2002
3/28
1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816018/32/36T-250/225/200/166/150/133
GS816032 100-Pin TQFP Pinout
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
V
DDQ
V
SS
DQ
C4
DQ
C3
V
SS
V
DDQ
DQ
C2
DQ
C1
V
DD
NC
V
SS
DQ
D1
DQ
D2
V
DDQ
V
SS
DQ
D3
DQ
D4
DQ
D5
V
SS
V
DDQ
V
DDQ
V
SS
DQ
B4
DQ
B3
V
SS
V
DDQ
DQ
B2
DQ
B1
V
SS
NC
V
DD
ZZ
DQ
A1
DQ
A2
V
DDQ
V
SS
DQ
A3
DQ
A4
V
SS
V
DDQ
LBO
A
5
A
4
A
3
A
2
A
1
A
0
NC
NC
V
SS
V
DD
A
18
A
17
A
10
A
11
A
12
A
13
A
14
A
16
A
6
A
7
E
1
E
2
B
D
B
C
B
B
B
A
E
3
CK
GW
BW
V
DD
V
SS
G
ADSC
ADSP
ADV
A
8
A
9
A
15
512K x 32
Top View
DQ
B5
NC
DQ
B7
DQ
B8
DQ
B6
DQ
A6
DQ
A5
DQ
A8
DQ
A7
NC
DQ
C7
DQ
C8
DQ
C6
DQ
D6
DQ
D8
DQ
D7
NC
DQ
C5
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
FT
Rev: 2.13 9/2002
4/28
1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816018/32/36T-250/225/200/166/150/133
GS816036 100-Pin TQFP Pinout
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
V
DDQ
V
SS
DQ
C4
DQ
C3
V
SS
V
DDQ
DQ
C2
DQ
C1
V
DD
NC
V
SS
DQ
D1
DQ
D2
V
DDQ
V
SS
DQ
D3
DQ
D4
DQ
D5
V
SS
V
DDQ
V
DDQ
V
SS
DQ
B4
DQ
B3
V
SS
V
DDQ
DQ
B2
DQ
B1
V
SS
NC
V
DD
ZZ
DQ
A1
DQ
A2
V
DDQ
V
SS
DQ
A3
DQ
A4
V
SS
V
DDQ
LBO
A
5
A
4
A
3
A
2
A
1
A
0
NC
NC
V
SS
V
DD
A
18
A
17
A
10
A
11
A
12
A
13
A
14
A
16
A
6
A
7
E
1
E
2
B
D
B
C
B
B
B
A
E
3
CK
GW
BW
V
DD
V
SS
G
ADSC
ADSP
ADV
A
8
A
9
A
15
512K x 36
Top View
DQ
B5
DQ
B9
DQ
B7
DQ
B8
DQ
B6
DQ
A6
DQ
A5
DQ
A8
DQ
A7
DQ
A9
DQ
C7
DQ
C8
DQ
C6
DQ
D6
DQ
D8
DQ
D7
DQ
D9
DQ
C5
DQ
C9
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
FT
Rev: 2.13 9/2002
5/28
1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS816018/32/36T-250/225/200/166/150/133
TQFP Pin Description
Symbol
Type
Description
A
0
, A
1
I
Address field LSBs and Address Counter preset Inputs
A
2
A
18
I
Address Inputs
A
19
I
Address Input
DQ
A1
DQ
A9
DQ
B1
DQ
B9
DQ
C1
DQ
C9
DQ
D1
DQ
D9
I/O
Data Input and Output pins
NC
No Connect
BW
I
Byte Write--Writes all enabled bytes; active low
B
A
, B
B,
B
C
, B
D
I
Byte Write Enable for DQ
A
, DQ
B
Data I/Os; active low
CK
I
Clock Input Signal; active high
GW
I
Global Write Enable--Writes all bytes; active low
E
1
, E
3
I
Chip Enable; active low
E
2
I
Chip Enable; active high
G
I
Output Enable; active low
ADV
I
Burst address counter advance enable; active low
ADSP, ADSC
I
Address Strobe (Processor, Cache Controller); active low
ZZ
I
Sleep Mode control; active high
FT
I
Flow Through or Pipeline mode; active low
LBO
I
Linear Burst Order mode; active low
V
DD
I
Core power supply
V
SS
I
I/O and Core Ground
V
DDQ
I
Output driver power supply
NC
--
No Connect
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