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Электронный компонент: GS832272C-225I

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Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
2M x 18, 1M x 36, 512K x 72
36Mb S/DCD Sync Burst SRAMs
250 MHz133 MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
119-, 165-, & 209-Pin BGA
Commercial Temp
Industrial Temp
Rev: 1.06 9/2004
1/41
2001, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Features
FT pin for user-configurable flow through or pipeline operation
Single/Dual Cycle Deselect selectable
IEEE 1149.1 JTAG-compatible Boundary Scan
ZQ mode pin for user-selectable high/low output drive
2.5 V +10%/10% core power supply
3.3 V +10%/10% core power supply
2.5 V or 3.3 V I/O supply
LBO pin for Linear or Interleaved Burst mode
Internal input resistors on mode pins allow floating mode pins
Default to SCD x18/x36 Interleaved Pipeline mode
Byte Write (BW) and/or Global Write (GW) operation
Internal self-timed write cycle
Automatic power-down for portable applications
JEDEC-standard 119-, 165-, and 209-bump BGA package
Functional Description
Applications
The GS832218/36/72 is a
37,748,736-bit high performance
synchronous SRAM with a 2-bit burst address counter. Although
of a type originally developed for Level 2 Cache applications
supporting high performance CPUs, the device now finds
application in synchronous SRAM applications, ranging from
DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enable (E1), address burst control
inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW,
GW) are synchronous and are controlled by a positive-edge-
triggered clock input (CK). Output enable (G) and power down
control (ZZ) are asynchronous inputs. Burst cycles can be initiated
with either ADSP or ADSC inputs. In Burst mode, subsequent
burst addresses are generated internally and are controlled by
ADV. The burst address counter may be configured to count in
either linear or interleave order with the Linear Burst Order (LBO)
input. The Burst function need not be used. New addresses can be
loaded on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by the
user via the FT mode . Holding the FT mode pin low places the
RAM in Flow Through mode, causing output data to bypass the
Data Output Register. Holding FT high places the RAM in
Pipeline mode, activating the rising-edge-triggered Data Output
Register.
SCD and DCD Pipelined Reads
The GS832218/36/72 is a SCD (Single Cycle Deselect) and DCD
(Dual Cycle Deselect) pipelined synchronous SRAM. DCD
SRAMs pipeline disable commands to the same degree as read
commands. SCD SRAMs pipeline deselect commands one stage
less than read commands. SCD RAMs begin turning off their
outputs immediately after the deselect command has been
captured in the input registers. DCD RAMs hold the deselect
command for one full cycle and then begin turning off their
outputs just after the second rising edge of clock. The user may
configure this SRAM for either mode of operation using the SCD
mode input.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write control
inputs.
FLXDriveTM
The ZQ pin allows selection between high drive strength (ZQ low)
for multi-drop bus applications and normal drive strength (ZQ
floating or high) point-to-point applications. See the Output Driver
Characteristics chart for details.
Core and Interface Voltages
The GS832218/36/72 operates on a 2.5 V or 3.3 V power supply.
All input are 3.3 V and 2.5 V compatible. Separate output power
(V
DDQ
) pins are used to decouple output noise from the internal
circuits and are 3.3 V and 2.5 V compatible.
Parameter Synopsis
-250 -225 -200 -166 -150 -133 Unit
Pipeline
3-1-1-1
t
KQ
(x18/x36)
t
KQ
(x72)
tCycle
2.5
3.0
4.0
2.7
3.0
4.4
3.0
3.0
5.0
3.5
3.5
6.0
3.8
3.8
6.7
4.0
4.0
7.5
ns
ns
ns
Curr (x18)
Curr (x36)
Curr (x72)
285
350
440
265
320
410
245
295
370
220
260
320
210
240
300
185
215
265
mA
mA
mA
Flow
Through
2-1-1-1
t
KQ
tCycle
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
8.5
8.5
ns
ns
Curr (x18)
Curr (x36)
Curr (x72)
205
235
315
195
225
295
185
210
265
175
200
255
165
190
240
155
175
230
mA
mA
mA
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
2/41
2001, GSI Technology
209-Bump BGA--x72 Common I/O--Top View (Package C)
1
2
3
4
5
6
7
8
9
10
11
A
DQ
G
DQ
G
A
E2
ADSP
ADSC
ADV
E3
A
DQ
B
DQ
B
A
B
DQ
G
DQ
G
BC
BG
NC
BW
A
BB
BF
DQ
B
DQ
B
B
C
DQ
G
DQ
G
BH
BD
NC
E1
NC
BE
BA
DQ
B
DQ
B
C
D
DQ
G
DQ
G
V
SS
NC
NC
G
GW
NC
V
SS
DQ
B
DQ
B
D
E
DQP
G
DQP
C
V
DDQ
V
DDQ
V
DD
V
DD
V
DD
V
DDQ
V
DDQ
DQP
F
DQP
B
E
F
DQ
C
DQ
C
V
SS
V
SS
V
SS
ZQ
V
SS
V
SS
V
SS
DQ
F
DQ
F
F
G
DQ
C
DQ
C
V
DDQ
V
DDQ
V
DD
MCH
V
DD
V
DDQ
V
DDQ
DQ
F
DQ
F
G
H
DQ
C
DQ
C
V
SS
V
SS
V
SS
MCL
V
SS
V
SS
V
SS
DQ
F
DQ
F
H
J
DQ
C
DQ
C
V
DDQ
V
DDQ
V
DD
MCL
V
DD
V
DDQ
V
DDQ
DQ
F
DQ
F
J
K
NC
NC
CK
NC
V
SS
MCL
V
SS
NC
NC
NC
NC
K
L
DQ
H
DQ
H
V
DDQ
V
DDQ
V
DD
FT
V
DD
V
DDQ
V
DDQ
DQ
A
DQ
A
L
M
DQ
H
DQ
H
V
SS
V
SS
V
SS
MCL
V
SS
V
SS
V
SS
DQ
A
DQ
A
M
N
DQ
H
DQ
H
V
DDQ
V
DDQ
V
DD
SCD
V
DD
V
DDQ
V
DDQ
DQ
A
DQ
A
N
P
DQ
H
DQ
H
V
SS
V
SS
V
SS
ZZ
V
SS
V
SS
V
SS
DQ
A
DQ
A
P
R
DQP
D
DQP
H
V
DDQ
V
DDQ
V
DD
V
DD
V
DD
V
DDQ
V
DDQ
DQP
A
DQP
E
R
T
DQ
D
DQ
D
V
SS
NC
NC
LBO
NC
NC
V
SS
DQ
E
DQ
E
T
U
DQ
D
DQ
D
NC
A
A
A
A
A
A
DQ
E
DQ
E
U
V
DQ
D
DQ
D
A
A
A
A1
A
A
A
DQ
E
DQ
E
V
W
DQ
D
DQ
D
TMS
TDI
A
A0
A
TDO
TCK
DQ
E
DQ
E
W
11 x 19 Bump BGA--14 x 22 mm
2
Body--1 mm Bump Pitch
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
3/41
2001, GSI Technology
GS832272 209-Bump BGA Pin Description
Symbol
Type
Description
A
0
, A
1
I
Address field LSBs and Address Counter Preset Inputs.
An
I
Address Inputs
DQ
A
DQ
B
DQ
C
DQ
D
DQ
E
DQ
F
DQ
G
DQ
H
I/O
Data Input and Output pins
B
A
, B
B
I
Byte Write Enable for DQ
A
, DQ
B
I/Os; active low
B
C
,B
D
I
Byte Write Enable for DQ
C
, DQ
D
I/Os; active low
B
E
, B
F
, B
G
,B
H
I
Byte Write Enable for DQ
E
, DQ
F
, DQ
G
, DQ
H
I/Os; active low
NC
--
No Connect
CK
I
Clock Input Signal; active high
GW
I
Global Write Enable--Writes all bytes; active low
E
1
I
Chip Enable; active low
E
3
I
Chip Enable; active low
E
2
I
Chip Enable; active high
G
I
Output Enable; active low
ADV
I
Burst address counter advance enable; active low
ADSP, ADSC
I
Address Strobe (Processor, Cache Controller); active low
ZZ
I
Sleep Mode control; active high
FT
I
Flow Through or Pipeline mode; active low
LBO
I
Linear Burst Order mode; active low
SCD
I
Single Cycle Deselect/Dual Cycle Deselect Mode Control
MCH
I
Must Connect High
MCL
Must Connect Low
BW
I
Byte Enable; active low
ZQ
I
FLXDrive Output Impedance Control
(Low = Low Impedance [High Drive], High = High Impedance [Low Drive])
TMS
I
Scan Test Mode Select
TDI
I
Scan Test Data In
TDO
O
Scan Test Data Out
TCK
I
Scan Test Clock
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
4/41
2001, GSI Technology
V
DD
I
Core power supply
V
SS
I
I/O and Core Ground
V
DDQ
I
Output driver power supply
GS832272 209-Bump BGA Pin Description (Continued)
Symbol
Type
Description
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
5/41
2001, GSI Technology
165-Bump BGA--x18 Commom I/O--Top View (Package E)
1
2
3
4
5
6
7
8
9
10
11
A
NC
A
E1
BB
NC
E3
BW
ADSC
ADV
A
A
A
B
NC
A
E2
NC
BA
CK
GW
G
ADSP
A
NC
B
C
NC
NC
V
DDQ
V
SS
V
SS
V
SS
V
SS
V
SS
V
DDQ
NC
DQPA
C
D
NC
DQB
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
NC
DQA
D
E
NC
DQB
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
NC
DQA
E
F
NC
DQB
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
NC
DQA
F
G
NC
DQB
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
NC
DQA
G
H
FT
MCL
NC
V
DD
V
SS
V
SS
V
SS
V
DD
NC
ZQ
ZZ
H
J
DQB
NC
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
DQA
NC
J
K
DQB
NC
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
DQA
NC
K
L
DQB
NC
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
DQA
NC
L
M
DQB
NC
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
DQA
NC
M
N
DQPB
SCD
V
DDQ
V
SS
NC
A
NC
V
SS
V
DDQ
NC
NC
N
P
NC
NC
A
A
TDI
A1
TDO
A
A
A
A
P
R
LBO
A
A
A
TMS
A0
TCK
A
A
A
A
R
11 x 15 Bump BGA--15 mm x 17 mm Body--1.0 mm Bump Pitch
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
6/41
2001, GSI Technology
165-Bump BGA--x36 Common I/O--Top View (Package E)
1
2
3
4
5
6
7
8
9
10
11
A
NC
A
E1
BC
BB
E3
BW
ADSC
ADV
A
NC
A
B
NC
A
E2
BD
BA
CK
GW
G
ADSP
A
NC
B
C
DQPC
NC
V
DDQ
V
SS
V
SS
V
SS
V
SS
V
SS
V
DDQ
NC
DQPB
C
D
DQC
DQC
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
DQB
DQB
D
E
DQC
DQC
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
DQB
DQB
E
F
DQC
DQC
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
DQB
DQB
F
G
DQC
DQC
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
DQB
DQB
G
H
FT
MCL
NC
V
DD
V
SS
V
SS
V
SS
V
DD
NC
ZQ
ZZ
H
J
DQD
DQD
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
DQA
DQA
J
K
DQD
DQD
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
DQA
DQA
K
L
DQD
DQD
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
DQA
DQA
L
M
DQD
DQD
V
DDQ
V
DD
V
SS
V
SS
V
SS
V
DD
V
DDQ
DQA
DQA
M
N
DQPD
SCD
V
DDQ
V
SS
NC
A
NC
V
SS
V
DDQ
NC
DQPA
N
P
NC
NC
A
A
TDI
A1
TDO
A
A
A
A
P
R
LBO
A
A
A
TMS
A0
TCK
A
A
A
A
R
11 x 15 Bump BGA--15 mm x 17 mm Body--1.0 mm Bump Pitch
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
7/41
2001, GSI Technology
GS832218/36 165-Bump BGA Pin Description
Symbol
Type
Description
A
0
, A
1
I
Address field LSBs and Address Counter Preset Inputs
An
I
Address Inputs
DQ
A
DQ
B
DQ
C
DQ
D
I/O
Data Input and Output pins
B
A
, B
B
, B
C
, B
D
I
Byte Write Enable for DQ
A
, DQ
B
, DQ
C
, DQ
D
I/Os; active low (x36 Version)
NC
--
No Connect
CK
I
Clock Input Signal; active high
BW
I
Byte Write--Writes all enabled bytes; active low
GW
I
Global Write Enable--Writes all bytes; active low
E
1
I
Chip Enable; active low
E
3
I
Chip Enable; active low
E
2
I
Chip Enable; active high
G
I
Output Enable; active low
ADV
I
Burst address counter advance enable; active l0w
ADSC, ADSP
I
Address Strobe (Processor, Cache Controller); active low
ZZ
I
Sleep mode control; active high
FT
I
Flow Through or Pipeline mode; active low
LBO
I
Linear Burst Order mode; active low
ZQ
I
FLXDrive Output Impedance Control (Low = Low Impedance [High Drive], High = High Impedance [Low
Drive])
TMS
I
Scan Test Mode Select
TDI
I
Scan Test Data In
TDO
O
Scan Test Data Out
TCK
I
Scan Test Clock
MCL
--
Must Connect Low
SCD
--
Single Cycle Deselect/Dual Cyle Deselect Mode Control
V
DD
I
Core power supply
V
SS
I
I/O and Core Ground
V
DDQ
I
Output driver power supply
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
8/41
2001, GSI Technology
119-Bump BGA--x36 Common I/O--Top View
1
2
3
4
5
6
7
A
V
DDQ
A
A
ADSP
A
A
V
DDQ
A
B
NC
A
A
ADSC
A
A
NC
B
C
NC
A
A
V
DD
A
A
NC
C
D
DQ
C
DQP
C
V
SS
ZQ
V
SS
DQP
B
DQ
B
D
E
DQ
C
DQ
C
V
SS
E1
V
SS
DQ
B
DQ
B
E
F
V
DDQ
DQ
C
V
SS
G
V
SS
DQ
B
V
DDQ
F
G
DQ
C2
DQ
C
BC
ADV
BB
DQ
B
DQ
B
G
H
DQ
C
DQ
C
V
SS
GW
V
SS
DQ
B
DQ
B
H
J
V
DDQ
V
DD
NC
V
DD
NC
V
DD
V
DDQ
J
K
DQ
D
DQ
D
V
SS
CK
V
SS
DQ
A
DQ
A
K
L
DQ
D
DQ
D
BD
SCD
BA
DQ
A
DQ
A
L
M
V
DDQ
DQ
D
V
SS
BW
V
SS
DQ
A
V
DDQ
M
N
DQ
D
DQ
D
V
SS
A1
V
SS
DQ
A
DQ
A
N
P
DQ
D
DQP
D
V
SS
A0
V
SS
DQP
A
DQ
A
P
R
NC
A
LBO
V
DD
FT
A
NC
R
T
NC
NC
A
A
A
A
ZZ
T
U
V
DDQ
TMS
TDI
TCK
TDO
NC
V
DDQ
U
7 x 17 Bump BGA--14 x 22 mm
2
Body--1.27 mm Bump Pitch
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
9/41
2001, GSI Technology
119-Bump BGA--x18 Common I/O--Top View
1
2
3
4
5
6
7
A
V
DDQ
A
A
ADSP
A
A
V
DDQ
A
B
NC
A
A
ADSC
A
A
NC
B
C
NC
A
A
V
DD
A
A
NC
C
D
DQ
B
NC
V
SS
ZQ
V
SS
DQP
A
NC
D
E
NC
DQ
B
V
SS
E1
V
SS
NC
DQ
A
E
F
V
DDQ
NC
V
SS
G
V
SS
DQ
A
V
DDQ
F
G
NC
DQ
B
BB
ADV
NC
NC
DQ
A
G
H
DQ
B
NC
V
SS
GW
V
SS
DQ
A
NC
H
J
V
DDQ
V
DD
NC
V
DD
NC
V
DD
V
DDQ
J
K
NC
DQ
B
V
SS
CK
V
SS
NC
DQ
A
K
L
DQ
B
NC
NC
SCD
BA
DQ
A
NC
L
M
V
DDQ
DQ
B
V
SS
BW
V
SS
NC
V
DDQ
M
N
DQ
B
NC
V
SS
A1
V
SS
DQ
A
NC
N
P
NC
DQP
B
V
SS
A0
V
SS
NC
DQ
A
P
R
NC
A
LBO
V
DD
FT
A
NC
R
T
NC
A
A
A
A
A
ZZ
T
U
V
DDQ
TMS
TDI
TCK
TDO
NC
V
DDQ
U
7 x 17 Bump BGA--14 x 22 mm
2
Body--1.27 mm Bump Pitch
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
10/41
2001, GSI Technology
GS832218/36 119-Bump BGA Pin Description
Symbol
Type
Description
A
0
, A
1
I
Address field LSBs and Address Counter Preset Inputs
An
I
Address Inputs
DQ
A
DQ
B
DQ
C
DQ
D
I/O
Data Input and Output pins
B
A
, B
B
, B
C
, B
D
I
Byte Write Enable for DQ
A
, DQ
B
, DQ
C
, DQ
D
I/Os; active low
NC
--
No Connect
CK
I
Clock Input Signal; active high
BW
I
Byte Write--Writes all enabled bytes; active low
GW
I
Global Write Enable--Writes all bytes; active low
E
1
I
Chip Enable; active low
G
I
Output Enable; active low
ADV
I
Burst address counter advance enable; active low
ADSP, ADSC
I
Address Strobe (Processor, Cache Controller); active low
ZZ
I
Sleep mode control; active high
FT
I
Flow Through or Pipeline mode; active low
LBO
I
Linear Burst Order mode; active low
ZQ
I
FLXDrive Output Impedance Control (Low = Low Impedance [High Drive], High = High Impedance [Low
Drive])
SCD
I
Single Cycle Deselect/Dual Cyle Deselect Mode Control
TMS
I
Scan Test Mode Select
TDI
I
Scan Test Data In
TDO
O
Scan Test Data Out
TCK
I
Scan Test Clock
V
DD
I
Core power supply
V
SS
I
I/O and Core Ground
V
SS
I
I/O and Core Ground
V
DDQ
I
Output driver power supply
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
11/41
2001, GSI Technology
GS832218/36 Block Diagram
A1
A0
A0
A1
D0
D1
Q1
Q0
Counter
Load
D
Q
D
Q
Register
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
Reg
i
ster
D
Q
Re
giste
r
A0An
LBO
ADV
CK
ADSC
ADSP
GW
BW
E
1
FT
G
ZZ
Power Down
Control
Memory
Array
36
36
4
A
Q
D
DQx1DQx9
36
36
Note: Only x36 version shown for simplicity.
SCD
36
36
B
A
B
B
B
C
B
D
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
12/41
2001, GSI Technology
Note:
There are pull-up devices on the ZQ, SCD, and FT pins and a pull-down device on the ZZ pin, so those input pins can be unconnected and the
chip will operate in the default states as specified in the above tables.
Burst Counter Sequences
BPR 1999.05.18
Mode Pin Functions
Mode Name
Pin
Name
State
Function
Burst Order Control
LBO
L
Linear Burst
H
Interleaved Burst
Output Register Control
FT
L
Flow Through
H or NC
Pipeline
Power Down Control
ZZ
L or NC
Active
H
Standby, I
DD
= I
SB
Single/Dual Cycle Deselect Control
SCD
L
Dual Cycle Deselect
H or NC
Single Cycle Deselect
FLXDrive Output Impedance Control
ZQ
L
High Drive (Low Impedance)
H or NC
Low Drive (High Impedance)
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
I
nterleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
13/41
2001, GSI Technology
Notes:
1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
2. Byte Write Enable inputs B
A
, B
B
, B
C
, and/or B
D
may be used in any combination with BW to write single or multiple bytes.
3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
4. Bytes "
C
" and "
D
" are only available on the x36 version.
Byte Write Truth Table
Function
GW
BW
B
A
B
B
B
C
B
D
Notes
Read
H
H
X
X
X
X
1
Read
H
L
H
H
H
H
1
Write byte a
H
L
L
H
H
H
2, 3
Write byte b
H
L
H
L
H
H
2, 3
Write byte c
H
L
H
H
L
H
2, 3, 4
Write byte d
H
L
H
H
H
L
2, 3, 4
Write all bytes
H
L
L
L
L
L
2, 3, 4
Write all bytes
L
X
X
X
X
X
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
14/41
2001, GSI Technology
Synchronous Truth Table
Operation
Address Used
State
Diagram
Key
5
E
1
ADSP
ADSC
ADV
W
3
DQ
4
Deselect Cycle, Power Down
None
X
H
X
L
X
X
High-Z
Read Cycle, Begin Burst
External
R
L
L
X
X
X
Q
Read Cycle, Begin Burst
External
R
L
H
L
X
F
Q
Write Cycle, Begin Burst
External
W
L
H
L
X
T
D
Read Cycle, Continue Burst
Next
CR
X
H
H
L
F
Q
Read Cycle, Continue Burst
Next
CR
H
X
H
L
F
Q
Write Cycle, Continue Burst
Next
CW
X
H
H
L
T
D
Write Cycle, Continue Burst
Next
CW
H
X
H
L
T
D
Read Cycle, Suspend Burst
Current
X
H
H
H
F
Q
Read Cycle, Suspend Burst
Current
H
X
H
H
F
Q
Write Cycle, Suspend Burst
Current
X
H
H
H
T
D
Write Cycle, Suspend Burst
Current
H
X
H
H
T
D
Notes:
1. X = Don't Care, H = High, L = Low
2. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding
3. G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown
as "Q" in the Truth Table above).
4. All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish
basic synchronous or synchronous burst operations and may be avoided for simplicity.
5. Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above.
6. Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above.
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
15/41
2001, GSI Technology
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
Simple Synchronous Operation
Simple Burst Synchronou
s Operation
CR
R
CW
CR
CR
Notes:
1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
2. The upper portion of the diagram assumes active use of only the Enable (E1) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs and
assumes ADSP is tied high and ADV is tied low.
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
16/41
2001, GSI Technology
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
2. Use of "Dummy Reads" (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
3. Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM's drivers off and for incoming data to meet
Data Input Set Up Time.
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
17/41
2001, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
Description
Value
Unit
V
DD
Voltage on V
DD
Pins
0.5 to 4.6
V
V
DDQ
Voltage in V
DDQ
Pins
0.5 to 4.6
V
V
I/O
Voltage on I/O Pins
0.5 to V
DDQ
+0.5 (
4.6 V max.)
V
V
IN
Voltage on Other Input Pins
0.5 to V
DD
+0.5 (
4.6 V max.)
V
I
IN
Input Current on Any Pin
+/20
mA
I
OUT
Output Current on Any I/O Pin
+/20
mA
P
D
Package Power Dissipation
1.5
W
T
STG
Storage Temperature
55 to 125
o
C
T
BIAS
Temperature Under Bias
55 to 125
o
C
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
V
DD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
V
DD2
2.3
2.5
2.7
V
3.3 V V
DDQ
I/O Supply Voltage
V
DDQ3
3.0
3.3
3.6
V
2.5 V V
DDQ
I/O Supply Voltage
V
DDQ2
2.3
2.5
2.7
V
Notes:
1. The part numbers of Industrial Temperature Range versions end the character "I". Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be 2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
18/41
2001, GSI Technology
V
DDQ3
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
2.0
--
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
0.3
--
0.8
V
1
V
DDQ
I/O Input High Voltage
V
IHQ
2.0
--
V
DDQ
+ 0.3
V
1,3
V
DDQ
I/O Input Low Voltage
V
ILQ
0.3
--
0.8
V
1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character "I". Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be 2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3. V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
V
DDQ2
Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
V
DD
Input High Voltage
V
IH
0.6*V
DD
--
V
DD
+ 0.3
V
1
V
DD
Input Low Voltage
V
IL
0.3
--
0.3*V
DD
V
1
V
DDQ
I/O Input High Voltage
V
IHQ
0.6*V
DD
--
V
DDQ
+ 0.3
V
1,3
V
DDQ
I/O Input Low Voltage
V
ILQ
0.3
--
0.3*V
DD
V
1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character "I". Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be 2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3. V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
C
2
Ambient Temperature (Industrial Range Versions)
T
A
40
25
85
C
2
Notes:
1. The part numbers of Industrial Temperature Range versions end the character "I". Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be 2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
19/41
2001, GSI Technology
Note:
These parameters are sample tested.
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
= 2.5 V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
C
IN
V
IN
= 0 V
4
5
pF
Input/Output Capacitance
C
I/O
V
OUT
= 0 V
6
7
pF
AC Test Conditions
Parameter
Conditions
Input high level
V
DD
0.2 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
V
DDQ
/2
Output reference level
V
DDQ
/2
Output load
Fig. 1
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Device is deselected as defined by the Truth Table.
20% tKC
V
SS
2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+ 2.0 V
50%
V
DD
V
IL
DQ
V
DDQ/2
50
30pF
*
Output Load 1
* Distributed Test Jig Capacitance
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
20/41
2001, GSI Technology
DC Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage Current
(except mode pins)
I
IL
V
IN
= 0 to V
DD
2 uA
2 uA
ZZ Input Current
I
IN1
V
DD
V
IN
V
IH
0 V
V
IN
V
IH
1 uA
1 uA
1 uA
100 uA
FT, SCD, ZQ Input Current
I
IN2
V
DD
V
IN
V
IL
0 V
V
IN
V
IL
100 uA
1 uA
1 uA
1 uA
Output Leakage Current (x36/x72)
I
OL
Output Disable, V
OUT
= 0 to V
DD
1 uA
1 uA
Output Leakage Current (x18)
I
OL
Output Disable, V
OUT
= 0 to V
DD
1 uA
1 uA
Output High Voltage
V
OH2
I
OH
= 8 mA, V
DDQ
= 2.375 V
1.7 V
--
Output High Voltage
V
OH3
I
OH
= 8 mA, V
DDQ
= 3.135 V
2.4 V
--
Output Low Voltage
V
OL
I
OL
= 8 mA
--
0.4 V
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
21/41
2001, GSI Technology
Notes:
1.
I
DD
a
nd I
DDQ
apply to an
y combination of V
DD3
, V
DD2
, V
DD
Q
3
, and V
DDQ2
operation.
2.
All p
a
rameters listed are worst case scenario.
Operating Currents
Par
a
meter
T
est
Co
nd
itio
ns
Mo
de
Sym
b
o
l
-250
-225
-200
-166
-150
-133
Un
it
0
to
70C
40
to
85C
0
to
70C

40
to
85C
0
to
70C
40
to
85C
0
to
70
C

40
to
85C
0
to
70C
40
to
85C
0
to
70C

40
to
85C
Operating
Current
Devi
ce Selec
t
ed;
All other input
s

V
IH

o
r
V
IL
Output

o
pen
(x72)
Pipeline
I
DD
I
DDQ
38
0
60
400
60
350
60
370
60
320
50
340
50
280
40
300
40
260
40
28
0
40
235
30
255
30
mA
Flow
Through
I
DD
I
DDQ
27
5
40
285
40
255
40
265
40
235
30
245
30
225
30
235
30
210
30
22
0
30
210
20
220
20
mA
(x36)
Pipeline
I
DD
I
DDQ
30
0
50
320
50
275
45
295
45
255
40
275
40
225
35
245
35
210
30
23
0
30
190
25
210
25
mA
Flow
Through
I
DD
I
DDQ
21
0
25
220
25
200
25
210
25
190
20
200
20
180
20
190
20
170
20
18
0
20
160
15
170
15
mA
(x18)
Pipeline
I
DD
I
DDQ
26
0
25
280
25
240
25
260
25
225
20
245
20
200
20
220
20
190
20
21
0
20
170
15
190
15
mA
Flow
Through
I
DD
I
DDQ
19
0
15
200
15
180
15
190
15
170
15
180
15
160
15
170
15
150
15
16
0
15
140
15
150
15
mA
Standby
Current
ZZ

V
DD
0.2 V
--
Pipeline
I
SB
6
0
80
60
80
60
80
60
80
60
8
0
60
80
mA
Flow
Through
I
SB
6
0
80
60
80
60
80
60
80
60
8
0
60
80
mA
Des
e
lect
Current
Dev
i
ce D
e
selec
t
ed;
All other input
s
V
IH

or


V
IL
--
Pipeline
I
DD
1
0
0
1
15
95
1
1
0
9
0
105
85
100
85
1
0
0
8
0
9
5
mA
Flow
Through
I
DD
8
5
100
85
100
80
95
80
95
75
9
0
70
85
mA
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
22/41
2001, GSI Technology
Notes:
1. These parameters are sampled and are not 100% tested.
2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
AC Electrical Characteristics
Parameter
Symbol
-250
-225
-200
-166
-150
-133
Unit
Min
Max
Min
Max
Min
Max
Min
Max Min Max Min Max
Pipeline
Clock Cycle Time
tKC
4.0
--
4.4
--
5.0
--
6.0
--
6.7
--
7.5
--
ns
Clock to Output Valid (x18/x36)
tKQ
--
2.5
--
2.7
--
3.0
--
3.5
--
3.8
--
4.0
ns
Clock to Output Valid (x72)
tKQ
--
3.0
--
3.0
--
3.0
--
3.5
--
3.8
--
4.0
ns
Clock to Output Invalid
tKQX
1.5
--
1.5
--
1.5
--
1.5
--
1.5
--
1.5
--
ns
Clock to Output in Low-Z
tLZ
1
1.5
--
1.5
--
1.5
--
1.5
--
1.5
--
1.5
--
ns
Setup time
tS
1.2
--
1.3
--
1.4
--
1.5
--
1.5
--
1.5
--
ns
Hold time
tH
0.2
--
0.3
--
0.4
--
0.5
--
0.5
--
0.5
--
ns
Flow
Through
Clock Cycle Time
tKC
6.5
--
7.0
--
7.5
--
8.0
--
8.5
--
8.5
--
ns
Clock to Output Valid
tKQ
--
6.5
--
7.0
--
7.5
--
8.0
--
8.5
--
8.5
ns
Clock to Output Invalid
tKQX
3.0
--
3.0
--
3.0
--
3.0
--
3.0
--
3.0
--
ns
Clock to Output in Low-Z
tLZ
1
3.0
--
3.0
--
3.0
--
3.0
--
3.0
--
3.0
--
ns
Setup time
tS
1.5
--
1.5
--
1.5
--
1.5
--
1.5
--
1.5
--
ns
Hold time
tH
0.5
--
0.5
--
0.5
--
0.5
--
0.5
--
0.5
--
ns
Clock HIGH Time
tKH
1.3
--
1.3
--
1.3
--
1.3
--
1.5
--
1.7
--
ns
Clock LOW Time
tKL
1.5
--
1.5
--
1.5
--
1.5
--
1.7
--
2
--
ns
Clock to Output in
High-Z (x18/x36)
tHZ
1
1.5 2.5
1.5 2.7
1.5 3.0
1.5
3.0
1.5 3.0
1.5 3.0
ns
Clock to Output in
High-Z (x72)
tHZ
1
1.5 3.0
1.5 3.0
1.5 3.0
1.5
3.0
1.5 3.0
1.5 3.0
ns
G to Output Valid
(x18/x36)
tOE
--
2.5
--
2.7
--
3.0
--
3.5
--
3.8
--
4.0
ns
G to Output Valid
(x72)
tOE
--
3.0
--
3.0
--
3.0
--
3.5
--
3.8
--
4.0
ns
G to output in Low-Z
tOLZ
1
0
--
0
--
0
--
0
--
0
--
0
--
ns
G to output in High-Z (x18/x36)
tOHZ
1
--
2.5
--
2.7
--
3.0
--
3.0
--
3.0
--
3.0
ns
G to output in High-Z (x72)
tOHZ
1
--
3.0
--
3.0
--
3.0
--
3.0
--
3.0
--
3.0
ns
ZZ setup time
tZZS
2
5
--
5
--
5
--
5
--
5
--
5
--
ns
ZZ hold time
tZZH
2
1
--
1
--
1
--
1
--
1
--
1
--
ns
ZZ recovery
tZZR
20
--
20
--
20
--
20
--
20
--
20
--
ns
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
23/41
2001, GSI Technology
Pipeline Mode Timing (SCD)
Begin
Read A
Cont
Cont
Deselect Write B
Read C
Read C+1 Read C+2 Read C+3 Cont
Deselect
tHZ
tKQX
tKQ
tLZ
tH
tS
tOHZ
tOE
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tS
tH
tS
tH
tS
tH
tS
Burst Read
Burst Read
Single Write
tKC
tKC
tKL
tKL
tKH
Single Write
Single Read
tKH
Single Read
Q(A)
D(B)
Q(C)
Q(C+1)
Q(C+2)
Q(C+3)
A
B
C
Deselected with E1
E1 masks ADSP
E2 and E3 only sampled with ADSP and ADSC
ADSC initiated read
CK
ADSP
ADSC
ADV
A0An
GW
BW
BaBd
E1
E2
E3
G
DQaDQd
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
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Rev: 1.06 9/2004
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2001, GSI Technology
Flow Through Mode Timing (SCD)
Begin
Read A
Cont
Cont
Write B
Read C
Read C+1 Read C+2 Read C+3 Read C
Cont
Deselect
tHZ
tKQX
tKQ
tLZ
tH
tS
tOHZ
tOE
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tKC
tKC
tKL
tKL
tKH
tKH
A
B
C
Q(A)
D(B)
Q(C)
Q(C+1)
Q(C+2)
Q(C+3)
Q(C)
E2 and E3 only sampled with ADSC
ADSC initiated read
Deselected with E1
Fixed High
CK
ADSP
ADSC
ADV
A0An
GW
BW
BaBd
E1
E2
E3
G
DQaDQd
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
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Rev: 1.06 9/2004
25/41
2001, GSI Technology
Pipeline Mode Timing (DCD)
Begin
Read A
Cont
Deselect Deselect Write B
Read C
Read C+1 Read C+2 Read C+3 Cont
Deselect Deselect
tHZ
tKQX
tKQ
tLZ
tH
tS
tOHZ
tOE
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tS
tH
tS
tH
tS
tH
tS
tKC
tKC
tKL
tKL
tKH
tKH
Q(A)
D(B)
Q(C)
Q(C+1)
Q(C+2)
Q(C+3)
A
B
C
Hi-Z
Deselected with E1
E2 and E3 only sampled with ADSC
ADSC initiated read
CK
ADSP
ADSC
ADV
AoAn
GW
BW
BaBd
E1
E2
E3
G
DQaDQd
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
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2001, GSI Technology
Flow Through Mode Timing (DCD)
Begin
Read A
Cont
Deselect Write B
Read C
Read C+1 Read C+2 Read C+3 Read C
Deselect
tHZ
tKQX
tLZ
tH
tS
tOHZ
tOE
tKQ
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tH
tS
tKC
tKC
tKL
tKL
tKH
tKH
A
B
C
Q(A)
D(B)
Q(C)
Q(C+1)
Q(C+2)
Q(C+3)
Q(C)
E2 and E3 only sampled with ADSP and ADSC
E1 masks ADSP
ADSC initiated read
Deselected with E1
E1 masks ADSP
Fixed High
CK
ADSP
ADSC
ADV
AoAn
GW
BW
BaBd
E1
E2
E3
G
DQaDQd
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
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Rev: 1.06 9/2004
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2001, GSI Technology
Sleep Mode
During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high,
the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to
low, the SRAM operates normally after ZZ recovery time.
Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to I
SB
2. The duration of
Sleep mode is dictated by the length of time the ZZ is in a High state. After entering Sleep mode, all inputs except ZZ become
disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode.
When the ZZ pin is driven high, I
SB
2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending
operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated
until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands
may be applied while the SRAM is recovering from Sleep mode.
Sleep Mode Timing
Application Tips
Single and Dual Cycle Deselect
SCD devices (like this one) force the use of "dummy read cycles" (read cycles that are launched normally, but that are ended with
the output drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance, but their use usually
assures there will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs do not waste
bandwidth on dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at
bank address boundary crossings), but greater care must be exercised to avoid excessive bus contention.
JTAG Port Operation
Overview
The JTAG Port on this RAM operates in a manner that is compliant with IEEE Standard 1149.1-1990, a serial boundary scan
interface standard (commonly referred to as JTAG). The JTAG Port input interface levels scale with V
DD
. The JTAG output
drivers are powered by V
DDQ
.
Disabling the JTAG Port
It is possible to use this device without utilizing the JTAG port. The port is reset at power-up and will remain inactive unless
clocked. TCK, TDI, and TMS are designed with internal pull-up circuits.To assure normal operation of the RAM with the JTAG
Port unused, TCK, TDI, and TMS may be left floating or tied to either V
DD
or V
SS
. TDO should be left unconnected.
tZZR
tZZH
tZZS
Hold
Setup
tKL
tKL
tKH
tKH
tKC
tKC
CK
ADSP
ADSC
ZZ
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
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2001, GSI Technology
JTAG Port Registers
Overview
The various JTAG registers, refered to as Test Access Port orTAP Registers, are selected (one at a time) via the sequences of 1s
and 0s applied to TMS as TCK is strobed. Each of the TAP Registers is a serial shift register that captures serial input data on the
rising edge of TCK and pushes serial data out on the next falling edge of TCK. When a register is selected, it is placed between the
TDI and TDO pins.
Instruction Register
The Instruction Register holds the instructions that are executed by the TAP controller when it is moved into the Run, Test/Idle, or
the various data register states. Instructions are 3 bits long. The Instruction Register can be loaded when it is placed between the
TDI and TDO pins. The Instruction Register is automatically preloaded with the IDCODE instruction at power-up or whenever the
controller is placed in Test-Logic-Reset state.
Bypass Register
The Bypass Register is a single bit register that can be placed between TDI and TDO. It allows serial test data to be passed through
the RAM's JTAG Port to another device in the scan chain with as little delay as possible.
Boundary Scan Register
The Boundary Scan Register is a collection of flip flops that can be preset by the logic level found on the RAM's input or I/O pins.
The flip flops are then daisy chained together so the levels found can be shifted serially out of the JTAG Port's TDO pin. The
Boundary Scan Register also includes a number of place holder flip flops (always set to a logic 1). The relationship between the
device pins and the bits in the Boundary Scan Register is described in the Scan Order Table following. The Boundary Scan
Register, under the control of the TAP Controller, is loaded with the contents of the RAMs I/O ring when the controller is in
Capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to Shift-DR state. SAMPLE-Z,
SAMPLE/PRELOAD and EXTEST instructions can be used to activate the Boundary Scan Register.
JTAG Pin Descriptions
Pin
Pin Name
I/O
Description
TCK
Test Clock
In
Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate
from the falling edge of TCK.
TMS
Test Mode Select
In
The TMS input is sampled on the rising edge of TCK. This is the command input for the TAP
controller state machine. An undriven TMS input will produce the same result as a logic one input
level.
TDI
Test Data In
In
The TDI input is sampled on the rising edge of TCK. This is the input side of the serial registers
placed between TDI and TDO. The register placed between TDI and TDO is determined by the
state of the TAP Controller state machine and the instruction that is currently loaded in the TAP
Instruction Register (refer to the TAP Controller State Diagram). An undriven TDI pin will produce
the same result as a logic one input level.
TDO
Test Data Out
Out
Output that is active depending on the state of the TAP state machine. Output changes in
response to the falling edge of TCK. This is the output side of the serial registers placed between
TDI and TDO.
Note:
This device does not have a TRST (TAP Reset) pin. TRST is optional in IEEE 1149.1. The Test-Logic-Reset state is entered while TMS is
held high for five rising edges of TCK. The TAP Controller is also reset automaticly at power-up.
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
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JTAG TAP Block Diagram
Identification (ID) Register
The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in
Capture-DR state with the IDCODE command loaded in the Instruction Register. The code is loaded from a 32-bit on-chip ROM.
It describes various attributes of the RAM as indicated below. The register is then placed between the TDI and TDO pins when the
controller is moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins.
ID Register Contents TBD for this part.
Instruction Register
ID Code Register
Boundary Scan Register
0
1
2
0
31 30 29
1
2
0
Bypass Register
TDI
TDO
TMS
TCK
Test Access Port (TAP) Controller
108
1
0
Control Signals
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
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2001, GSI Technology
Tap Controller Instruction Set
Overview
There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific
(Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be
implemented in prescribed ways. The TAP on this device may be used to monitor all input and I/O pads, and can be used to load
address, data or control signals into the RAM or to preload the I/O buffers.
When the TAP controller is placed in Capture-IR state the two least significant bits of the instruction register are loaded with 01.
When the controller is moved to the Shift-IR state the Instruction Register is placed between TDI and TDO. In this state the desired
instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the
TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction set for this
device is listed in the following table.
ID Register Contents
Die
Revision
Code
Not Used
I/O
Configuration
GSI Technology
JEDEC Vendor
ID Code
P
r
esence Register
Bit # 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
0
x72
X X X X
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
1
0
0 0 1 1 0 1 1 0 0 1
1
x36
X X X X
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0 0 1 1 0 1 1 0 0 1
1
x32
X X X X
0
0
0
0
0
0
0
0
0
0
0
0
1
1
0
0
0
0 0 1 1 0 1 1 0 0 1
1
x18
X X X X
0
0
0
0
0
0
0
0
0
0
0
0
1
0
1
0
0
0 0 1 1 0 1 1 0 0 1
1
x16
X X X X
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
0
0
0 0 1 1 0 1 1 0 0 1
1
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
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2001, GSI Technology
JTAG Tap Controller State Diagram
Instruction Descriptions
BYPASS
When the BYPASS instruction is loaded in the Instruction Register the Bypass Register is placed between TDI and TDO. This
occurs when the TAP controller is moved to the Shift-DR state. This allows the board level scan path to be shortened to facili-
tate testing of other devices in the scan path.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE / PRELOAD instruction is
loaded in the Instruction Register, moving the TAP controller into the Capture-DR state loads the data in the RAMs input and
I/O buffers into the Boundary Scan Register. Boundary Scan Register locations are not associated with an input or I/O pin, and
are loaded with the default state identified in the Boundary Scan Chain table at the end of this section of the datasheet. Because
the RAM clock is independent from the TAP Clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents
while the input buffers are in transition (i.e. in a metastable state). Although allowing the TAP to sample metastable inputs will
not harm the device, repeatable results cannot be expected. RAM input signals must be stabilized for long enough to meet the
TAPs input data capture set-up plus hold time (tTS plus tTH). The RAMs clock inputs need not be paused for any other TAP
operation except capturing the I/O ring contents into the Boundary Scan Register. Moving the controller to Shift-DR state then
places the boundary scan register between the TDI and TDO pins.
EXTEST
EXTEST is an IEEE 1149.1 mandatory public instruction. It is to be executed whenever the instruction register is loaded with
all logic 0s. The EXTEST command does not block or override the RAM's input pins; therefore, the RAM's internal state is
still determined by its input pins.
Select DR
Capture DR
Shift DR
Exit1 DR
Pause DR
Exit2 DR
Update DR
Select IR
Capture IR
Shift IR
Exit1 IR
Pause IR
Exit2 IR
Update IR
Test Logic Reset
Run Test Idle
0
0
1
0
1
1
0
0
1
1
1
0
0
1
1
0
0
0
0
1
1
0
0
1
1
0
0
0
1
1
1
1
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
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2001, GSI Technology
Typically, the Boundary Scan Register is loaded with the desired pattern of data with the SAMPLE/PRELOAD command.
Then the EXTEST command is used to output the Boundary Scan Register's contents, in parallel, on the RAM's data output
drivers on the falling edge of TCK when the controller is in the Update-IR state.
Alternately, the Boundary Scan Register may be loaded in parallel using the EXTEST command. When the EXTEST instruc-
tion is selected, the sate of all the RAM's input and I/O pins, as well as the default values at Scan Register locations not asso-
ciated with a pin, are transferred in parallel into the Boundary Scan Register on the rising edge of TCK in the Capture-DR
state, the RAM's output pins drive out the value of the Boundary Scan Register location with which each output pin is associ-
ated.
IDCODE
The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in Capture-DR mode and
places the ID register between the TDI and TDO pins in Shift-DR mode. The IDCODE instruction is the default instruction
loaded in at power up and any time the controller is placed in the Test-Logic-Reset state.
SAMPLE-Z
If the SAMPLE-Z instruction is loaded in the instruction register, all RAM outputs are forced to an inactive drive state (high-
Z) and the Boundary Scan Register is connected between TDI and TDO when the TAP controller is moved to the Shift-DR
state.
RFU
These instructions are Reserved for Future Use. In this device they replicate the BYPASS instruction.
JTAG TAP Instruction Set Summary
Instruction
Code
Description
Notes
EXTEST
000
Places the Boundary Scan Register between TDI and TDO.
1
IDCODE
001
Preloads ID Register and places it between TDI and TDO.
1, 2
SAMPLE-Z
010
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
Forces all RAM output drivers to High-Z.
1
RFU
011
Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
1
SAMPLE/
PRELOAD
100
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
1
GSI
101
GSI private instruction.
1
RFU
110
Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
1
BYPASS
111
Places Bypass Register between TDI and TDO.
1
Notes:
1. Instruction codes expressed in binary, MSB on left, LSB on right.
2. Default instruction automatically loaded at power-up and in test-logic-reset state.
Preliminary
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JTAG Port Recommended Operating Conditions and DC Characteristics
Parameter
Symbol
Min.
Max.
Unit Notes
3.3 V Test Port Input High Voltage
V
IHJ3
2.0
V
DD3
+0.3
V
1
3.3 V Test Port Input Low Voltage
V
ILJ3
0.3
0.8
V
1
2.5 V Test Port Input High Voltage
V
IHJ2
0.6 * V
DD2
V
DD2
+0.3
V
1
2.5 V Test Port Input Low Voltage
V
ILJ2
0.3
0.3 * V
DD2
V
1
TMS, TCK and TDI Input Leakage Current
I
INHJ
300
1
uA
2
TMS, TCK and TDI Input Leakage Current
I
INLJ
1
100
uA
3
TDO Output Leakage Current
I
OLJ
1
1
uA
4
Test Port Output High Voltage
V
OHJ
1.7
--
V
5, 6
Test Port Output Low Voltage
V
OLJ
--
0.4
V
5, 7
Test Port Output CMOS High
V
OHJC
V
DDQ
100 mV
--
V
5, 8
Test Port Output CMOS Low
V
OLJC
--
100 mV
V
5, 9
Notes:
1. Input Under/overshoot voltage must be 2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tTKC.
2. V
ILJ
V
IN
V
DDn
3. 0 V
V
IN
V
ILJn
4. Output Disable, V
OUT
= 0 to V
DDn
5. The TDO output driver is served by the V
DDQ
supply.
6. I
OHJ
= 4 mA
7. I
OLJ
= + 4 mA
8. I
OHJC
= 100 uA
9. I
OHJC
= +100 uA
Notes:
1. Include scope and jig capacitance.
2. Test conditions as as shown unless otherwise noted.
JTAG Port AC Test Conditions
Parameter
Conditions
Input high level
V
DD
0.2 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
V
DDQ
/2
Output reference level
V
DDQ
/2
DQ
V
DDQ
/2
50
30pF
*
JTAG Port AC Test Load
* Distributed Test Jig Capacitance
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
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2001, GSI Technology
JTAG Port Timing Diagram
Boundary Scan (BSDL Files)
For information regarding the Boundary Scan Chain, or to obtain BSDL files for this part, please contact our Applications
Engineering Department at: apps@gsitechnology.com.
JTAG Port AC Electrical Characteristics
Parameter
Symbol
Min
Max
Unit
TCK Cycle Time
tTKC
50
--
ns
TCK Low to TDO Valid
tTKQ
--
20
ns
TCK High Pulse Width
tTKH
20
--
ns
TCK Low Pulse Width
tTKL
20
--
ns
TDI & TMS Set Up Time
tTS
10
--
ns
TDI & TMS Hold Time
tTH
10
--
ns
tTH
tTS
tTKQ
tTH
tTS
tTH
tTS
tTKL
tTKL
tTKH
tTKH
tTKC
tTKC
TCK
TDI
TMS
TDO
Parallel SRAM input
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
35/41
2001, GSI Technology
209 BGA Package Drawing (Package C)
14 mm x 22 mm Body, 1.0 mm Bump Pitch, 11 x 19 Bump Array
Symbol
Min
Typ
Max
Units
Symbol
Min
Typ
Max
Units
A
--
--
1.70
mm
D1
--
18.0 (BSC)
--
mm
A1
0.40
0.50
0.60
mm
E
13.9
14.0
14.1
mm
b
0.50
0.60
0.70
mm
E1
--
10.0 (BSC)
--
mm
c
0.31
0.36
0.38
mm
e
--
1.00 (BSC)
--
mm
D
21.9
22.0
22.1
mm
aaa
--
0.15
--
mm
Rev 1.0
A
A1
C
b
e
e
E
E1
D1
D
aaa
Bottom View
Side View
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
36/41
2001, GSI Technology
Package Dimensions--119-Bump FPBGA (Package B, Variation 2
)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
1 2 3 4 5 6 7
7 6 5 4 3 2 1
A1
TOP VIEW
A1
BOTTOM VIEW
1.27
7.62
1.
27
20
.3
2
140.10
220.10
B
A
0.20(4x)
0.10
0.30
C
C A B
S
S
0.60~0.90 (119x)
C
SEATING PLANE
0.
15
C
0.
50
~0
.70
1.
86.
0.
1
3
0.
700
.
0
5
0.1
5
C
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
0.
56
0
.0
5
S
S
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
37/41
2001, GSI Technology
Package Dimensions--165-Bump FPBGA (Package E; Variation 1)
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
R
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
1 2 3 4 5 6 7 8 9 10 11
11 10 9 8 7 6 5 4 3 2 1
A1
TOP VIEW
A1
BOTTOM VIEW
1.0
1.0
10.0
1.
0
1.
0
14.
0
150.05
17
0
.0
5
A
B
0.20(4x)
0.10
0.25
C
C A B
M
M
0.44~0.64(165x)
C
SEATING PLANE
0.
20
C
0.
3
6
~0.
4
6
1.40 M
AX.
0.
53 RE
F
0.2
5
C
0.
3
6
RE
F
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
38/41
2001, GSI Technology

Ordering Information for GSI Synchronous Burst RAMs
Org
Part Number
1
Type
Package
Speed
2
(MHz/ns)
T
A
3
2M x 18
GS832218B-250
DCD Pipeline/Flow Through
119 BGA (var.2)
250/6.5
C
2M x 18
GS832218B-225
DCD Pipeline/Flow Through
119 BGA (var.2)
225/7
C
2M x 18
GS832218B-200
DCD Pipeline/Flow Through
119 BGA (var.2)
200/7.5
C
2M x 18
GS832218B-166
DCD Pipeline/Flow Through
119 BGA (var.2)
166/8
C
2M x 18
GS832218B-150
DCD Pipeline/Flow Through
119 BGA (var.2)
150/8.5
C
2M x 18
GS832218B-133
DCD Pipeline/Flow Through
119 BGA (var.2)
133/8.5
C
2M x 18
GS832218E-250
DCD Pipeline/Flow Through
165 BGA (var.1)
250/6.5
C
2M x 18
GS832218E-225
DCD Pipeline/Flow Through
165 BGA (var.1)
225/7
C
2M x 18
GS832218E-200
DCD Pipeline/Flow Through
165 BGA (var.1)
200/7.5
C
2M x 18
GS832218E-166
DCD Pipeline/Flow Through
165 BGA (var.1)
166/8
C
2M x 18
GS832218E-150
DCD Pipeline/Flow Through
165 BGA (var.1)
150/8.5
C
2M x 18
GS832218E-133
DCD Pipeline/Flow Through
165 BGA (var.1)
133/8.5
C
1M x 36
GS832236B-250
SCD/DCD Pipeline/Flow Through
119 BGA (var.2)
250/6.5
C
1M x 36
GS832236B-225
SCD/DCD Pipeline/Flow Through
119 BGA (var.2)
225/7
C
1M x 36
GS832236B-200
SCD/DCD Pipeline/Flow Through
119 BGA (var.2)
200/7.5
C
1M x 36
GS832236B-166
SCD/DCD Pipeline/Flow Through
119 BGA (var.2)
166/8
C
1M x 36
GS832236B-150
SCD/DCD Pipeline/Flow Through
119 BGA (var.2)
150/8.5
C
1M x 36
GS832236B-133
SCD/DCD Pipeline/Flow Through
119 BGA (var.2)
133/8.5
C
1M x 36
GS832236E-250
SCD/DCD Pipeline/Flow Through
165 BGA (var.1)
250/6.5
C
1M x 36
GS832236E-225
SCD/DCD Pipeline/Flow Through
165 BGA (var.1)
225/7
C
1M x 36
GS832236E-200
SCD/DCD Pipeline/Flow Through
165 BGA (var.1)
200/7.5
C
1M x 36
GS832236E-166
SCD/DCD Pipeline/Flow Through
165 BGA (var.1)
166/8
C
1M x 36
GS832236E-150
SCD/DCD Pipeline/Flow Through
165 BGA (var.1)
150/8.5
C
Notes:
1. Customers requiring delivery in Tape and Reel should add the character "T" to the end of the part number. Example: GS832218B-150IB.
2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
3. T
A
= C = Commercial Temperature Range. T
A
= I = Industrial Temperature Range.
4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
39/41
2001, GSI Technology
1M x 36
GS832236E-133
SCD/DCD Pipeline/Flow Through
165 BGA (var.1)
133/8.5
C
512K x 72
GS832272C-250
SCD/DCD Pipeline/Flow Through
209 BGA
250/6.5
C
512K x 72
GS832272C-225
SCD/DCD Pipeline/Flow Through
209 BGA
225/7
C
512K x 72
GS832272C-200
SCD/DCD Pipeline/Flow Through
209 BGA
200/7.5
C
512K x 72
GS832272C-166
SCD/DCD Pipeline/Flow Through
209 BGA
166/8
C
512K x 72
GS832272C-150
SCD/DCD Pipeline/Flow Through
209 BGA
150/8.5
C
512K x 72
GS832272C-133
SCD/DCD Pipeline/Flow Through
209 BGA
133/8.5
C
2M x 18
GS832218B-250I
DCD Pipeline/Flow Through
119 BGA (var.2)
250/6.5
I
2M x 18
GS832218B-225I
DCD Pipeline/Flow Through
119 BGA (var.2)
225/7
I
2M x 18
GS832218B-200I
DCD Pipeline/Flow Through
119 BGA (var.2)
200/7.5
I
2M x 18
GS832218B-166I
DCD Pipeline/Flow Through
119 BGA (var.2)
166/8
I
2M x 18
GS832218B-150I
DCD Pipeline/Flow Through
119 BGA (var.2)
150/8.5
I
2M x 18
GS832218B-133I
DCD Pipeline/Flow Through
119 BGA (var.2)
133/8.5
I
2M x 18
GS832218E-250I
DCD Pipeline/Flow Through
165 BGA (var.1)
250/6.5
I
2M x 18
GS832218E-225I
DCD Pipeline/Flow Through
165 BGA (var.1)
225/7
I
2M x 18
GS832218E-200I
DCD Pipeline/Flow Through
165 BGA (var.1)
200/7.5
I
2M x 18
GS832218E-166I
DCD Pipeline/Flow Through
165 BGA (var.1)
166/8
I
2M x 18
GS832218E-150I
DCD Pipeline/Flow Through
165 BGA (var.1)
150/8.5
I
2M x 18
GS832218E-133I
DCD Pipeline/Flow Through
165 BGA (var.1)
133/8.5
I
1M x 36
GS832236B-250I
SCD/DCD Pipeline/Flow Through
119 BGA (var.2)
250/6.5
I
1M x 36
GS832236B-225I
SCD/DCD Pipeline/Flow Through
119 BGA (var.2)
225/7
I
1M x 36
GS832236B-200I
SCD/DCD Pipeline/Flow Through
119 BGA (var.2)
200/7.5
I
1M x 36
GS832236B-166I
SCD/DCD Pipeline/Flow Through
119 BGA (var.2)
166/8
I
1M x 36
GS832236B-150I
SCD/DCD Pipeline/Flow Through
119 BGA (var.2)
150/8.5
I
1M x 36
GS832236B-133I
SCD/DCD Pipeline/Flow Through
119 BGA (var.2)
133/8.5
I
Ordering Information for GSI Synchronous Burst RAMs
(Continued)
Org
Part Number
1
Type
Package
Speed
2
(MHz/ns)
T
A
3
Notes:
1. Customers requiring delivery in Tape and Reel should add the character "T" to the end of the part number. Example: GS832218B-150IB.
2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
3. T
A
= C = Commercial Temperature Range. T
A
= I = Industrial Temperature Range.
4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
40/41
2001, GSI Technology
1M x 36
GS832236E-250I
SCD/DCD Pipeline/Flow Through
165 BGA (var.1)
250/6.5
I
1M x 36
GS832236E-225I
SCD/DCD Pipeline/Flow Through
165 BGA (var.1)
225/7
I
1M x 36
GS832236E-200I
SCD/DCD Pipeline/Flow Through
165 BGA (var.1)
200/7.5
I
1M x 36
GS832236E-166I
SCD/DCD Pipeline/Flow Through
165 BGA (var.1)
166/8
I
1M x 36
GS832236E-150I
SCD/DCD Pipeline/Flow Through
165 BGA (var.1)
150/8.5
I
1M x 36
GS832236E-133I
SCD/DCD Pipeline/Flow Through
165 BGA (var.1)
133/8.5
I
512K x 72
GS832272C-250I
SCD/DCD Pipeline/Flow Through
209 BGA
250/6.5
I
512K x 72
GS832272C-225I
SCD/DCD Pipeline/Flow Through
209 BGA
225/7
I
512K x 72
GS832272C-200I
SCD/DCD Pipeline/Flow Through
209 BGA
200/7.5
I
512K x 72
GS832272C-166I
SCD/DCD Pipeline/Flow Through
209 BGA
166/8
I
512K x 72
GS832272C-150I
SCD/DCD Pipeline/Flow Through
209 BGA
150/8.5
I
512K x 72
GS832272C-133I
SCD/DCD Pipeline/Flow Through
209 BGA
133/8.5
I
Ordering Information for GSI Synchronous Burst RAMs
(Continued)
Org
Part Number
1
Type
Package
Speed
2
(MHz/ns)
T
A
3
Notes:
1. Customers requiring delivery in Tape and Reel should add the character "T" to the end of the part number. Example: GS832218B-150IB.
2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
3. T
A
= C = Commercial Temperature Range. T
A
= I = Industrial Temperature Range.
4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
Preliminary
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 9/2004
41/41
2001, GSI Technology
36Mb Sync SRAM Data Sheet Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Page;Revisions;Reason
832218_r1
Creation of new datasheet
832218_r1; 832218_r1_01
Content
Added 165-BGA package
Updated all power numbers on page 1 and page 26
Updated AC Characteristics table
Removed all references to parity
Updated tables on page 23
Updated FT power numbers
Updated Absolute Maximum Ratings table
Corrected Capacitance table
Updated tKQ (PL) numbers in table on page 1
Updated DC Electrical Characteristics table
Removed Output Load 2 diagram on page 15
Updated standby current numbers in Operating Currents table
Updated timing diagrams
832218_r1_01;
832218_r1_02
Content
Removed erroneous overbars from address pins on the x18
165 BGA pinout
Corrected thickness of "E" package to 1.4 mm
832218_r1_02;
832218_r1_03
Content/Format
Added Thermal Characteristics table to datasheet
Basic format updating
832218_r1_03;
832218_r1_04
Content/Format
Removed erroneous parity references from block diagrams
Removed Thermal Characteristics table from Abs Max section
and added specific thermal tables for each mechanical
drawing
Basic format update
832218_r1_04;
832218_r1_05
Content/Format
Updated format
Added missing tH (Pipeline) in AC Characteristics table
832218_r1_05;
832218_r1_06
Content/Format
Corrected note 1 on table on page 33
Corrected mechanical drawings