Rev: 1.00 1/2003
1/19
2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
256K x 36
9Mb Sync Burst SRAMs
333 MHz200 MHz
1.8 V V
DD
1.8 V I/O
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
Single Cycle Deselect (SCD) operation
1.8 V +10%/10% core power supply
1.8 V I/O supply
LBO pin for Linear or Interleaved Burst mode
Internal input resistors on mode pins allow floating mode pins
Default to Interleaved Pipeline mode
Byte Write (BW) and/or Global Write (GW) operation
Internal self-timed write cycle
Automatic power-down for portable applications
JEDEC-standard 100-lead TQFP package
Functional Description
Applications
The GS880V37BT is a 9,437,184-bit high performance
synchronous SRAM with a 2-bit burst address counter.
Although of a type originally developed for Level 2 Cache
applications supporting high performance CPUs, the device
now finds application in synchronous SRAM applications,
ranging from DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enables (E1, E2, E3), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
SCD Pipelined Reads
The GS880V37BT is a SCD (Single Cycle Deselect) pipelined
synchronous SRAM. DCD (Dual Cycle Deselect) versions are
also available. SCD SRAMs pipeline deselect commands one
stage less than read commands. SCD RAMs begin turning off
their outputs immediately after the deselect command has been
captured in the input registers.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS880V37BT operates on a 1.8 V power supply. All input
are 1.8 V compatible. Separate output power (V
DDQ
) pins are
used to decouple output noise from the internal circuits and are
1.8 V compatible.
-333 -300 -275 -250 -225 -200 Unit
Pipeline
3-1-1-1
t
KQ
tCycle
2.0
3.0
2.2
3.3
2.3
3.6
2.3
4.0
2.5
4.4
2.7
5.0
ns
ns
1.8 V
Curr
(x32/x36)
435 395 360 330 300 270 mA
Rev: 1.00 1/2003
2/19
2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
GS880V37B 100-Pin TQFP Pinout
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
V
DDQ
V
SS
DQ
C4
DQ
C3
V
SS
V
DDQ
DQ
C2
DQ
C1
V
DD
NC
V
SS
DQ
D1
DQ
D2
V
DDQ
V
SS
DQ
D3
DQ
D4
DQ
D5
V
SS
V
DDQ
V
DDQ
V
SS
DQ
B4
DQ
B3
V
SS
V
DDQ
DQ
B2
DQ
B1
V
SS
NC
V
DD
ZZ
DQ
A1
DQ
A2
V
DDQ
V
SS
DQ
A3
DQ
A4
V
SS
V
DDQ
LBO
A
5
A
4
A
3
A
2
A
1
A
0
NC
NC
V
SS
V
DD
NC
A
17
A
10
A
11
A
12
A
13
A
14
A
16
A
6
A
7
E
1
E
2
B
D
B
C
B
B
B
A
E
3
CK
GW
BW
V
DD
V
SS
G
ADSC
ADSP
ADV
A
8
A
9
A
15
256K x 36
Top View
DQ
B5
DQ
B9
DQ
B7
DQ
B8
DQ
B6
DQ
A6
DQ
A5
DQ
A8
DQ
A7
DQ
A9
DQ
C7
DQ
C8
DQ
C6
DQ
D6
DQ
D8
DQ
D7
DQ
D9
DQ
C5
DQ
C9
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
V
DDQ
/DNU
Rev: 1.00 1/2003
3/19
2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
TQFP Pin Description
Symbol
Type
Description
A
0
, A
1
I
Address field LSBs and Address Counter preset Inputs
A
2
A
17
I
Address Inputs
A
18
I
Address Input
DQ
A1
DQ
A9
DQ
B1
DQ
B9
DQ
C1
DQ
C9
DQ
D1
DQ
D98
I/O
Data Input and Output pins
NC
--
No Connect
BW
I
Byte Write--Writes all enabled bytes; active low
B
A
, B
B
I
Byte Write Enable for DQ
A
, DQ
B
Data I/Os; active low
B
C
, B
D
I
Byte Write Enable for DQ
C
, DQ
D
Data I/Os; active low
CK
I
Clock Input Signal; active high
GW
I
Global Write Enable--Writes all bytes; active low
E
1
, E
3
I
Chip Enable; active low
E
2
I
Chip Enable; active high
G
I
Output Enable; active low
ADV
I
Burst address counter advance enable; active low
ADSP, ADSC
I
Address Strobe (Processor, Cache Controller); active low
ZZ
I
Sleep Mode control; active high
LBO
I
Linear Burst Order mode; active low
V
DD
I
Core power supply
V
SS
I
I/O and Core Ground
V
DDQ
I
Output driver power supply
V
DDQ
/DNU
--
V
DDQ
or V
DD
(must be tied high)
or
Do Not Use (must be left floating)
Rev: 1.00 1/2003
4/19
2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
GS880V37B Block Diagram
A1
A0
A0
A1
D0
D1
Q1
Q0
Counter
Load
D
Q
D
Q
Register
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
Regist
er
D
Q
Regist
er
A0
An
LBO
ADV
CK
ADSC
ADSP
GW
BW
E
1
G
ZZ
Power Down
Control
Memory
Array
36
36
4
A
Q
D
E
2
E
3
DQx1
DQx9
1
B
A
B
B
B
C
B
D
1
Rev: 1.00 1/2003
5/19
2002, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS880V37BT-333/300/275/250/225/200
Note:
Thereis a pull-down device on the ZZ pin, so this input pin can be unconnected and the chip will operate in the default states as specified in the
above tables.
Burst Counter Sequences
BPR 1999.05.18
Byte Write Truth Table
Notes:
1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
2. Byte Write Enable inputs B
A
, B
B
, B
C
and/or B
D
may be used in any combination with BW to write single or multiple bytes.
3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
Mode Pin Functions
Mode Name
Pin
Name
State
Function
Burst Order Control
LBO
L
Linear Burst
H
Interleaved Burst
Power Down Control
ZZ
L or NC
Active
H
Standby, I
DD
= I
SB
Function
GW
BW
B
A
B
B
B
C
B
D
Notes
Read
H
H
X
X
X
X
1
Read
H
L
H
H
H
H
1
Write byte a
H
L
L
H
H
H
2, 3
Write byte b
H
L
H
L
H
H
2, 3
Write byte c
H
L
H
H
L
H
2, 3
Write byte d
H
L
H
H
H
L
2, 3
Write all bytes
H
L
L
L
L
L
2, 3
Write all bytes
L
X
X
X
X
X
Linear Burst Sequence
Note: The burst counter wraps to initial state on the 5th clock.
I
nterleaved Burst Sequence
Note: The burst counter wraps to initial state on the 5th clock.
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
PDF 
ZIP