Features
l Low dark current
l High stability
l Red sensitivity extended type
Applications
l Analytical instruments
l Color identification
P H O T O D I O D E
GaAsP photodiode
Red sensitivity extended type
Diffusion type
s
General ratings / Absolute maximum ratings
Absolute maximum ratings
Active area
size
Effective
active
area
Reverse
voltage
V
R
Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *
Package
(mm)
(mm
2
)
(V)
(C)
(C)
G1735
/K
TO-18
1.3 1.3
1.66
G1736
/K
TO-5
2.7 2.7
7.26
G1737
/K
TO-8
5.6 5.6
29.3
G1738
/R
Ceramic
1.3 1.3
1.66
G1740
/R
Ceramic
5.6 5.6
29.3
G3297
/L
TO-18
1.3 1.3
1.66
5
-30 to +80
-40 to +85
s
Electrical and optical characteristics (Typ. Ta=25
C
, unless otherwise noted)
Photo sensitivity
S
(A/W)
Spectral
response
range
Peak
sensitivity
wavelength
p
Short circuit
current
Isc
100 lx
Dark
current
I
D
Max.
Temp.
coefficient
of
I
D
T
CID
Rise time
tr
V
R
=0 V
R
L
=1 k
Terminal
capacitance
Ct
V
R
=0 V
f=10 kHz
Shunt
resistance
Rsh
V
R
=10 mV
NEP
Type No.
(nm)
(nm)
p
GaP
LED
560 nm
He-Ne
laser
633 nm Min.
(A)
Typ.
(A)
V
4
=10 mV
(pA)
V
4
=1 V
(pA) (times/C) (s)
(pF)
Min.
(G)
Typ.
(G) (W/Hz
1/2
)
G1735
0.2 0.25
2
20
0.5
250
5
25 2.0 10
-15
G1736
0.8 1.1
5
50
1.8
1200
2
15 3.2 10
-15
G1737
4
5
10
100
10
4500
1
5
4.5 10
-15
G1738
0.2 0.25
2
20
0.5
250
5
25 2.0 10
-15
G1740
4
5
10
100
10
4500
1
5
4.5 10
-15
G3297
400 to 760 710
0.4
0.22 0.29
1.5 1.8
2
20
1.07
0.5
250
5
25 2.0 10
-15
* Window material K: borosilicate glass, L: lens type borosilicate glass, R: resin coating
GaAsP photodiode
Diffusion type
0
0.1
0.2
0.3
0.4
0.5
200
400
600
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
800
(Typ. Ta=25 C)
WAVELENGTH (nm)
(Typ.)
TEMPERATURE COEFFICIENT (%/
C)
400
200
-0.5
0
+0.5
+1.5
+1.0
600
800
LOAD RESISTANCE (
)
(Typ. Ta=25 C, V
R
=0 V)
RISE TIME
10
3
10
4
10
2
100
ns
1
s
10
ms
1
ms
100
s
10
s
10
5
10
6
G1737, G1740
G1736
G1735, G1738
G3297
REVERSE VOLTAGE (V)
(Typ. Ta=25 C)
DARK CURRENT
0.01
0.1
0.001
100
fA
1
pA
1
nA
100
pA
10
pA
1
10
G1737, G1740
G1735, G1738, G3297
G1736
AMBIENT TEMPERATURE (C)
(Typ. V
R
=10 mV)
SHUNT RESISTANCE
0
20
-20
10 M
1 G
100 M
10 T
1 T
100 G
10 G
40
60
80
G1737, G1740
G1735, G1738, G3297
G1736
INCIDENT LIGHT LEVEL (lx)
(Typ. Ta=25 C, A light source fully illuminated)
OUTPUT CURRENT (A)
10
-14
10
-12
10
-10
10
-8
10
-6
10
-4
10
-2
10
-16
10
-16
10
-12
10
-14
10
0
10
-2
10
-4
10
-6
10
-8
10
-10
10
0
DEPENDENT ON NEP
R
L
=100
s
s
s
s
s
Spectral response
KGPDB0024EA
s
s
s
s
s
Photo sensitivity temperature characteristic
KGPDB0025EA
s
s
s
s
s
Rise time vs. load resistance
KGPDB0026EA
s
s
s
s
s
Dark current vs. reverse voltage
KGPDB0027EA
s
s
s
s
s
Shunt resistance vs. ambient temperature
KGPDB0028EA
s
s
s
s
s
Short circuit current linearity
KGPDB0008EA
GaAsP photodiode
Diffusion type
14
2.4
3.55 0.2
4.7 0.1
5.4 0.2
2.54 0.2
CONNECTED
TO CASE
WINDOW
3.0 0.2
Borosilicate glass window may extend a
maximum of 0.1 mm beyond the upper
surface of the cap.
PHOTOSENSITIVE
SURFACE
0.45
LEAD
20
4.1 0.2
2.9
0.45
LEAD
8.1 0.1
WINDOW
5.9 0.1
PHOTOSENSITIVE
SURFACE
9.1 0.2
5.08 0.2
CONNECTED
TO CASE
Borosilicate glass window may extend a
maximum of 0.2 mm beyond the upper
surface of the cap.
Borosilicate glass window may extend a
maximum of 0.2 mm beyond the upper
surface of the cap.
15
5.0 0.2
1.9
0.45
LEAD
12.35 0.1
13.9 0.2
7.5 0.2
WINDOW
10.5 0.1
PHOTOSENSITIVE
SURFACE
MARK ( 1.4)
CONNECTED
TO CASE
3.0 0.2
14
1.5 0.2
0.6
PHOTOSENSITIVE
SURFACE
0.45
LEAD
5.0 0.2
ACTIVE AREA
CATHODE
TERMINAL MARK 6.0 0.2
G1735
KGPDA0012EA
G1736
KGPDA0013EA
G1737
KGPDA0014EA
G1738
KGPDA0002EA
s
s
s
s
s
Dimensional outlines (unit: mm)
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
GaAsP photodiode
Diffusion type
Cat. No. KGPD1003E01
Apr. 2001 DN
10.1 0.1
8.9 0.1
ACTIVE AREA
2.0 0.1
10.5
0.7
0.3
9.2 0.3
7.4 0.2
8.0 0.3
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
Coating resin may extend a maximum
of 0.1 mm beyond the upper surface
of the package.
PHOTOSENSITIVE
SURFACE
14
4.5 0.2
2.15 0.3
0.45
LEAD
4.65 0.1
5.4 0.2
2.54 0.2
2.4
CONNECTED
TO CASE
G1740
KGPDA0010EA
G3297
KGPDA0009EA
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