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Электронный компонент: G1746

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Features
l Low dark current
l Extended red sensitivity
l High UV sensitivity
Applications
l Analytical instrument
l Color identification
l UV detection
P H O T O D I O D E
GaAsP photodiode
Schottky type with extended red sensitivity
G1746, G1747
s
General ratings / Absolute maximum ratings
Absolute maximum ratings
Active area
size
Effective
active
area
Reverse
voltage
V
R
Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
Material *
Package
(mm)
(mm
2
)
(V)
(C)
(C)
G1746
/Q
TO-5
2.3 2.3
5.2
G1747
/Q
TO-8
4.6 4.6
21
5
-10 to +60
-20 to +70
s
Electrical and optical characteristics (Typ. Ta=25
C
, unless otherwise noted)
Photo sensitivity
S
(A/W)
Spectral
response
range
Peak
sensi-
tivity
wave-
length
p
Short circuit
current
Isc
100 lx
Dark
current
I
D
Max.
Temp.
coefficient
of
I
D
T
CID
Rise time
tr
V
R
=0 V
R
L
=1 k
Terminal
capacitance
Ct
V
R
=0 V
f=10 kHz
Shunt
resistance
Rsh
V
R
=10 mV
NEP
Type No.
(nm) (nm)
p
Hg
line
254 nm
GaP
LED
560 nm
He-Ne
laser
633 nm Min.
(A)
Typ.
(A)
V
4
=10 mV
(pA)
V
4
=1 V
(pA) (times/C) (s)
(pF)
Min.
(G)
Typ.
(G) (W/Hz
1/2
)
G1746
0.5 0.65 10
100
3
1600
1
8
6.5 10
-15
G1747
190 to 760 710 0.22 0.02 0.18 0.2
1.8 2.4
20
200
1.07
12
6000
0.5 2.5 1.2 10
-14
* Window material Q: quartz glass
GaAsP photodiode
G1746, G1747
LOAD RESISTANCE (
)
(Typ. Ta=25 C, V
R
=0 V)
RISE TIME
10
3
10
4
10
2
100
ns
1
s
10
ms
1
ms
100
s
10
s
10
5
10
6
G1747
G1746
REVERSE VOLTAGE (V)
(Typ. Ta=25 C)
DARK CURRENT
0.01
0.1
0.001
100
fA
1
pA
1
nA
100
pA
10
pA
1
10
G1747
G1746
0
0.1
0.05
0.15
0.2
0.25
0.3
190
400
600
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
800
(Typ. Ta=25 C)
-0.5
0
+0.5
+1.0
+1.5
190
400
600
WAVELENGTH (nm)
TEMPERATURE COEFFICIENT
(%/

C)
800
(Typ.)
s
s
s
s
s
Spectral response
KGPDB0039EA
s
s
s
s
s
Photo sensitivity temperature characteristic
KGPDB0040EA
s
s
s
s
s
Rise time vs. load resistance
KGPDB0041EA
s
s
s
s
s
Dark current vs. reverse voltage
KGPDB0042EA
GaAsP photodiode
G1746, G1747
PHOTOSENSITIVE
SURFACE
CONNECTED
TO CASE
20
4.1 0.2
2.9
0.45
LEAD
8.1 0.1
WINDOW
5.9 0.1
9.1 0.2
5.08 0.2
AMBIENT TEMPERATURE (C)
(Typ. V
R
=10 mV)
SHUNT RESISTANCE
0
20
-20
10 M
1 G
100 M
10 T
1 T
100 G
10 G
40
60
80
G1746
G1747
INCIDENT LIGHT LEVEL (lx)
(Typ. Ta=25 C, A light source fully illuminated)
OUTPUT CURRENT (A)
10
-14
10
-12
10
-10
10
-8
10
-6
10
-4
10
-2
10
-16
10
-16
10
-12
10
-14
10
0
10
-2
10
-4
10
-6
10
-8
10
-10
10
0
Refer to NEP value in characteristic table.
R
L
=100
G1746
s
s
s
s
s
Dimensional outlines (unit: mm)
KGPDA0006EA
s
s
s
s
s
Shunt resistance vs. ambient temperature
KGPDB0043EA
s
s
s
s
s
Short circuit current linearity
KGPDB0008EA
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
GaAsP photodiode
G1746, G1747
Cat. No. KGPD1006E01
Apr. 2001 DN
CONNECTED
TO CASE
15
5.0 0.2
1.9
0.45
LEAD
12.35 0.1
13.9 0.2
7.5 0.2
WINDOW
10.5 0.1
MARK ( 1.4)
PHOTOSENSITIVE
SURFACE
G1747
KGPDA0007EA