ChipFind - документация

Электронный компонент: G1963

Скачать:  PDF   ZIP
Features
l Low dark current
l High UV sensitivity
Applications
l Analytical instruments
l UV detection
P H O T O D I O D E
GaP photodiode
Schottky type
G1961, G1962, G1963
s
General ratings / Absolute maximum ratings
Absolute maximum ratings
Active area
size
Effective
active
area
Reverse
voltage
V
R
Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material
Package
(mm)
(mm
2
)
(V)
(C)
(C)
G1961
/Q *
TO-18
1.1 1.1
1.0
G1962
/Q
TO-5
2.3 2.3
5.2
G1963
/Q
TO-8
4.6 4.6
21
5
-10 to +60
-20 to +70
s
Electrical and optical characteristics (Typ. Ta=25
C
, unless otherwise noted)
Photo sensitivity
S
(A/W)
Spectral
response
range
Peak
sensitivity
wavelength
p
Short circuit
current
Isc
lx
Dark
current
I
D
Max.
Temp.
coefficient
of
I
D
T
CID
Rise time
tr
V
R
=0 V
R
L
=1 k
Terminal
capacitance
Ct
V
R
=0 V
f=10 kHz
Shunt
resistance
Rsh
V
R
=10 mV
NEP
Type No.
(nm)
(nm)
p
Hg
line
254 nm
400 nm
Min.
(A)
Typ.
(A)
V
4
=10 mV
(pA)
V
4
=1 V
(pA) (times/C) (s)
(pF)
Min.
(G)
Typ.
(G) (W/Hz
1/2
)
G1961
0.04 0.05 2.5
25
5
400
4
40 5.4 10
-15
G1962
0.23 0.3
5
50
10
1500
2
20 7.6 10
-15
G1963
190 to 550 440
0.12
0.03
0.1
0.75 0.9
10
100
1.11
30
5000
1
1
1.1 10
-14
* Window material Q: quartz glass
GaP photodiode
G1961, G1962, G1963
LOAD RESISTANCE (
)
(Typ. Ta=25 C, V
R
=0 V)
RISE TIME
10
3
10
4
10
2
100
ns
1
s
10
ms
1
ms
100
s
10
s
10
5
10
6
G1963
G1962
G1961
REVERSE VOLTAGE (V)
(Typ. Ta=25 C)
DARK CURRENT
0.01
0.1
0.001
100
fA
1
pA
1
nA
100
pA
10
pA
1
10
G1963
G1962
G1961
0
0.05
0.1
0.15
0.2
190
400
600
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
(Typ. Ta=25 C)
800
-0.5
0
+0.5
+1.0
+1.5
190
400
600
WAVELENGTH (nm)
TEMPERATURE COEFFICIENT (%/

C)
(Typ.)
800
s
s
s
s
s
Spectral response
KGPDB0014EA
s
s
s
s
s
Photo sensitivity temperature characteristic
KGPDB0017EB
s
s
s
s
s
Rise time vs. load resistance
KGPDB0015EA
s
s
s
s
s
Dark current vs. reverse voltage
KGPDB0016EA
GaP photodiode
G1961, G1962, G1963
20
4.1 0.2
2.9
0.45
LEAD
8.1 0.1
WINDOW
5.9 0.1
PHOTOSENSITIVE
SURFACE
9.1 0.2
5.08 0.2
CONNECTED
TO CASE
AMBIENT TEMPERATURE (C)
(Typ. V
R
=10 mV)
SHUNT RESISTANCE
0
+20
-20
10 M
1 G
100 M
10 T
1 T
100 G
10 G
+40
+60
+80
G1961
G1962
G1963
INCIDENT LIGHT LEVEL (lx)
(Typ. Ta=25 C, A light source fully illuminated)
OUTPUT CURRENT (A)
10
-14
10
-12
10
-10
10
-8
10
-6
10
-4
10
-2
10
-16
10
-16
10
-12
10
-14
10
0
10
-2
10
-4
10
-6
10
-8
10
-10
10
0
DEPENDENT ON NEP
R
L
=100
14
2.4
3.55 0.2
4.7 0.1
5.4 0.2
2.54 0.2
WINDOW
3.0 0.2
CONNECTED
TO CASE
PHOTOSENSITIVE
SURFACE
0.45
LEAD
G1961
s
s
s
s
s
Dimensional outlines (unit: mm)
KGPDA0006EA
G1962
s
s
s
s
s
Shunt resistance vs. ambient temperature
KGPDB0018EA
s
s
s
s
s
Short circuit current linearity
KGPDB0008EA
KGPDA0005EA
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
GaP photodiode
G1961, G1962, G1963
Cat. No. KGPD1007E01
Apr. 2001 DN
15
5.0 0.2
1.9
0.45
LEAD
12.35 0.1
13.9 0.2
7.5 0.2
WINDOW
10.5 0.1
PHOTOSENSITIVE
SURFACE
INDEX MARK ( 1.4)
CONNECTED
TO CASE
KGPDA0007EA
G1963