Features
l Low dark current
l High stability
Applications
l Analytical instrument
l Color identification
P H O T O D I O D E
GaAsP photodiode
Photodiode for visible light detection
Diffusion type
s
General ratings / Absolute maximum ratings
Absolute maximum ratings
Active area
size
Effective
active
area
Reverse
voltage
V
R
Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *
Package
(mm)
(mm
2
)
(V)
(C)
(C)
G1115
/K
TO-18
1.3 1.3
1.66
G1116
/K
TO-5
2.7 2.7
7.26
G1117
/K
TO-8
5.6 5.6
29.3
G1118
/R
Ceramic
1.3 1.3
1.66
G1120
/R
Ceramic
5.6 5.6
29.3
G3067
/L
TO-18
1.3 1.3
1.66
G2711-01
/R
Plastic
1.3 1.3
1.66
5
-30 to +80
-40 to +85
s
Electrical and optical characteristics (Typ. Ta=25
C
, unless otherwise noted)
Photo sensitivity
S
(A/W)
Spectral
response
range
Peak
sensitivity
wavelength
p
Short circuit
current
Isc
100 lx
Dark
current
I
D
Max.
Temp.
coefficient
of
I
D
T
CID
Rise time
tr
V
R
=0 V
R
L
=1 k
Terminal
capacitance
Ct
V
R
=0 V
f=10 kHz
Shunt
resistance
Rsh
V
R
=10 mV
NEP
Type No.
(nm)
(nm)
p
GaP
LED
560 nm
He-Ne
laser
633 nm
Min.
(A)
Typ.
(A)
V
4
=10 mV
(pA)
V
4
=1 V
(pA) (times/C) (s)
(pF)
Min.
(G)
Typ.
(G) (W/Hz
1/2
)
G1115
0.12 0.15
1
10
1
300
10
80 1.5 10
-15
G1116
0.45 0.6 2.5
25
4
1400
4
30 2.5 10
-15
G1117
2
2.5
5
50
15
6000
2
15 3.5 10
-15
G1118
0.12 0.15
1
10
1
300
10
80 1.5 10
-15
G1120
2
2.5
5
50
15
6000
2
15 3.5 10
-15
G3067
0.75 0.95
1
10
1
300
10
80 1.5 10
-15
G2711-01
300 to 680 640
0.3
0.29 0.29
0.15 0.18
1
10
1.07
1
300
10
80 1.5 10
-15
* Window material K: borosilicate glass, L: lens type borosilicate glass, R: resin coating
GaAsP photodiode
Diffusion type
0
0.1
0.2
0.3
0.4
0.5
200
400
600
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
800
(Typ. Ta=25 C)
WAVELENGTH (nm)
(Typ.)
TEMPERATURE COEFFICIENT
(%/
C)
400
200
-0.5
0
+0.5
+1.5
+1.0
600
800
LOAD RESISTANCE (
)
(Typ. Ta=25 C, V
R
=0 V)
RISE TIME
10
3
10
4
10
2
100
ns
1
s
10
ms
1
ms
100
s
10
s
10
5
10
6
G1116
G1117, G1120
G1115, G1118
G3067, G2711-01
REVERSE VOLTAGE (V)
(Typ. Ta=25 C)
DARK CURRENT
0.01
0.1
0.001
100
fA
1
pA
1
nA
100
pA
10
pA
1
10
G1116
G1115, G1118
G2711-01, G3067
G1117, G1120
AMBIENT TEMPERATURE (C)
(Typ. V
R
=10 mV)
SHUNT RESISTANCE
0
20
-20
10 M
1 G
100 M
10 T
1 T
100 G
10 G
40
60
80
G1116
G1115, G1118
G3067, G2711-01
G1117, G1120
INCIDENT LIGHT LEVEL (lx)
(Typ. Ta=25 C, A light source fully illuminated)
OUTPUT CURRENT (A)
10
-14
10
-12
10
-10
10
-8
10
-6
10
-4
10
-2
10
-16
10
-16
10
-12
10
-14
10
0
10
-2
10
-4
10
-6
10
-8
10
-10
10
0
Refer to NEP value in characteristic table.
R
L
=100
s
s
s
s
s
Spectral response
KGPDB0019EA
s
s
s
s
s
Photo sensitivity temperature characteristic
KGPDB0020EA
s
s
s
s
s
Rise time vs. load resistance
KGPDB0021EA
s
s
s
s
s
Dark current vs. reverse voltage
KGPDB0022EA
s
s
s
s
s
Shunt resistance vs. ambient temperature
KGPDB0023EA
s
s
s
s
s
Short circuit current linearity
KGPDB0008EA
GaAsP photodiode
Diffusion type
Borosilicate glass window may extend a
maximum of 0.1 mm beyond the upper
surface of the cap.
CONNECTED
TO CASE
PHOTOSENSITIVE
SURFACE
14
2.4
3.55 0.2
4.7 0.1
5.4 0.2
2.54 0.2
WINDOW
3.0 0.2
0.45
LEAD
Borosilicate glass window may extend a
maximum of 0.2 mm beyond the upper
surface of the cap.
PHOTOSENSITIVE
SURFACE
CONNECTED
TO CASE
20
4.1 0.2
2.9
0.45
LEAD
8.1 0.1
WINDOW
5.9 0.1
9.1 0.2
5.08 0.2
PHOTOSENSITIVE
SURFACE
Borosilicate glass window may extend a
maximum of 0.2 mm beyond the upper
surface of the cap.
15
5.0 0.2
1.9
0.45
LEAD
12.35 0.1
13.9 0.2
7.5 0.2
WINDOW
10.5 0.1
MARK ( 1.4)
CONNECTED
TO CASE
3.0 0.2
14
1.5 0.2
0.6
0.45
LEAD
5.0 0.2
ACTIVE AREA
6.0 0.2
CATHODE
TERMINAL MARK
PHOTOSENSITIVE
SURFACE
G1115
s
s
s
s
s
Dimensional outlines (unit: mm)
KGPDA0012EA
G1116
KGPDA0013EA
G1117
KGPDA0014EA
G1118
KGPDA0002EA
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
GaAsP photodiode
Diffusion type
Cat. No. KGPD1002E01
Apr. 2001 DN
ANODE
TERMINAL MARK
Coating resin may extend a maximum
of 0.1 mm beyond the upper surface
of the package.
10.1 0.1
8.9 0.1
ACTIVE AREA
2.0 0.1
10.5
0.65
0.3
9.2 0.3
7.4 0.2
8.0 0.3
0.5
LEAD
PHOTOSENSITIVE
SURFACE
14
4.5 0.2
2.15 0.3
0.45
LEAD
4.65 0.1
5.4 0.2
2.54 0.2
2.4
CONNECTED
TO CASE
4.6 0.2
(INCLUDING BURR)
4.5
5.75 0.2
0.25
5
7.5 5
4.5 0.4
5.6 0.2
(INCLUDING BURR)
5.4
10
5.5
2.54
0.5
0.7
3
2.0
1.0
0.6
3
ANODE
CATHODE
NC
CATHODE
PHOTOSENSITIVE
SURFACE
G1120
KGPDA0008EA
G3067
KGPDA0009EA
G2711-01
KGPDA0003EA
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