ULTRAFAST GaAs MSM PHOTODETECTORS G4176 SERIES
Cat. No. LPRD1014E03
Sep. 1999 T
Printed in Japan (1,000)
ULTRAFAST GaAs
MSM PHOTODETECTORS
G4176 SERIES
FEATURES
Ultrafast response
Low dark current
Large photosensitive area
APPLICATIONS
Optical high speed waveform measurement
Optical communications
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 1999 Hamamatsu Photonics K.K.
http://www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., International Sales Division
325-6, Sunayama-cho, Hamamatsu City, 430-8587, Japan, Telephone: (81)53-452-2141, Fax: (81)53-456-7889
U.S.A.: Hamamatsu Corporation:360 Foothill Road, P.O. BOX 6910, Bridgewater, N.J. 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658, E-mail: info@hamamatsu.de
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33(1) 69 53 71 00, Fax: 33(1) 69 53 71 10, E-mail: france@hamamatsu.com
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: info@hamamatsu.co.uk
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171-41 Solna, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01, E-mail: info@hamamatsu.se
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741, E-mail: info@hamamatsu.it
Figure 1: Optical Pulse Response
(Including time response of light source, bias-tee and oscilloscope)
Figure 2: Spectral Response
Figure 3: Dimensional Outline (Unit: mm)
Ultrafast Response (tr, tf = 30ps
G4176
), Low Dark Current
G4176
G4176-01
G4176-02
The G4176 is a GaAs MSM (Metal-Semiconductor-Metal)
photodetector that achieves ultrafast response times of 30 ps
(rise and fall) and a low dark current of 100 pA (at 25 C).
The photosensitive area of the MSM photodetector is
composed of symmetrical and interdigital Schottky contacts,
and is relatively larger than other ultra fast photodetectors, thus
facilitating coupling with an optical system. So, the MSM
photodetector is ideal as an ultrafast detector for digital signal
transmission in optical communications.
Additionally, both polarities of the bias voltage are available,
and each polarity of the output pulse can be obtained in
response to the applied bias.
The G4176 series consists of various package styles: a coaxial
metal package* facilitating connecting with an SMA connector
(G4176: The bias-tee is necessary), a general purpose TO-18
package (G4176-01), and a small ceramic package (G4176-
02). Fiber-pigtailed or optical connectorised types are also
available for G4176 and G4176-01.
*Japanese Patent No.2070802
Parameter
Maximum Bias Voltage
Maximum Light Input
Pulsed Light
CW to Pulsed Light
Operating Temperature
Storage Temperature
Symbol
V
Bmax
L
max
Topr
Tstg
Unit
V
mW
mW
ABSOLUTE MAXIMUM RATINGSTa=25
Value
10
50
5
-40 to +85
-40 to +100
**Noise Equivalent Power
Condition
Pulse width
1ns
Pulse width
1ns
Parameter
Spectral Response Range
Peak Response Wavelength
Effective Sensitive Area
Chip Size
Package
G4176
G4176-01
G4176-02
Symbol
p
A
Unit
nm
nm
mm
2
mm
2
Value
450 to 870
850
0.2
0.2
1
1
TO-5
(Unified with SMA connector)
TO-18
Ceramic
Condition
V
B
=7V
V
B
=7V
General Characteristics (Ta=25)
Radiant sensitivity
Dark Current
NEP**
G4176
G4176-01
G4176-02
Terminal Capacitance
G4176
G4176-01
G4176-02
Rise Time
G4176
G4176-01
G4176-02
Fall Time
G4176
G4176-01
G4176-02
S
I
D
A/W
pA
Min.
0.2
-
-
-
-
-
-
-
-
-
-
-
-
-
=850nm
ELECTRICAL AND OPTICAL CHARACTERISTICSTa=25, V
B
=7V
Parameter
Symbol
Condition
Value
Unit
Typ.
0.3
100
3
10
-15
4
10
-15
4
10
-15
0.3
0.5
0.8
30
50
40
30
50
40
Max.
-
300
-
-
-
0.4
0.6
1.0
40
80
60
40
80
60
Ct
tr
tf
10 to 90%
10 to 90%
=850nm
W/Hz
1/2
pF
ps
ps
TIME (100 ps/div.)
OUTPUT
(V
B
=7V)
WAVELENGTH (nm)
RADIANT SENSITIVITY (A/W)
10
0
10
--1
10
--2
10
--3
500
300
900
700
600
400
1000
800
(V
B
=7V)
(BOTTOM VIEW)
SENSITIVE
SURFACE
CASE
CHIP
OUTPUT/BIAS*
1/4-36UNS-2B
9.6
2.0
3.0
7.9
10
8.2
2.3
SENSITIVE
SURFACE
12 MIN.
3.6
1.2
(BOTTOM VIEW)
5.4
4.7
BIAS* (/OUTPUT)
CASE
OUTPUT (/BIAS*)
0.45 LEAD
CHIP
*Both polarities of the bias voltage are available.
4.5
0.4
0.1
0.9
2.54
4.5
1.2
1.9
5.4
0.6
1.5MIN.
OUTPUT/BIAS
*
SENSITIVE
SURFACE
CHIP
G4176-02
G4176-01
G4176
ULTRAFAST GaAs MSM PHOTODETECTORS G4176 SERIES
Cat. No. LPRD1014E03
Sep. 1999 T
Printed in Japan (1,000)
ULTRAFAST GaAs
MSM PHOTODETECTORS
G4176 SERIES
FEATURES
Ultrafast response
Low dark current
Large photosensitive area
APPLICATIONS
Optical high speed waveform measurement
Optical communications
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 1999 Hamamatsu Photonics K.K.
http://www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., International Sales Division
325-6, Sunayama-cho, Hamamatsu City, 430-8587, Japan, Telephone: (81)53-452-2141, Fax: (81)53-456-7889
U.S.A.: Hamamatsu Corporation:360 Foothill Road, P.O. BOX 6910, Bridgewater, N.J. 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658, E-mail: info@hamamatsu.de
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33(1) 69 53 71 00, Fax: 33(1) 69 53 71 10, E-mail: france@hamamatsu.com
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: info@hamamatsu.co.uk
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171-41 Solna, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01, E-mail: info@hamamatsu.se
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741, E-mail: info@hamamatsu.it
Figure 1: Optical Pulse Response
(Including time response of light source, bias-tee and oscilloscope)
Figure 2: Spectral Response
Figure 3: Dimensional Outline (Unit: mm)
Ultrafast Response (tr, tf = 30ps
G4176
), Low Dark Current
G4176
G4176-01
G4176-02
The G4176 is a GaAs MSM (Metal-Semiconductor-Metal)
photodetector that achieves ultrafast response times of 30 ps
(rise and fall) and a low dark current of 100 pA (at 25 C).
The photosensitive area of the MSM photodetector is
composed of symmetrical and interdigital Schottky contacts,
and is relatively larger than other ultra fast photodetectors, thus
facilitating coupling with an optical system. So, the MSM
photodetector is ideal as an ultrafast detector for digital signal
transmission in optical communications.
Additionally, both polarities of the bias voltage are available,
and each polarity of the output pulse can be obtained in
response to the applied bias.
The G4176 series consists of various package styles: a coaxial
metal package* facilitating connecting with an SMA connector
(G4176: The bias-tee is necessary), a general purpose TO-18
package (G4176-01), and a small ceramic package (G4176-
02). Fiber-pigtailed or optical connectorised types are also
available for G4176 and G4176-01.
*Japanese Patent No.2070802
Parameter
Maximum Bias Voltage
Maximum Light Input
Pulsed Light
CW to Pulsed Light
Operating Temperature
Storage Temperature
Symbol
V
Bmax
L
max
Topr
Tstg
Unit
V
mW
mW
ABSOLUTE MAXIMUM RATINGSTa=25
Value
10
50
5
-40 to +85
-40 to +100
**Noise Equivalent Power
Condition
Pulse width
1ns
Pulse width
1ns
Parameter
Spectral Response Range
Peak Response Wavelength
Effective Sensitive Area
Chip Size
Package
G4176
G4176-01
G4176-02
Symbol
p
A
Unit
nm
nm
mm
2
mm
2
Value
450 to 870
850
0.2
0.2
1
1
TO-5
(Unified with SMA connector)
TO-18
Ceramic
Condition
V
B
=7V
V
B
=7V
General Characteristics (Ta=25)
Radiant sensitivity
Dark Current
NEP**
G4176
G4176-01
G4176-02
Terminal Capacitance
G4176
G4176-01
G4176-02
Rise Time
G4176
G4176-01
G4176-02
Fall Time
G4176
G4176-01
G4176-02
S
I
D
A/W
pA
Min.
0.2
-
-
-
-
-
-
-
-
-
-
-
-
-
=850nm
ELECTRICAL AND OPTICAL CHARACTERISTICSTa=25, V
B
=7V
Parameter
Symbol
Condition
Value
Unit
Typ.
0.3
100
3
10
-15
4
10
-15
4
10
-15
0.3
0.5
0.8
30
50
40
30
50
40
Max.
-
300
-
-
-
0.4
0.6
1.0
40
80
60
40
80
60
Ct
tr
tf
10 to 90%
10 to 90%
=850nm
W/Hz
1/2
pF
ps
ps
TIME (100 ps/div.)
OUTPUT
(V
B
=7V)
WAVELENGTH (nm)
RADIANT SENSITIVITY (A/W)
10
0
10
--1
10
--2
10
--3
500
300
900
700
600
400
1000
800
(V
B
=7V)
(BOTTOM VIEW)
SENSITIVE
SURFACE
CASE
CHIP
OUTPUT/BIAS*
1/4-36UNS-2B
9.6
2.0
3.0
7.9
10
8.2
2.3
SENSITIVE
SURFACE
12 MIN.
3.6
1.2
(BOTTOM VIEW)
5.4
4.7
BIAS* (/OUTPUT)
CASE
OUTPUT (/BIAS*)
0.45 LEAD
CHIP
*Both polarities of the bias voltage are available.
4.5
0.4
0.1
0.9
2.54
4.5
1.2
1.9
5.4
0.6
1.5MIN.
OUTPUT/BIAS
*
SENSITIVE
SURFACE
CHIP
G4176-02
G4176-01
G4176
PDF 
ZIP