Features
l Low dark current
l Narrow spectral response range
Applications
l Analytical instruments
l UV detection
P H O T O D I O D E
GaAsP photodiode
Short-wavelength type photodiode
Diffusion type
s
General ratings / Absolute maximum ratings
Absolute maximum ratings
Active area
size
Effective
active
area
Reverse
voltage
V
R
Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *
Package
(mm)
(mm
2
)
(V)
(C)
(C)
G5645
/K
TO-18
G5842
Plastic
G6262
Plastic
G7189
/R
Plastic
0.8 0.8
0.58
5
-30 to +80
-40 to +85
s
Electrical and optical characteristics (Typ. Ta=25
C
, unless otherwise noted)
Photo sensitivity
S
(A/W)
Spectral
response
range
Peak
sensitivity
wavelength
p
Short circuit
current
Isc
1000 lx
Dark
current
I
D
V
R
=5 V
Max.
Temp.
coefficient
of
I
D
T
CID
Rise time
tf
V
R
=0 V
R
L
=1 k
Terminal
capacitance
Ct
V
R
=0 V
f=10 kHz
Shunt
resistance
Rsh
V
R
=10 mV
NEP
Type No.
(nm)
(nm)
p
GaP
LED
560 nm
Min.
(nA)
Typ.
(nA)
(pA)
(times/C)
(s)
(pF)
Min.
(G)
Typ.
(G) (W/Hz
1/2
)
G5645
300 to 580 470
0.28
0.05
60
90
2.3 10
-15
G5842
260 to 400 370
0.06
-
-
2
7.6 10
-15
G6262
280 to 580 470
0.2
0.05
45
65
2.3 10
-15
G7189
300 to 580 470
0.25
0.02
45
65
50
1.07
3
80
10
80
2.3 10
-15
* Window material K: borosilicate glass, R: resin coating
GaAsP photodiode
Diffusion type
0
0.1
0.2
0.3
0.4
0.5
200
400
600
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
800
(Typ. Ta=25 C)
G5645
G7189
G6262
0
0.02
0.04
0.06
0.08
0.1
200
300
400
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
500
(Typ. Ta=25 C)
G5842
WAVELENGTH (nm)
(Typ.)
TEMPERATURE COEFFICIENT
(%/
C)
400
200
-0.5
0
+0.5
+3.0
+2.5
+2.0
+1.5
+1.0
600
800
LOAD RESISTANCE (
)
(Typ. Ta=25 C, V
R
=0 V)
RISE TIME
10
3
10
4
10
2
100
ns
1
s
10
ms
1
ms
100
s
10
s
10
5
10
6
REVERSE VOLTAGE (V)
(Typ. Ta=25 C, V
R
=0 V)
DARK CURRENT
0.01
0.1
0.001
100
fA
1
pA
100
pA
10
pA
1
10
AMBIENT TEMPERATURE (C)
(Typ. V
R
=10 mV)
SHUNT RESISTANCE
0
20
-20
10 M
1 G
100 M
10 T
1 T
100 G
10 G
40
60
80
s
s
s
s
s
Spectral response
KGPDB0029EA
KGPDB0001EC
s
s
s
s
s
Photo sensitivity temperature characteristic
KGPDB0030EA
s
s
s
s
s
Rise time vs. load resistance
KGPDB0031EA
s
s
s
s
s
Dark current vs. reverse voltage
KGPDB0032EA
s
s
s
s
s
Shunt resistance vs. ambient temperature
KGPDB0033EA
GaAsP photodiode
Diffusion type
INCIDENT LIGHT LEVEL (lx)
(Typ. Ta=25 C, A light source fully illuminated)
OUTPUT CURRENT (A)
10
-14
10
-12
10
-10
10
-8
10
-6
10
-4
10
-2
10
-16
10
-16
10
-12
10
-14
10
0
10
-2
10
-4
10
-6
10
-8
10
-10
10
0
Refer to NEP value in characteristic table.
R
L
=100
Borosilicate glass window may extend
a maximum of 0.1 mm beyond the upper
surface of the cap.
CONNECTED
TO CASE
14
2.4
3.55 0.2
4.7 0.1
5.4 0.2
2.54 0.2
WINDOW
3.0 0.2
0.45
LEAD
(3.4)
6.5
0.2
1.25
0.25
1.25
0.25
2.54
ACTIVE AREA
(3 ) 0.5
4.0
4.0
0.65
0.1
+
0.2
-
0.1
0.85
0.2
3.2
(FILTER)
4.0
4.0
4.0
3.2
(FIL
TER)
1.5
N/C
CATHODE
ANODE
PHOTOSENSITIVE
SURFACE
s
s
s
s
s
Short circuit current linearity
KGPDB0008EA
G5645
s
s
s
s
s
Dimensional outlines (unit: mm)
KGPDA0012EA
G5842, G6262
KGPDA0004EA
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
GaAsP photodiode
Diffusion type
Cat. No. KGPD1004E01
Apr. 2001 DN
4.6 0.2
(INCLUDING BURR)
4.5
5.75 0.2
0.25
5
7.5 5
4.5 0.4
5.6 0.2
(INCLUDING BURR)
5.4
10
5.5
2.54
0.5
0.7
3
2.0
1.0
0.6
3
ANODE
CATHODE
NC
CATHODE
PHOTOSENSITIVE
SURFACE
G7189
KGPDA0003EA
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