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Электронный компонент: G5851-21

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P H O T O D I O D E
InGaAs PIN photodiode
Long wavelength type
G8421/G8371/G5851 series
Features
l Long cut-off wavelength: 1.9 m
l 3-pin TO-18 package: low price
l Thermoelectrically cooled TO-18 package: low dark current
l Active area: 0.3 to 3 mm
Applications
l Optical power meter
l Gas analyzer
l NIR (near infrared) photometry
I Specifications / Absolute maximum ratings
Absolute maximum ratings
Active
area
Thermistor
power
dissipation
TE-cooler
allowable
current
Reverse
voltage
V
R
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material
Package
Cooling
(mm)
(mW)
(A)
(V)
(C)
(C)
G8421-03
f0.3
G8421-05
f0.5
G8371-01
TO-18
f1
G8371-03
TO-5
Non-cooled
f3
-
-
-40 to +85 -55 to +125
G5851-103
f0.3
G5851-11
f1
G5851-13
TO-8
One-stage
TE-cooled
f3
1.5
G5851-203
f0.3
G5851-21
f1
G5851-23
TO-8
Two-stage
TE-cooled
f3
0.2
1.0
2
-40 to +70
-55 to +85
I Electrical and optical characteristics (Typ. unless otherwise noted)
Measurement
Condition
Element
temperature
Spectral
response
range
l
Peak
sensitivity
wavelength
lp
Photo
sensitivity
S
l=lp
Dark current
I
D
V
R
=1 V
Cut-off
frequency
fc
V
R
=1 V
R
L
=50 W
Terminal
capacitance
Ct
V
R
=1 V
f=1 MHz
Shunt
resistance
Rsh
V
4
=10 mV
D*
l=lp
NEP
l=lp
Type No.
(C)
(m)
(m)
(A/W)
Typ.
(nA)
Max.
(nA)
-3 dB
(MHz)
(pF)
(MW)
(cmHz
1/2
/W) (W/Hz
1/2
)
G8421-03
30
300
100
8
1.5
9 10
-14
G8421-05
50
500
80
20
1
1.5 10
-13
G8371-01
100
1000
40
80
0.5
2 10
-13
G8371-03
25
0.9 to 1.9
2000 20000
3
800
0.05
5 10
11
8 10
-13
G5851-103
3
30
100
8
15
3 10
-14
G5851-11
10
100
40
80
5
6 10
-14
G5851-13
-10
0.9 to 1.87
200
2000
3
800
0.5
1.5 10
12
2 10
-13
G5851-203
1.5
15
100
8
35
2 10
-14
G5851-21
5
50
40
80
10
4 10
-14
G5851-23
-20
0.9 to 1.85
1.75
1.1
100
1000
3
800
1
2.5 10
12
1.5 10
-13
1
InGaAs PIN photodiode
G8421/G8371/G5851 series
WAVELENGTH (m)
(Typ.)
PHOTO SENSITIVITY (A/W)
1.4
1.2
1.0
0.8
0
0.2
0.4
1.4
1.2
1.0
0.8
0.6
1.6
1.8
2.2
2.0
T= -10 C
T= -20 C
T=25 C
1
0.8
1.6
2
2.2
2.6
WAVELENGTH (m)
TEMPERATURE COEFFICIENT (%/

C)
-1
(Typ.)
1.2
1.4
1.8
2.4
0
1
2
0.01
0.1
1
10
REVERSE VOLTAGE (V)
DARK CURRENT
1 nA
10 nA
100 nA
1
A
10
A
(Typ. Ta=25 C)
G8371-03
G8371-01
G8421-03
G8421-05
0.01
0.1
1
10
REVERSE VOLTAGE (V)
DARK CURRENT
100 pA
(Typ.)
1 nA
10 nA
100 nA
1
A
G5851-13 (T= -10 C)
G5851-23 (T= -20 C)
G5851-11 (T= -10 C)
G5851-103 (T= -10 C)
G5851-203 (T= -20 C)
G5851-21
(T= -20 C)
0.1
1
10
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
1 pF
(Typ. Ta=25 C, f=1 MHz)
100 pF
10 nF
10 pF
1 nF
G8371-03
G5851-13/-23
G8371-01
G5851-11/-21
G8421-05
G8421-03
G5851-103/-203
1 M
-40
-20
0
40
60
SHUNT RESISTANCE
100 k
1 k
100
10 k
10 M
(Typ. V
R
=10 mV)
20
80
90
100
ELEMENT TEMPERATURE (C)
G8371-03
G5851-13/-23
G8421-05
G8421-03
G5851-103/-203
G8371-01
G5851-11/-21
I Spectral response
KIRDB0221EA
I Photo sensitivity temperature characteristic
KIRDB0208EA
I Dark current vs. reverse voltage
I Terminal capacitance vs. reverse voltage
KIRDB0233EA
I Shunt resistance vs. element temperature
KIRDB0234EA
Non-cooled type
TE-cooled type
KIRDB0232E
B KIRDB0223EA
2
InGaAs PIN photodiode
G8421/G8371/G5851 series
3
ELEMENT TEMPERATURE (C)
RESISTANCE (
)
10
3
(Typ.)
10
4
10
5
10
6
-40
-20
0
20
20
0
0.4
0.8
1.2
1.6
CURRENT (A)
ELEMENT TEMPERATURE (

C)
0
-40
-60
-20
40
(Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W)
ONE-STAGE
TE-COOLED TYPE
TWO-STAGE
TE-COOLED TYPE
1.2
0
0.5
1.0
1.5
VOLTAGE (V)
CURRENT (A)
1.0
0.6
0
0.8
1.4
1.6
(Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W)
0.4
0.2
ONE-STAGE
TE-COOLED TYPE
TWO-STAGE
TE-COOLED TYPE
I Thermistor temperature characteristic
KIRDB0116EA
I Cooling characteristics of TE-cooler
KIRDB0231EA
I Current vs. voltage characteristics of TE-cooler
KIRDB0115EA
InGaAs PIN photodiode
G8421/G8371/G5851 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 200
3 Hamamatsu Photonics K.K.
Cat. No. KIRD1046E02
Jan.2003 DN
4
DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
WINDOW
10 0.2
14 0.2
15.3 0.2
4.4 0.2
6.4 0.2
12 MIN.
0.45
LEAD
10.2 0.2
5.1 0.2
5.1 0.2
PHOTOSENSITIVE
SURFACE
WINDOW
3.0 0.1
4.7 0.1
2.7 0.2
3.6 0.2
13 MIN.
5.4 0.2
0.45
LEAD
CASE
2.5 0.2
PHOTOSENSITIVE
SURFACE
WINDOW
5.9 0.1
2.5 0.2
0.15 MAX.
0.4 MAX.
8.1 0.1
9.2 0.2
4.2 0.2
18 MIN.
0.45
LEAD
CASE
5.1 0.3
1.5 MAX.
PHOTOSENSITIVE
SURFACE
DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
WINDOW
10 0.2
14 0.2
15.3 0.2
6.7 0.2
10 0.2
12 MIN.
10.2 0.2
5.1 0.2
5.1 0.2
0.45
LEAD
PHOTOSENSITIVE
SURFACE
I Dimensional outlines (unit: mm)
KIRDA0150EA
KIRDA0151EA
KIRDA0029EB
G8421-03/-05, G8371-01
G8371-03
G5851-103/-11/-13
G5851-203/-21/-23
KIRDA0031EB