ChipFind - документация

Электронный компонент: G5852-103

Скачать:  PDF   ZIP
P H O T O D I O D E
InGaAs PIN photodiode
Long wavelength type (up to 2.1 m)
G8422/G8372/G5852 series
Features
l
Cut-off wavelength: 2.1 m
l
3-pin TO-18 package: low price
l
TE-cooled type TO-8 package: low dark current
l
Active area:
B
0.3 to
B
3 mm
Applications
l
Gas analyzer
l
Water content analyzer
l
NIR (Near Infrared) photometry
s Specifications / Absolute maximum ratings
Absolute maximum ratings
Active
area
Thermistor
power
dissipation
TE-cooler
allowable
current
Reverse
voltage
V
R
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
D im e nsiona l
outline
Package
Cooling
(mm)
(mW)
(A)
(V)
(C)
(C)
G8422-03
0.3
G8422-05
0.5
G8372-01
TO-18
1
G8372-03
TO-5
Non-cooled
3
-
-
-40 to +85
-55 to +125
G5852-103
0.3
G5852-11
1
G5852-13
TO-8
One-stage
TE-cooled
3
1.5
G5852-203
0.3
G5852-21
1
G5852-23
TO-8
Two-stage
TE-cooled
3
0.2
1.0
2
-40 to +70
-55 to +85
s Electrical and optical characteristics (Typ. unless otherwise noted)
M ea sure m ent
condition
Element
Te m pe ra tu re
T
Spectral
response
range
Peak
s e n s itiv ity
w a v e le n g th
p
Photo
sensitivity
S
=
p
Dark current
I
D
V
R
=1 V
Cut-off
fre q u e n c y
fc
V
R
=1 V
R
L
=50
Terminal
capacitance
Ct
V
R
=1 V
f=1 MHz
Shunt
re s is ta n c e
Rsh
V
R
= 1 0 m V
D
=
p
NEP
=
p
Type No.
(C)
(m)
(m)
(A/W)
Typ.
(nA)
Max.
(nA)
(MHz)
(pF)
(M
)
(cm H z
1/2
/W ) (W/Hz
1/2
)
G8422-03
55
550
100
8
0.9
1.5 10
-13
G8422-05
125
1250
80
20
0.3
2.5 10
-13
G8372-01
500
5000
40
80
0.1
4 10
-13
G8372-03
25
0.9 to 2.1
5 (A) 50 (A)
3
800
0.01
2.5 10
11
1.5 10
-12
G5852-103
5.5
55
100
8
9
5 10
-14
G5852-11
50
500
40
80
1
1 10
-13
G5852-13
-10
0.9 to 2.07
500
5000
3
800
0.1
8 10
11
4 10
-13
G5852-203
3
30
100
8
18
3 10
-14
G5852-21
25
250
40
80
2
8 10
-14
G5852-23
-20
0.9 to 2.05
1.95
1.2
250
2500
3
800
0.2
1.2 10
12
3 10
-13
1
InGaAs PIN photodiode
G8422/G8372/G5852 series
WAVELENGTH (m)
(Typ.)
PHOTO SENSITIVITY
(A/W)
1.4
1.2
1.0
0.8
0
0.2
0.4
1.4
1.2
1.0
0.8
0.6
1.6
1.8
2.2
2.0
2.4
T= -10 C
T= -20 C
T=25 C
1
0.8
1.6
2
2.2
2.6
WAVELENGTH (m)
TEMPERATURE COEFFICIENT
(%/

C)
-1
(Typ.)
1.2
1.4
1.8
2.4
0
1
2
G8372-03
G8372-01
G8422-05
G8422-03
10
A
0.01
0.1
1
10
REVERSE VOLTAGE (V)
DARK CURRENT
1
A
10 pA
100 nA
100
A
(Typ. Ta=25
C)
100 nA
0.01
0.1
1
10
REVERSE VOLTAGE (V)
DARK CURRENT
10 nA
100 pA
1 nA
1
A
(Typ.)
G5852-13 (T= -10 C)
G5852-23 (T= -20 C)
G5852-11 (T= -10 C)
G5852-21 (T= -20 C)
G5852-103 (T= -10 C)
G5852-203 (T= -20 C)
1 nF
0.01
0.1
1
10
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
100 pF
1 pF
10 pF
10 nF
(Typ. Ta=25 C, f=1 MHz)
G8372-03
G5852-13/-23
G8372-01
G5852-11/-21
G8422-03
G5852-103/-203
G8422-05
1 M
-40
-20
0
20
40
60
80
90
100
ELEMENT TEMPERATURE (C)
100 k
10 k
100
1 k
10 M
(Typ. V
R
=10 mV)
G8422-03
G5852-103/-203
G8422-05
G8372-01
G5852-11/-21
G8372-03
G5852-13/-23
SHUNT RESISTANCE
s
Spectral response
KIRDB0226EA
s
Photo sensitivity temperature characteristic
KIRDB0207EA
s
Dark current vs. reverse voltage
KIRDB0235EA
KIRDB0228EA
s
Terminal capacitance vs. reverse voltage
KIRDB0236EA
s
Shunt resistance vs. element temperature
KIRDB0237EA
Non-cooled type
TE-cooled type
2
InGaAs PIN photodiode
G8422/G8372/G5852 series
ELEMENT TEMPERATURE (C)
RESISTANCE (
)
10
3
(Typ.)
10
4
10
5
10
6
-40
-20
0
20
20
0
0.4
0.8
1.2
1.6
CURRENT (A)
ELEMENT TEMPERATURE
(

C)
0
-40
-60
-20
40
(Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W)
ONE-STAGE
TE-COOLED TYPE
TWO-STAGE
TE-COOLED TYPE
1.2
0
0.5
1.0
1.5
VOLTAGE (V)
CURRENT (A)
1.0
0.6
0
0.8
1.4
1.6
(Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W)
0.4
0.2
TWO-STAGE
TE-COOLED TYPE
ONE-STAGE
TE-COOLED TYPE
s
Thermistor temperature characteristic
KIRDB0116EA
s
Cooling characteristics of TE-cooler
KIRDB0231EA
s
Current vs. voltage characteristics of TE-cooler
KIRDB0115EA
3
InGaAs PIN photodiode
G8422/G8372/G5852 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Cat. No. KIRD1047E02
Sep. 2001 DN
DETECTOR ELEMENT (ANODE)
DETECTOR ELEMENT (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
WINDOW
10 0.2
14 0.2
15.3 0.2
4.4 0.2
6.4 0.2
12 MIN.
0.45
LEAD
10.2 0.2
5.1 0.2
5.1 0.2
PHOTOSENSITIVE
SURFACE
WINDOW
3.0 0.1
4.7 0.1
2.7 0.2
3.6 0.2
13 MIN.
5.4 0.2
0.45
LEAD
CASE
2.5 0.2
PHOTOSENSITIVE
SURFACE
WINDOW
5.9 0.1
2.5 0.2
0.15 MAX.
0.4 MAX.
8.1 0.1
9.2 0.2
4.2 0.2
18 MIN.
0.45
LEAD
CASE
5.1 0.3
1.5 MAX.
PHOTOSENSITIVE
SURFACE
DETECTOR ELEMENT (ANODE)
DETECTOR ELEMENT (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
WINDOW
10 0.2
14 0.2
15.3 0.2
6.7 0.2
10 0.2
12 MIN.
10.2 0.2
5.1 0.2
5.1 0.2
0.45
LEAD
PHOTOSENSITIVE
SURFACE
s
Dimensional outline (unit: mm)
KIRDA0150EA
KIRDA0151EA
KIRDA0029EB
G8422-03/-05, G8372-01
G8372-03
KIRDA0031EB
G5852-203/-21/-23
G5852-103/-11/-13
4