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Электронный компонент: G5853-23

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P H O T O D I O D E
InGaAs PIN photodiode
Long wavelength type (up to 2.6 m)
G8423/G8373/G5853 series
Features
l
Long cut-off wavelength: 2.6 m
l
3-pin TO-18 package: low price
l
Thermoelectrically cooled TO-8 package: low dark current
l
Active area:
0.3 to
3 mm
Applications
l
Gas analysis
l
Spectrophotometer
l
NIR (near infrared) photometry
1
s Specifications / Absolute maximum ratings
Absolute maximum ratings
Active
area
Thermistor
power
dissipation
TE-cooler
allowable
current
Reverse
voltage
V
R
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
D im en siona l
outline
Package
Cooling
(mm)
(mW)
(A)
(V)
(C)
(C)
G8423-03
0.3
G8423-05
0.5
G8373-01
TO-18
1
G8373-03
TO-5
Non-cooled
3
-
-
-40 to +85
-55 to +125
G5853-103
0.3
G5853-11
1
G5853-13
TO-8
One-stage
TE-cooled
3
1.5
G5853-203
0.3
G5853-21
1
G5853-23
TO-8
Two-stage
TE-cooled
3
0.2
1.0
2
-40 to +70
-55 to +85
s Electrical and optical characteristics (Typ. unless otherwise noted)
M e asure m e nt
condition
Element
te m pe rature
Spectral
response
range
Peak
se n s itiv ity
w a ve le n g th
p
Photo
sensitivity
S
=
p
Dark current
I
D
V
R
=1 V
Cut-off
fre q u e n c y
fc
V
R
=1 V
R
L
=50
Terminal
capacitance
Ct
V
R
=1 V
f=1 MHz
Shunt
re sis ta n c e
Rsh
V
R
= 1 0 m V
D
=
p
NEP
=
p
Type No.
(C)
(m)
(m)
(A/W)
Typ.
(A)
Max.
(A)
-3 dB
(MHz)
(pF)
(k
)
(cm H z
1/2
/W ) (W/Hz
1/2
)
G8423-03
2
20
60
40
30
7 10
-13
G8423-05
5
50
50
60
15
1 10
-12
G8373-01
15
75
15
200
3
2 10
-12
G8373-03
25
1.2 to 2.6
150
1500
1.5
1800
0.3
5 10
10
8 10
-12
G5853-103
0.2
2
60
40
300
3 10
-13
G5853-11
1.5
7.5
15
200
30
7 10
-13
G5853-13
-10
1.2 to 2.57
15
150
1.5
1800
3
1 10
11
2 10
-12
G5853-203
0.1
1
60
40
600
2 10
-13
G5853-21
0.8
4
15
200
60
5 10
-13
G5853-23
-20
1.2 to 2.55
2.3
1.1
7.5
75
1.5
1800
6
2 10
11
1.8 10
-12
InGaAs PIN photodiode
G8423/G8373/G5853 series
2
WAVELENGTH (m)
(Typ.)
PHOTO SENSITIVITY (A/W)
1.4
1.2
1.0
0.8
0
0.2
0.4
1.4
1.2
1.0
0.8
0.6
1.6
1.8 2.0
2.4
2.6
2.2
2.8
T= -10 C
T= -20 C
T=25 C
G8373-03
G8373-01
G8423-03
G8423-05
100
A
0.01
0.1
1
10
REVERSE VOLTAGE (V)
DARK CURRENT
10
A
100 nA
1
A
1 mA
(Typ. Ta=25
C)
10
A
0.01
0.1
1
10
REVERSE VOLTAGE (V)
DARK CURRENT
1
A
10 nA
100 nA
100
A
(Typ.)
G5853-23 (T= -20 C)
G5853-11 (T= -10 C)
G5853-21 (T= -20 C)
G5853-103 (T= -10 C)
G5853-203 (T= -20 C)
G5853-13 (T= -10 C)
1 nF
0.1
1
10
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
100 pF
10 pF
10 nF
(Typ. Ta=25 C, f=1 MHz)
G8373-03
G5853-13/-23
G8423-05
G8373-01
G5853-11/-21
G8423-03
G5853-103/-203
100 k
-40
-20
0
20
40
60
80
90
100
ELEMENT TEMPERATURE (C)
SHUNT RESISTANCE
10 k
1 k
10
100
1 M
(Typ. V
R
=10 mV)
G8423-03
G5853-103/-203
G8423-05
G8373-01
G5853-11/-21
G8373-03
G5853-13/-23
1
0.8
1.6
2
2.2
2.6
WAVELENGTH (m)
TEMPERATURE COEFFICIENT (%/

C)
-1
(Typ.)
1.2
1.4
1.8
2.4
0
1
2
s
Spectral response
KIRDB0216EA
s
Photo sensitivity temperature characteristic
KIRDB0206EA
s
Dark current vs. reverse voltage
KIRDB0238EA
KIRDB0218EA
s
Terminal capacitance vs. reverse voltage
KIRDB0239EA
s
Shunt resistance vs. element temperature
KIRDB0240EA
Non-cooled type
TE-cooled type
InGaAs PIN photodiode
G8423/G8373/G5853 series
3
ELEMENT TEMPERATURE (C)
RESISTANCE (
)
10
3
(Typ.)
10
4
10
5
10
6
-40
-20
0
20
20
0
0.4
0.8
1.2
1.6
CURRENT (A)
ELEMENT TEMPERATURE (

C)
0
-40
-60
-20
40
(Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W)
ONE-STAGE
TE-COOLED TYPE
TWO-STAGE
TE-COOLED TYPE
1.2
0
0.5
1.0
1.5
VOLTAGE (V)
CURRENT (A)
1.0
0.6
0
0.8
1.4
1.6
(Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W)
0.4
0.2
ONE-STAGE
TE-COOLED TYPE
TWO-STAGE
TE-COOLED TYPE
s
Thermistor temperature characteristic
KIRDB0116EA
s
Cooling characteristics of TE-cooler
KIRDB0231EA
s
Current vs. voltage characteristics of TE-cooler
KIRDB0115EA
InGaAs PIN photodiode
G8423/G8373/G5853 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Cat. No. KIRD1048E01
Apr. 2001 DN
4
DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
WINDOW
10 0.2
14 0.2
15.3 0.2
4.4 0.2
6.4 0.2
12 MIN.
0.45
LEAD
10.2 0.2
5.1 0.2
5.1 0.2
PHOTOSENSITIVE
SURFACE
DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
WINDOW
10 0.2
14 0.2
15.3 0.2
6.7 0.2
10 0.2
12 MIN.
10.2 0.2
5.1 0.2
5.1 0.2
0.45
LEAD
PHOTOSENSITIVE
SURFACE
WINDOW
3.0 0.1
4.7 0.1
2.7 0.2
3.6 0.2
13 MIN.
5.4 0.2
0.45
LEAD
CASE
2.5 0.2
PHOTOSENSITIVE
SURFACE
WINDOW
5.9 0.1
2.5 0.2
0.15 MAX.
0.4 MAX.
8.1 0.1
9.2 0.2
4.2 0.2
18 MIN.
0.45
LEAD
CASE
5.1 0.3
1.5 MAX.
PHOTOSENSITIVE
SURFACE
s
Dimensional outlines (unit: mm)
KIRDA0150EA
KIRDA0151EA
KIRDA0031EB
KIRDA0029EB
G8423-03/-05, G8373-01
G8373-03
G5853-103/-11/-13
G5853-203/-21/-23