P H O T O D I O D E
InGaAs PIN photodiode
Large active areas from
1 to
5 mm
G8370 series
Features
l
Low noise, low dark current
l
Large active area
l
Various active area sizes available
Applications
l
Laser monitor
l
Optical power meter
l
Laser diode life test
InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes
with active areas from
1 to
5 mm.
s Specifications / Absolute maximum ratings
Absolute maximum ratings
Active area
Reverse
voltage
V
R
Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *
1
Package
(mm)
(V)
(C)
(C)
G8370-01
/K
TO-18
1
10
G8370-02
2
G8370-03
/K
TO-5
3
5
G8370-05
/K
TO-8
5
2
-40 to +85
-55 to +125
s Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted)
Spectral
response
range
Peak
sensitivity
wavelength
p
Photo
sensitivity
S
Dark
current
I
D
V
R
=1 V
Cut-off
frequency
fc
V
R
=1 V
R
L
=50
-3 dB
Terminal
capacitance
Ct
V
R
=1 V
f=1 MHz
Shunt
resistance
Rsh
V
R
=10 mV
D
=
p
NEP
=
p
Type No.
(m)
(m)
1.3 m
(A/W)
=
p
(A/W)
Typ.
(nA)
Max.
(nA)
(MHz)
(pF)
(M
)
(cm H z
1 /2
/W)
(W/Hz
1/2
)
G8370-01
1 *
2
5 *
2
35 *
2
90 *
2
100
2 10
-14
G8370-02
5
25
4
550
25
4 10
-14
G8370-03
15
75
2
1000
10
6 10
-14
G8370-05
0.9 to 1.7
1.55
0.9
0.95
25
125
0.6
3500
3
5 10
12
1 10
-13
*1: Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 m peak)
*2: V
R
=5 V
1
InGaAs PIN photodiode
G8370 series
s
Spectral response
s
Photo sensitivity temperature characteristic
s
Photo sensitivity linearity
s
Dark current vs. reverse voltage
WAVELENGTH (m)
PHOTO SENSITIVITY (A/W)
2.0
0.5
(Typ. Ta=25 C)
0.8
1.0
1.2
1.4
1.6
1.8
1
0.6
WAVELENGTH (m)
TEMPERATURE COEFFICIENT (%/
C)
(Typ. Ta=25
C
)
1.0
1.2
1.4
1.6
1.8
0.8
0
1
-1
2
98
0
2
6
10
12
16
INCIDENT LIGHT LEVEL (mW)
RELATIVE SENSITIVITY (%)
96
92
90
94
100
102
(Typ. Ta=25 C,
=1.3
m, R
L
=2
, V
R
=0 V)
4
8
14
G8370-01
G8370-02
G8370-03
G8370-05
100 nA
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
DARK CURRENT
10 nA
100 pA
10 pA
1 nA
1
A
(Typ. Ta=25
C
)
G8370-05
G8370-02
G8370-03
G8370-01
KIRDB0245EA
KIRDB0246EA
KIRDB0002EB
KIRDB0042EA
2
InGaAs PIN photodiode
G8370 series
s
Dimensional outlines (unit: mm)
s
Terminal capacitance vs. reverse voltage
KIRDB0247EA
s
Shunt resistance vs. ambient temperature
KIRDB0248EA
KIRDA0154EC
G8370-02/-03
G8370-01
1 nF
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
100 pF
1 pF
10 pF
10 nF
(Typ. Ta=25
C
, f=1 MHz)
G8370-05
G8370-03
G8370-02
G8370-01
1 G
-40
-20
0
40
60
80
100
AMBIENT TEMPERATURE (C)
SHUNT RESISTANCE
100 M
1 M
100 k
10 M
10 G
(Typ. V
R
=10 mV)
20
G8370-03
G8370-02
G8370-01
G8370-05
KIRDA0155EB
WINDOW
2.2 MIN.
4.7 0.1
2.7
0.2
3.7
0.2
13 MIN.
5.4 0.2
0.45
LEAD
CASE
2.5 0.2
PHOTOSENSITIVE
SURFACE
WINDOW
4.5 MIN.
2.5 0.2
0.4 MAX.
8.3 0.1
9.2 0.2
4.9 0.2
18 MIN.
0.45
LEAD
CASE
5.1 0.3
1.5 MAX.
PHOTOSENSITIVE
SURFACE
3
InGaAs PIN photodiode
G8370 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Cat. No. KIRD1050E03
Feb. 2002 DN
G8370-05
0.45
LEAD
1.0
WINDOW
7.0 MIN.
12.4 0.1
13.8 0.2
7.5 0.2
INDEX MARK
2.8 0.2
0.5
4.9 0.2
14 MIN.
CASE
PHOTOSENSITIVE
SURFACE
KIRDA0052EC
4
PDF 
ZIP