Features
l Large active area: 10 mm
l High sensitivity: 0.95 A/W Typ. (=1.55 m)
l Low dark current
l Low PDL: 5 mdB Typ., 10 mdB Max.
l Photo response non-uniformity: 2 % Typ.
Applications
l LD power monitor
l LD aging equipment
P H O T O D I O D E
InGaAs PIN photodiode
Ceramic package with large active area (
10 mm)
G8370-10
PRELIMINARY DATA
Jan. 2003
1
I General / Absolute maximum ratings
Parameter
Symbol
Value
Unit
Active area
-
f10
mm
Reverse voltage
V
R
Max.
1
V
Operating temperature
Topr.
-25 to +70 *
C
Storage temperature
Tstg.
-25 to +70 *
C
* No condensation
I Electrical and optical characteristics (Ta=25 C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
l
-
0.9 to 1.7
-
m
Peak sensitivity wavelength
lp
-
1.55
-
m
l=1.3 m
0.8
0.85
-
A/W
Photo sensitivity
S
l=lp
0.85
0.95
-
A/W
Dark current
I
D
V
R
=10 mV
-
0.2
2
A
Shunt resistance
Rsh
V
R
=10 mV
5
50
-
kW
Terminal capacitance
Ct
V
R
=0 V, f=1 MHz
-
20
-
nF
Cut-off frequency
fc
V
R
=0 V, R
L
=50 W
-
100
-
kHz
Noise equivalent power
NEP
l=lp
-
6 10
-13
-
W/Hz
1/2
Detectivity
D*
l=lp
-
1.5 10
12
-
cmHz
1/2
/W
Photo response non-uniformity
PRNU
80 % of active area
-
2
-
%
PDL
-
V
R
=0 V, l=1.55 m
-
5
10
mdB
InGaAs PIN photodiode
G8370-10
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Cat. No. KIRD1058E01
Jan. 2003 DN
(Typ. Ta=25 C)
0.8
1.0
1.4
1.6
1.8
WAVELENGTH (m)
PHOTO SENSITIVITY (A/W)
1.0
0.8
0.6
0.4
0.2
0
1.2
1.2
KIRDA0167EA
I Dimensional outline (unit: mm)
I Spectral response
I Dark current vs. reverse voltage
I Terminal capacitance vs. reverse voltage
KIRDB0284EA
2
0.01
0.1
10
REVERSE VOLTAGE (V)
DARK CURRENT
1
(Typ. Ta=25 C)
1 nA
10 A
1 A
100 nA
10 nA
KIRDB0285EA
(Typ. Ta=25 C)
0.01
10
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE (nF)
1
100
10
0.1
1
KIRDB0286EA
16.5 0.2
12.5 0.2
15.0 0.2
0.1
0.3 0.1
1.3 0.1
2.2 0.1
10.5
13.7 0.3
ACTIVE AREA 10
PHOTOSENSITIVE
SURFACE
15.1 0.3
0.5
LEAD
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