P H O T O D I O D E
InGaAs PIN photodiode
Standard type
G8376 series
Features
l
Low noise, low dark current
l
Low terminal capacitance
l
3-pin TO-18 package
Applications
l
NIR (near infrared) photometry
l
Optical communication
InGaAs PIN photodiodes are NIR (near infrared) detectors that feature high-speed response and low noise. Various active area sizes are
provided to meet wide applications.
s Specifications / Absolute maximum ratings
Absolute maximum ratings
Active area
Reverse
voltage
V
R
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Window material
Package
(mm)
(V)
(C)
(C)
G8376-01
0.04
G8376-02
0.08
G8376-03
0.3
G8376-05
B orosilicate glass
with anti-reflective
c oating (optimiz ed
for 1.55 m peak)
TO-18
0.5
20
-40 to +85
-55 to +125
s Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted)
Spectral
response
range
Peak
sensitivity
wavelength
p
Photo
sensitivity
S
Dark
current
I
D
V
R
=5 V
Cut-off
frequency
fc
V
R
=2 V
R
L
=50
T er mi n al
c a p a cita n c e
Ct
V
R
=5 V
f=1 MHz
Shunt
resistance
Rsh
V
R
=10 mV
D
=
p
NEP
=
p
Type No.
(m)
(m)
1.3 m
(A/W)
=
p
(A/W)
Typ.
(nA)
Max.
(nA)
-3 dB
(MHz)
(pF)
(M
)
(c m Hz
1/2
/ W)
(W/Hz
1/2
)
G8376-01
0.06 0.3
3000
0.5
10000
2 10
-15
G8376-02
0.08 0.4
2000
1
8000
2 10
-15
G8376-03
0.3
1.5
400 *
5
1000
4 10
-15
G8376-05
0.9 to 1.7
1.55
0.9
0.95
0.5
2.5
200 *
12
300
5 10
12
8 10
-15
* V
R
=5 V
1
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Cat. No. KIRD1051E03
Feb. 2002 DN
InGaAs PIN photodiode
G8376 series
WAVELENGTH (m)
PHOTO SENSITIVITY (A/W)
2.0
0.5
0
(Typ. Ta=25 C)
0.8
1.0
1.2
1.4
1.6
1.8
1
0.6
WAVELENGTH (m)
TEMPERATURE COEFFICIENT (%/
C)
(Typ. Ta=25
C
)
1.0
1.2
1.4
1.6
1.8
0.8
0
1
-1
2
10 G
-40
-20
0
40
60
80
100
AMBIENT TEMPERATURE (C)
SHUNT RESISTANCE
1 G
10 M
1 M
100 M
100 G
(Typ. V
R
=10 mV)
20
G8376-02
G8376-01
G8376-05
G8376-03
1 nF
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
100 pF
1 pF
100 fF
10 pF
(Typ. Ta=25
C
, f=1 MHz)
G8376-05
G8376-03
G8376-02
G8376-01
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
DARK CURRENT
10 nA
100 pA
1 pA
10 pA
1 nA
(Typ. Ta=25
C
)
G8376-03
G8376-05
G8376-02
G8376-01
WINDOW
3.0 0.1
4.7 0.1
2.6 0.2
3.7 0.2
13 MIN.
5.4 0.2
0.45
LEAD
CASE
2.5 0.2
PHOTOSENSITIVE
SURFACE
s
Spectral response
KIRDB0002EB
KIRDB0042EA
s
Photo sensitivity temperature
characteristic
KIRDB0251EA
KIRDB0250EA
s
Terminal capacitance vs.
reverse voltage
s
Shunt resistance vs. ambient
temperature
KIRDB0249EA
s
Dark current vs. reverse voltage
s
Dimensional outline (unit: mm)
KIRDA0150EB
2
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