G8522 series are high-speed PIN photodiodes developed for optical communications and are capable of GHz (gigahertz) operation even at a low
reverse voltage (2 V or less). Please contact our sales office with your specific needs.
Features
l High-speed response at low reverse voltage
G8522-01: 3 GHz Min. (V
R
=2 V)
G8522-02: 1.9 GHz Min. (V
R
=2 V)
G8522-03: 1.5 GHz Min. (V
R
=2 V)
l Low noise, low dark current
l Low terminal capacitance
Applications
l Optical fiber communications
l Fiber channels
l Gigabit Ethernet
P H O T O D I O D E
GaAs PIN photodiode
High-speed response at low reverse voltage
G8522 series
s Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
Value
Unit
Reverse voltage V
R
Max.30
V
Operating
temperature
Topr
-40 to +85
C
Storage
temperature
Tstg
-55 to +125
C
s Electrical and optical characteristics (Ta=25
C)
G8522-01
G8522-02
G8522-03
Parameter
Symbol
Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Active area size
-
-
40
-
-
80
-
-
120
-
m
Spectral
response range
-
470 to
870
-
-
470 to
870
-
470 to
870
-
nm
Peak sensitivity
wavelength
p
-
850
-
-
850
-
850
-
nm
Photo sensitivity
S
=850 nm
0.45
0.5
-
0.45
0.5
-
0.45
0.5
-
A/W
Dark current
I
D
V
R
=5 V
-
2
50
-
8
200
-
20
500
pA
Terminal
capacitance
Ct
V
R
=2 V, f=1 MHz
-
0.3
0.45
-
0.45
0.65
-
0.8
1.2
pF
Cut-off
frequency
fc
V
R
=2 V, R
L
=50
=850 nm, -3 dB
3
-
-
1. 9
-
-
1. 5
-
-
GHz
1
GaAs PIN photodiode
G8522 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Cat. No. KGPD1008E01
Jan. 2002 DN
WAVELENGTH (nm)
(Typ. Ta=25 C)
PHOTO SENSITIVITY
(A/W)
600
400
0
0.1
0.2
0.6
0.5
0.4
0.3
800
1000
REVERSE VOLTAGE (V)
(Typ. Ta=25 C)
TERMINAL CAPACITANCE
1
0.1
0.01
100 fF
10 pF
1 pF
10
100
G8522-03
G8522-02
G8522-01
KGPDA0015EA
KGPDB0046EA
s Dimensional outline (unit: mm)
s Terminal capacitance vs. reverse voltage
s Spectral response
s Dark current vs. reverse voltage
REVERSE VOLTAGE (V)
(Typ. Ta=25 C)
DARK CURRENT
1
0.1
0.01
10 fA
100 fA
100 pA
10 pA
1 pA
10
100
WINDOW
3.0 0.2
2.7 0.2
3.6
0.2
13 MIN.
0.4 MAX.
4.6 0.1
5.4 0.2
0.45
LEAD
PHOTOSENSITIVE
SURFACE
CASE
2.54 0.2
1.2 MAX.
KGPDB0044EA
KGPDB0045EA
2
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