P H O T O D I O D E
InGaAs PIN photodiode
Thermoelectrically cooled NIR (near infrared) detector with low noise and high-speed response
G8605 series
Features
l
High-speed response
l
Low noise
l
Various active area sizes available from
1 to
5 mm
Applications
l
Optical power meter
l
Water content analyzer
l
Laser diode life test
InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.
G8605 series of InGaAs PIN photodiodes are thermoelectrically cooled types that decrease the dark current to achieve high D
*
. One-stage (-10 C)
and two-stage (-20 C) thermoelectrically cooled types are provided.
Accessories (Optional)
l
Preamp for InGaAs PIN photodiode
C4159-02
(High-speed type)
l
Preamp for InGaAs PIN photodiode
C4159-03
(High sensitivity type)
l
Heatsink for one-stage TE-cooled type
A3179
l
Heatsink for two-stage TE-cooled type
A3179-01
l
Temperature controller for TE-cooled type C1103-04
1
s Specifications / Absolute maximum ratings
Absolute maximum ratings
Active
area
Thermistor
power
dissipation
TE-cooler
allowable
current
Reverse
voltage
V
R
Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dim ensional
o u tlin e /
W in d o w
m a te ria l *
Package
Cooling
(mm)
(mW)
(A)
(V)
(C)
(C)
G8605-11
1
5
G8605-12
2
5
G8605-13
3
5
G8605-15
/K
One-stage
TE-cooled
5
1.5
2
G8605-21
1
5
G8605-22
2
5
G8605-23
3
5
G8605-25
/K
TO-8
Two-stage
TE-cooled
5
0.2
1.0
2
-40 to +70
-55 to +85
s Electrical and optical characteristics (Typ. unless otherwise noted)
M easurem ent
condition
Element
tem perature
S pe c tra l
res p o ns e
ran ge
P e a k
sensitivity
w ave le ngth
p
Photo
sensitivity
S
D a rk c u rre n t
I
D
V
R
=1 V
Cut-off
fre q u e n c y
fc
V
R
=1 V
R
L
=50
Terminal
capacitance
Ct
V
R
=1 V
f=1 MHz
Shunt
re sis ta n c e
Rsh
V
R
=10 mV
D
=
p
NEP
=
p
Type No.
(C)
(m)
(m)
1 . 3 m
(A /W )
=
p
(A /W )
T yp .
(n A )
M a x .
(n A )
(MHz)
(pF)
(M
)
(cm H z
1/2
/W ) (W/Hz
1/2
)
G8605-11
0 . 0 7
0 . 3 5
18
150
1500
5 10
-15
G8605-12
0 . 3
1 . 5
4
550
300
1 10
-14
G8605-13
1
5
2
1000
100
2 10
-14
G8605-15
-10
0.9 to 1 .6 7
2 . 5
1 2 .5
0.6
3500
30
2 10
13
3 10
-14
G8605-21
0 . 0 3
0 . 1 5
18
150
3000
3 10
-15
G8605-22
0 . 1 5
0 . 7 5
4
550
600
7 10
-15
G8605-23
0 . 5
2 . 5
2
1000
200
1 10
-14
G8605-25
-20
0.9 to 1 .6 5
1.55
0 . 9
0 . 9 5
1 . 2
6
0.6
3500
60
3 10
13
2 10
-14
* Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55
m peak)
InGaAs PIN photodiode
G8605 series
2
WAVELENGTH (m)
PHOTO SENSITIVITY (A/W)
2.0
0.5
(Typ.)
0.8
1.0
1.2
1.4
1.6
1.8
1
0.6
T=25 C
T= -10 C
T= -20 C
WAVELENGTH (m)
TEMPERATURE COEFFICIENT (%/
C)
(Typ. Ta=25
C
)
1.0
1.2
1.4
1.6
1.8
0.8
0
1
-1
2
98
0
2
6
10
12
16
INCIDENT LIGHT LEVEL (mW)
RELATIVE SENSITIVITY (%)
96
92
90
94
100
102
(Typ. Ta=25 C,
=1.3
m, R
L
=2
, V
R
=0 V)
4
8
14
G8605-11/-21
G8605-12/-22
G8605-15/-25
G8605-13/-23
100 nA
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
DARK CURRENT
10 nA
100 pA
10 pA
1 nA
1
A
(Typ. Ta=25
C)
G8605-15/-25
G8605-13/-23
G8605-12/-22
G8605-11/-21
s
Spectral response
KIRDB0184EA
s
Photo sensitivity temperature characteristic
KIRDB0042EA
Spectral response shifts towards the
short wavelength side when cooled.
One-stage TE-cooled type:
c=1.67
m
Two-stage TE-cooled type:
c=1.65
m
s
Photo sensitivity linearity
KIRDB0241EA
s
Dark current vs. reverse voltage
KIRDB0242EA
Applying a reverse voltage increases
dark current, but improves frequency
characteristics and output linearity.
InGaAs PIN photodiode
G8605 series
3
1 nF
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
TERMINAL CAPACITANCE
100 pF
1 pF
10 pF
10 nF
(Typ. Ta=25
C, f=1 MHz)
G8605-11/-21
G8605-12/-22
G8605-13/-23
G8605-15/-25
1 G
-40
-20
0
40
60
80
SHUNT RESISTANCE
100 M
1 M
100 k
10 M
10 G
(Typ. V
R
=10 mV)
20
G8605-13/-23
G8605-15/-25
G8605-12/-22
G8605-11/-21
ELEMENT TEMPERATURE (C)
ELEMENT TEMPERATURE (C)
RESISTANCE (
)
10
3
(Typ.)
10
4
10
5
10
6
-40
-20
0
20
20
0
0.4
0.8
1.2
1.6
CURRENT (A)
ELEMENT TEMPERATURE
(
C)
0
-40
-60
-20
40
(Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W)
ONE-STAGE
TE-COOLED TYPE
TWO-STAGE
TE-COOLED TYPE
1.2
0
0.5
1.0
1.5
VOLTAGE (V)
CURRENT (A)
1.0
0.6
0
0.8
1.4
1.6
(Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W)
0.4
0.2
TWO-STAGE
TE-COOLED TYPE
ONE-STAGE
TE-COOLED TYPE
s
Terminal capacitance vs. reverse voltage
s
Shunt resistance vs. element temperature
s
Thermistor temperature characteristic
s
Cooling characteristics of TE-cooler
s
Current vs. voltage characteristics of TE-cooler
KIRDB0115EA
KIRDB0243EA
KIRDB0244EA
KIRDB0116EA
KIRDB0231EA
In applications requiring high-speed
response, the lead length should be as
short as possible to minimize the termi-
nal capacitance.
InGaAs PIN photodiode
G8605 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Cat. No. KIRD1049E01
Apr. 2001 DN
4
DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
WINDOW
10 0.2
14 0.2
15.3 0.2
4.4 0.2
6.4 0.2
12 MIN.
0.45
LEAD
10.2 0.2
5.1 0.2
5.1 0.2
PHOTOSENSITIVE
SURFACE
DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
WINDOW
10 0.2
14 0.2
15.3 0.2
6.7 0.2
10 0.2
12 MIN.
10.2 0.2
5.1 0.2
5.1 0.2
0.45
LEAD
PHOTOSENSITIVE
SURFACE
s
Dimensional outlines (unit: mm)
G8605-21/-22/-23/-25
G8605-11/-12/-13/-15
KIRDA0152EA
KIRDA0153EA
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