G8921-01
Features
l Active area: 0.06 mm
Element pitch: 250 m
4-element array
l High-speed response: 10 Gbps [(2.5 Gbps per channel) 4]
at low bias voltage (V
R
=2 V)
l Low dark current, low capacitance
l Up to 16 elements available as option
Applications
l Optical fiber communications
l High-speed data link
P H O T O D I O D E
GaAs PIN photodiode array
Photodiode array for data communication
1
I General ratings
Parameter
Symbol
Value
Unit
Active area
-
f0.06
mm
Element pitch
-
250
m
Number of elements
-
4
ch
I Absolute maximum ratings
Parameter
Symbol
Remark
Value
Unit
Reverse voltage
V
R
Max
.
30
V
Reverse current
I
R
Max.
0.5
mA
Operating temperature
Topr
-40 to +85
C
Storage temperature
Tstg
*
-55 to +125
C
* In N
2
environment or in vacuum
I Electrical and optical characteristics (Unless other wise, Ta=25 C, per 1 element)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
l
-
470 to 870
-
nm
Peak sensitivity wavelength
lp
-
850
-
nm
Photo sensitivity
S
l=850 nm
0.45
0.5
-
A/W
Dark current
I
D
V
R
=5 V
-
2
50
pA
Terminal capacitance
Ct
V
R
=2 V, f=1 MHz
-
0.35
0.5
pF
Cut-off frequency
fc
l=850 nm, V
R
=2 V,
R
L
=50 W, -3 dB
2
-
-
GHz
GaAs PIN photodiode array
G8921-01
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Cat. No. KGPD1009E02
Jul. 2002 DN
0.15
0.25
6.4
2.30
1.0
0.2 0.05
ACTIVE AREA
CATHODE
0.06 4 ch
ANODE
2
I Spectral response
KGPDB0048EA
I Dark current vs. reverse voltage
KGPDB0049EA
I Terminal capacitance vs. reverse voltage
KGPDB0050EA
I Dimensional outline (unit: mm)
KGPDA0017EA
0
0.1
0.2
0.3
0.4
0.5
0.6
300
500
600
700
800
900
1000
400
(Typ. Ta=25 C)
PHOTO SENSITIVITY (A/W)
WAVELENGTH (nm)
REVERSE VOLTAGE (V)
(Typ. Ta=25 C)
DARK CURRENT
1
0.1
0.01
10 fA
100 fA
100 pA
10 pA
1 pA
10
100
REVERSE VOLTAGE (V)
(Typ. Ta=25 C)
TERMINAL CAPACITANCE
1
0.1
0.01
100 fF
10 pF
1 pF
10
100
I Cross-talk characteristic
KGPDB0051EA
0
100
200
300
400
500
0.001
1000
100
10
1
0.1
0.01
POSITION (m)
RELATIVE SENSITIVITY (%)
(Typ. Ta=25 C,
=830 nm, step: 5 m, Pin=20 nW, spot light size: 10 m)
n ch
n+1 ch
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