U V T O I R D E T E C T O R
Two-color detector
Broad spectral response range from UV through IR
K1713/K3413-01, -02
Features
l Broad spectral response
Suitable for spectrophotometers, flame monitors, etc.
l Noncooled type:
Room temperature operation for easy handling
One-stage thermoelectrically cooled type:
Keeps the detector temperature at a constant level to
make high-precision measurements.
Applications
l Spectrophotometers
l Laser monitors
l Flame monitors
l Radiation thermometers
Accessories (Optional)
l Heatsink for thermoelectrically cooled type
A3179-03
l Temperature controller for thermoelectrically cooled type
C1103-04
l Photosensor amplifier
C2719
l Amplifier for PbS and PbSe detectors
C3757-02
K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared
detector element. This structure allows you to design instruments using the same optical path from UV through IR.
I General ratings / Absolute maximum ratings
Absolute maximum ratings
Active
area size
Thermistor
allowable
dissipation
TE-cooler
allowable
current
Reverse
voltage
V
R
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *
1
Package
Cooling
Detector
(mm)
(mW)
(A)
(V)
(C)
(C)
Si
2.4 2.4
5
K1713-01
PbS
1.8 1.8
100 *
2
Si
2.4 2.4
5
K1713-02
/S
TO-5
Non-
cooled
PbSe
1.8 1.8
-
-
100 *
2
Si
2.4 2.4
5
K3413-01
PbS
1.8 1.8
100 *
2
Si
2.4 2.4
5
K3413-02
/S
TO-8
One-stage
TE-cooled
PbSe
1.8 1.8
0.2
1.5
100 *
2
-30 to +50 -55 to +50
I Electrical and optical characteristics (Typ., unless otherwise noted)
Measurement
condition
Element
temperature
T
Peak
sensitivity
wavelength
lp
Photo sensitivity
S
l=lp
Shunt resistance
or
dark resistance
D*
l=lp
Rise time
tr
V
R
=0 V
R
L
=1 kW
10 to 90 %
Type No.
Detector
(C)
(m)
(A/W)
(MW)
(cm Hz
1/2
/W)
(s)
Si
0.94
0.45
300
1.4 10
13
0.2 *
4
K1713-01
PbS
25
2.2
6 10
4
(V/W)
0.2 to 2
5 10
10
*
3
200 Max. *
5
Si
0.94
0.45
300
1.4 10
13
0.2 *
4
K1713-02
PbSe
25
4.0
5 10
2
(V/W)
0.5 to 1.8
5 10
8
*
3
3 Max. *
5
Si
25
0.94
0.45
300
1.4 10
13
0.2 *
4
K3413-01
PbS
-10
2.4
3 10
5
(V/W)
0.5 to 10
1 10
11
*
3
600 Max. *
5
Si
25
0.94
0.45
300
1.4 10
13
0.2 *
4
K3413-02
PbSe
-10
4.1
1.5 10
3
(V/W)
1.5 to 5
1 10
9
*
3
5 Max. *
5
*1: Window material S: sapphire glass
*2: Maximum supply voltage
*3: Light source 500 K black body
Supply voltage: 15 V
Chopping frequency: 600 Hz,
Load resistance: nearly equal to element dark resistance
Noise bandwidth: 60 Hz
Input energy: 4.8 W/cm
2
(PbSe: 16.7 W/cm
2
)
*4: l=655 nm
*5: 0 to 63 %
1
Two-color detector
K1713/K3413-01, -02
WAVELENGTH (m)
(Typ. Ta=25 C)
1
0
4
5
2
3
1.5
4.5
5.5
2.5
3.5
60
20
80
40
100
RELATIVE VALUE (%)
T= -10 C
T=25 C
KIRDB0282EA
WAVELENGTH (m)
(Typ. Ta=25 C)
10
13
10
14
0.2
10
12
1.2
0.4
0.6
0.8
1.0
D
*
(cm
Hz /W)
1
2
WAVELENGTH (m)
(Typ. Ta=25 C)
1
0
3.5
1.5
2
2.5
3
20
40
60
100
80
RELATIVE VALUE (%)
T=25 C
T= -10 C
I Spectral response
KIRDB0058EE
Si photodiode
PbS photoconductive detector
PbSe photoconductive detector
KIRDB0283EA
I Cooling characteristics of TE-cooler
CURRENT (A)
(Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W)
0
-50
1.6
1.2
1.4
0.4
0.8
1.0
0.2
0.6
0
-30
30
-20
-40
20
-10
10
ELEMENT TEMPERATURE (
C)
KIRDB0276EA
I Current vs. voltage characteristics of TE-cooler
(Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W)
VOLTAGE (V)
0
0
1.2
0.4
0.8
1.0
0.2
0.6
1.0
0.4
1.6
0.6
0.2
1.4
0.8
1.2
CURRENT (A)
KIRDB0277EA
2
Two-color detector
K1713/K3413-01, -02
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Cat. No. KIRD1029E04
Dec. 2002 DN
0.4
LEAD
30 MIN.
8.1 0.2
3.3 0.2
4.3 0.2
6.1 0.2
WINDOW
5.5 0.2
9.2 0.3
5.1 0.2
PbS
PbSe
Si
Si (N)
Si (P)
PbS, PbSe
PbS, PbSe
14 0.2
WINDOW
10 0.2
15.3 0.2
5.1 0.2
6.1 0.2
10.0 0.2
12 MIN.
0.45
LEAD
PbS
PbSe
Si
SAPPHIRE GLASS
10.2 0.2
5.1 0.2
PbS, PbSe
PbS, PbSe
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
Si (-)
Si (+)
NC
K1713-01, -02
K3413-01, -02
I Dimensional outline (unit: mm)
KIRDA0041EE
KIRDA0043ED
I Thermistor temperature characteristic
ELEMENT TEMPERATURE (C)
(Typ.)
-40
10
3
30
-20
10
20
-30
-10
0
10
6
10
5
10
4
RESISTANCE (
)
KIRDB0278EA
3
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