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Электронный компонент: P2682-01

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P2532-01, P2682-01
Features
l
Room temperature operation
Makes PbS cells useful in a wide range of applications
including radiation thermometers and flame monitors
l
High sensitivity
l
Large active area
l
Low price
l
Lower temperature detection limit: 100 C
l
Thermoelectrically cooled types
Cooling a PbS cell increases sensitivity and improves
S/N, so cooled types are widely used in precision
photometry such as in analytical instruments.
Applications
l
Radiation thermometers
l
Flame monitors
l
Water content analyzers
l
Food ingredient analysis
l
Spectrophotometers
I N F R A R E D D E T E C T O R
PbS photoconductive detector
Infrared detectors utilizing photoconductive effects
Accessories (Optional)
l
Heatsink for one-stage TE-cooled type
A3179
l
Heatsink for two-stage TE-cooled type
A3179-01
l
Temperature controller for TE-cooled type
C1103-04
l
Preamplifier for PbS/PbSe photoconductive detector C3757-02
l
Power supply for amplifier
C3871
l
Infrared detector module with preamp Cooled type
P4638
s Specification / Absolute maximum ratings
Absolute maximum ratings
Active
area
Thermistor
resistance
Thermistor
power
dissipation
TE-cooler
current
dissipation
Supply
voltage
Operating
tem perature
Topr
Storage
te mp erature
Tstg
Type No.
Di me nsional
outline/
Window
material *
1
Package
Cooling
(mm)
(k
)
(mW)
(A)
(V)
(C)
(C)
P2532-01
/S
One-stage
TE-cooled
1.5
P2682-01
/S
TO-8
Two-stage
TE-cooled
4 5
9
0.2
1.0
100
-30 to + 5 0 -55 to + 5 0
s Electrical and optical characteristics (Typ. unless otherwise noted)
M easure m ent
condition
Element
tem perature
Peak
sensitivity
wavelength
p
Cut-off
w avelength
c
Photo sensitivity *
2
S
=
p
Vs=15 V
D
(500, 600, 1)
D
(
p, 60 0, 1)
Rise time
tr
0 to 63 %
Dark
resistanc e
Rd
Type No.
(C)
(m)
(m)
Min.
(V/W)
Typ.
(V/W)
Min.
(c m H z
1/2
/ W)
Typ.
(c m H z
1/2
/ W) (c m H z
1/2
/ W)
Max.
(s)
(M
)
P2532-01
-10
2.4
3.1
3 10
4
8 10
4
5 10
8
1 10
9
1 10
11
0.5 to 10
P2682-01
-20
2.5
3.2
6 10
4
1.6 10
5
8 10
8
2 10
9
2 10
11
600
0.8 to 10
*1: Window material S: sapphire glass
*2: Chopping frequency: 600 Hz, load resistance: nearly equal to detector element dark resistance
1
PbS photoconductive detector
P2532-01, P2682-01
ELEMENT TEMPERATURE (C)
RELATIVE SENSITIVITY
(Typ.)
10
1
10
2
-20
10
3
-10
0
10
20
30
40
50
60
LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 4.8 W/cm
2
CHOPPING FREQUENCY: 600 Hz
SUPPLY VOLTAGE: 15 V
RELATIVE OUTPUT
INCIDENT ENERGY (W/cm
2
)
(Typ. Ta=25 C, FULLY ILLUMINATED)
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-9
10
-8
10
-7
10
-6
10
-5
10
-4
DEPENDENT ON NEP
ELEMENT TEMPERATURE (C)
RELATIVE VALUE
(Typ.)
10
1
10
2
10
3
-10
0
10
20
30
40
50
60
-20
RISE TIME
DARK RESISTANCE
CHOPPING FREQUENCY (Hz)
RELATIVE
S/N
(Typ. Ta=25 C)
10
1
10
2
10
3
10
1
10
2
10
3
LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 4.8 W/cm
2
SUPPLY VOLTAGE: 15 V
tr: 200 s
S/N
S
N
SUPPLY VOLTAGE (V)
SIGNAL
(V)
NOISE (V)
10
20
30
40
50
60
(Typ. Ta=25 C)
0
0
0
200
400
600
800
2
4
6
8
1
3
5
7
NOISE
SIGNAL
LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 4.8 W/cm
2
CHOPPING FREQUENCY: 600 Hz
FREQUENCY BANDWIDTH: 60 Hz
s
Spectral response
KIRDB0279EA
s
S/N vs. supply voltage
s
S/N vs. chopping frequency
s
Photo sensitivity temperature characteristic
s
Dark resistance, rise time temperature characteristics
s
Photo sensitivity linearity
KIRDB0046EA
KIRDB0048EB
KIRDB0047EB
KIRDB0049EB
KIRDB0050EA
Increasing the chopping frequency re-
duces the 1/f noise and results in an S/N
improvement. The S/N can also be im-
proved by narrowing the noise bandwidth
using a lock-in amplifier.
By making the incident light spot smaller
than the active area, the upper limit of
the linearity becomes lower.
If voltage of higher than 60 V is applied,
the noise increases exponentially, de-
grading the S/N. The device should be
operated at 60 V or less.
Cooling the device enhances its sensi-
tivity, but the sensitivity also depends
on the load resistance in the circuit.
2
WAVELENGTH (m)
(Typ.)
1
4
2
3
5
0
20
40
60
80
100
RELATIVE VALUE
(%)
-20 C
-10 C
25 C
PbS photoconductive detector
P2532-01, P2682-01
s
Connection example (P2682-01)
C3757-02
C1103-04
P2682-01
+
A3179-01
AMP
TEMPERATURE
CONTROLLER
DETECTOR AND
HEATSINK
C3871
POWER SUPPLY FOR PREAMP
C4696
CHOPPER
CABLE (SUPPLIED WITH C1103-04)
BNC CONNECTOR CABLE
(SOLD SEPARATELY)
Connect C1103-04 and C3871
ground terminals together.
SIGNAL
PROCESSING
CIRCUIT
LOCK-IN AMP or
SPECTRUM ANALYZER
2-CONDUCTOR
SHIELDED CABLE
CABLE (SUPPLIED WITH C3757-02)
CURRENT (A)
ELEMENT TEMPERATURE
(

C)
(Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W)
-60
40
-20
20
-40
0
0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
1.0
ONE-STAGE
TE-COOLED
TWO-STAGE
TE-COOLED
VOLTAGE (V)
CURRENT (A)
(Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W)
0
1.6
0.6
1.4
0.2
1.0
0.4
1.2
0.8
0
0.8
0.6
0.4
0.2
1.2
1.0
ONE-STAGE
TE-COOLED
TWO-STAGE
TE-COOLED
KIRDB0116EA
ELEMENT TEMPERATURE (C)
RESISTANCE (
)
(Typ.)
10
3
10
6
10
4
10
5
-40
-30
0
-20
20
10
-10
30
s
Cooling characteristics of TE-cooler
s
Current vs. voltage characteristics of TE-cooler
s Thermistor temperature characteristic
KIRDB0171EA
KIRDB0115EB
KIRDC0003EA
3
PbS photoconductive detector
P2532-01, P2682-01
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2003 Hamamatsu Photonics K.K.
Cat. No. KIRD1019E06
Sep. 2003 DN
KIRDA0116EA
s
s
s
s
s
Dimensional outlines (unit: mm)
DETECTOR
DETECTOR
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
WINDOW
10 0.2
14 0.2
15.3 0.2
4.5 0.2
6.4 0.2
12 MIN.
0.45
LEAD
PHOTOSENSITIVE
SURFACE
10.2 0.2
5.1 0.2
5.1 0.2
P2532-01
4
KIRDA0117EA
DETECTOR
DETECTOR
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
WINDOW
10 0.2
14 0.2
15.3 0.2
6.9 0.2
10 0.2
12 MIN.
10.2 0.2
5.1 0.2
5.1 0.2
PHOTOSENSITIVE
SURFACE
0.45
LEAD
P2682-01