ChipFind - документация

Электронный компонент: P3207-05

Скачать:  PDF   ZIP
P791/P2038/P2680 series, P3207-05
I N F R A R E D D E T E C T O R
PbSe photoconductive detector
Detection capability up 5 m range (TE-cooled type)
Features
l High-speed response
l Room temperature operation
Compared to other types of detectors used in the same
wavelength range, PbSe cells have higher response
speed and can also operate at room temperature,
making them useful in a wide range of applications
such as gas analyzers, etc.
l Lower temperature detection limit: 50 C approx.
Applications
l Radiation thermometer
l Flame detector
l Gas analyzer
l Film thickness gauge
Accessories (Optional)
l Heatsink for one-stage TE-cooled type
A3179
l Heatsink for two-stage TE-cooled type
A3179-01
l Temperature controller for TE-cooled type
C1103-04
l Preamplifier for PbS/PbSe photoconductive detector C3757-02
l Infrared detector module with preamp Non-cooled type P4245
Cooled type
P4639
Hamamatsu provides various types of PbSe photoconductive cells including room temperature operation types and thermoelectrically cooled
types. Cooled type PbSe photoconductive cells offer higher sensitivity and improved S/N, and are widely used in precision photometry such as in
analytical instruments.
I Specification / Absolute maximum ratings
Absolute maximum ratings
Active
area
Thermistor
resistance
Thermistor
power
dissipation
TE-cooler
current
dissipation
Supply
voltage
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline Package Cooling
(mm)
(kW)
(mW)
(A)
(V)
(C)
(C)
P791-11
2 2
P791-13
3 3
P3207-05
TO-5 Non-cooled
2 2
-
-
-
P2038-02
2 2
P2038-03
One-stage
TE-cooled 3 3
1.5
P2680-02
2 2
P2680-03
TO-8
Two-stage
TE-cooled 3 3
9
0.2
1.0
100
-30 to +50 -55 to +60
I Electrical and optical characteristics (Typ. unless otherwise noted)
Measurement
condition
Element
temperature
T
Peak
sensitivity
wavelength
lp
Cut-off
wavelength
lc
Photo sensitivity
S *
l=lp
Vs=15 V
D*
(500, 600, 1)
D*
(lp, 600, 1)
Rise time
tr
0 to 63 %
Dark
resistance
Rd
Type No.
(C)
(m)
(m)
Min.
(V/W)
Typ.
(V/W)
Min.
(cmHz
1/2
/W)
Typ.
(cmHz
1/2
/W) (cm Hz
1/2
/W)
Max.
(s)
(MW)
P791-11
7 10
1 10
!
P791-13
4.0
3 10
5 10
5 10
%
1 10
&
1 10
'
P3207-05 *
25
4.3
4.8
7 10
1 10
!
-
-
8 10
&
3
0.3 to 1.5
P2038-02
2.2 10
!
3 10
!
P2038-03
-10
4.1
5.1
1 10
!
1 10
!
1 10
&
3 10
&
3 10
'
1.7 to 7.0
P2680-02
2.7 10
!
4 10
!
P2680-03
-20
4.2
5.2
1.2 10
!
2 10
!
2 10
&
4 10
&
4 10
'
5
1.8 to 8.0
*1: Half width 400 nm
*2: Chopping frequency: 600 Hz, load resistance: nearly equal to detector element dark resistance
1
PbSe photoconductive detector
P791/P2038/P2680 series, P3207-05
ELEMENT TEMPERATURE (C)
RELATIVE VALUE
(Typ.)
10
1
10
2
10
3
0
20
10
40
50
30
60
-20
-10
DARK RESISTANCE
RISE TIME
ELEMENT TEMPERATURE (C)
RELATIVE SENSITIVITY
(Typ.)
10
1
10
2
-20
10
3
-10
0
10
20
30
40
50
60
LIGHT SOURCE: BLACK BODY 500 K
SUPPLY VOLTAGE: 15 V
INCIDENT ENERGY: 16.7 W/cm
2
CHOPPING FREQUENCY: 600 Hz
CHOPPING FREQUENCY (Hz)
RELATIVE
S/N
(Typ. Ta=25 C)
10
1
10
2
10
3
10
2
10
3
10
4
S/N
S
N
LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 16.7 W/cm
2
SUPPLY VOLTAGE: 15 V
SUPPLY VOLTAGE (V)
SIGNAL
(V)
NOISE
(V)
100
70
80
90
(Typ. Ta=25 C)
0
0
100
200
300
600
500
400
0
6
3
12
15
9
18
10
20
30
40
50
60
LIGHT SOURCE: BLACK BODY 500 K
INCIDENT ENERGY: 16.7 W/cm
2
CHOPPING FREQUENCY: 600 Hz
FREQUENCY BANDWIDTH: 60 Hz
Supply voltage is the
value which contains
load resistance
N
S
I Spectral response
I S/N vs. supply voltage
I S/N vs. chopping frequency
I Photo sensitivity temperature characteristic
I Dark resistance, rise time temperature characteristics
KIRDB0280EA
KIRDB0281EA
KIRDB0054EB
KIRDB0055EB
P791/P2038/P2680 series
P3207-05
Increasing the chopping frequency re-
duces the 1/f noise and results in an S/N
improvement. The S/N can also be im-
proved by narrowing the noise bandwidth
using a lock-in amplifier.
KIRDB0052EC
KIRDB0053EB
Cooling the device enhances its sensi-
tivity, but the sensitivity also depends
on the load resistance in the circuit.
WAVELENGTH (m)
(Typ.)
1
2
3
4
5
6
7
0
20
40
60
80
100
RELATIVE VALUE
(%)
-20 C
-10 C
25 C
WAVELENGTH (
m)
(Typ.)
1
2
3
4
5
6
7
0
20
40
60
80
100
RELATIVE VALUE (%)
2
PbSe photoconductive detector
P791/P2038/P2680 series, P3207-05
I Connection example (P2680-03)
C3757-02
C1103-04
P2680-03
+
A3179-01
AMP
TEMPERATURE
CONTROLLER
DETECTOR AND
HEATSINK
C3871
POWER SUPPLY FOR PREAMP
C4696
CHOPPER
CABLE (SUPPLIED WITH C1103-04)
BNC CONNECTOR CABLE
(SOLD SEPARATELY)
Connect C1103-04 and C3871
ground terminals together.
SIGNAL
PROCESSING
CIRCUIT
LOCK-IN AMP or
SPECTRUM ANALYZER
2-CONDUCTOR
SHIELDED CABLE
CABLE (SUPPLIED WITH C3757-02)
I Photo sensitivity linearity
RELATIVE SENSITIVITY
INCIDENT ENERGY (W/cm
2
)
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
(Typ. Ta=25 C, FULLY ILLUMINATED)
DEPENDENT ON NEP
I Cooling characteristics of TE-cooler
20
0
0.4
0.8
1.2
1.6
0.2
0.6
1.0
1.4
CURRENT (A)
ELEMENT TEMPERATURE
(
C)
0
-40
-60
-20
40
(Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W)
ONE-STAGE
TE-COOLED
TWO-STAGE
TE-COOLED
I Current vs. voltage characteristics of the TE-cooler
VOLTAGE (V)
CURRENT (A)
(Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W)
0
1.6
0.6
1.4
0.2
1.0
0.4
1.2
0.8
0
0.8
0.6
0.4
0.2
1.2
1.0
ONE-STAGE
TE-COOLED
TWO-STAGE
TE-COOLED
I Thermistor temperature characteristic
ELEMENT TEMPERATURE (
C)
RESISTANCE (
)
10
3
(Typ.)
10
4
10
5
10
6
-40
-20
0
20
-30
-10
10
30
KIRDB0056EA
KIRDB0185EA
KIRDB0115EB
KIRDB0116EA
KIRDC0045EA
By making the incident light spot smaller
than the active area, the upper limit of
the linearity becomes lower.
3
PbSe photoconductive detector
P791/P2038/P2680 series, P3207-05
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
0.45
LEAD
9.1 0.3
WINDOW
5.5 0.1
2.1 0.2
4.2 0.2
18 MIN.
0.4 MAX.
8.1 0.1
PHOTOSENSITIVE
SURFACE
5.1 0.2
1.5 MAX.
DETECTOR
DETECTOR
GND
0.45
LEAD
PHOTOSENSITIVE
SURFACE
DETECTOR
DETECTOR
GND
WINDOW
5.5 0.1
2.1 0.2
0.4 MAX.
8.1 0.1
9.1 0.3
3.0 0.2
18 MIN.
4.2 0.2
FILTER
5.1 0.2
1.5 MAX.
I
I
I
I
I Dimensional outlines (unit: mm)
KIRDA0056EC
KIRDA0118EA
DETECTOR
DETECTOR
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
WINDOW
10 0.2
14 0.2
15.3 0.2
4.3 0.2
6.4 0.2
12 MIN.
0.45
LEAD
PHOTOSENSITIVE
SURFACE
10.2 0.2
5.1 0.2
5.1 0.2
DETECTOR
DETECTOR
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
WINDOW
10 0.2
14 0.2
15.3 0.2
6.7 0.2
10 0.2
12 MIN.
10.2 0.2
5.1 0.2
5.1 0.2
PHOTOSENSITIVE
SURFACE
0.45
LEAD
KIRDA0125EA
KIRDA0128EA
Cat. No. KIRDA1020E04
Dec. 2002 DN
P791-11/-13
P3207-05
P2680-02/-03
P2038-02/-03
4