GENERAL
Parameter
Description/Value
Unit
Spectral Response
Wavelength of Maximum Response
Photocathode
Window Material
Dynode
Base
Suitable Socket
nm
nm
--
mm dia.
--
--
--
--
--
300 to 850
420
Multialkali
15
Borosilicate glass
Linear focused
10
12-pin glass base
E678-12L (supplied)
Material
Minimum Useful Area
Structure
Number of Stages
PHOTOMULTIPLIER TUBE
R1617
MAXIMUM RATINGS (Absolute Maximum Values)
Information furnished by HA MAM ATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
1999 Hamamatsu Photonics K.K.
Subject to local technical requirements and regulations, availability of products included in this promotional material may var y. Please consult with our sales office.
Supply Voltage: 1000Vdc, K: Cathode, Dy: Dynode, P: Anode
19mm (3/4 Inch) Diameter, S-20 Spectral Response
Multialkali Photocathode, 10-Stage, Head-on Type
CHARACTERISTICS (at 25
C)
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Parameter
Min.
Unit
Parameter
Value
Unit
Supply Voltage
Average Anode Current
Ambient Temperature
1250
250
0.1
-80 to +50
Vdc
Vdc
mA
C
Between Anode and Cathode
Between Anode and Last Dynode
Luminous (2856K)
Radiant at 420nm
Red/White Ratio (with R-68 filter)
Luminous (2856K)
Radiant at 420nm
Anode Pulse Rise Time
Electron Transit Time
Cathode Sensitivity
Anode Sensitivity
Gain
Anode Dark Current (after 30 min. storage in darkness)
Time Response
Electrodes
Ratio
K
Dy1
1.5
Dy2
1
Dy3
1
Dy4
1
Dy5
1
Dy6
1
Dy7
1
Dy8
1
Dy9
1
1
1
Dy10
P
80
--
--
30
--
--
--
--
--
120
51
0.2
120
5.1
10
4
1.0
10
6
4
2.5
27
A/lm
mA/W
--
A/lm
A/W
--
nA
ns
ns
--
--
--
--
--
--
20
--
--
Typ.
Max.
PHOTOMULTIPLIER TUBE R1617
Figure 1: Typical Spectral Response
TPMH1220E02
DEC. 1999
TPMHB0547EB
Figure 2: Typical Gain Characteristics
TPMHB0548EA
Figure 3: Dimensional Outline and Basing Diagram (Unit: mm)
TPMHA0434EA
TACCA0047EA
Socket
(E678-12L)
Basing Diagram
(Bottom View)
500
600
700
800
1000
1200
1400
10
4
10
6
10
7
10
8
10
3
SUPPLY VOLTAGE (V)
GAIN
10
5
18.6 0.7
FACEPLATE
PHOTOCATHODE
88 2
13MAX.
12 PIN BASE
DY3
DY5
DY7
DY9
P
SHORT PIN
1
2
3
4
5
6
7
8
9
10
11
12
DY10
DY8
DY6
DY4
DY2
K
DY1
15MIN.
35
9
3.7
(23.6)
28.6
13
6.7
360
13
9.5
3.3
10.5
(8)
18
2
7
18
13
2
2-R4
2- 3.2
WAVELENGTH (nm)
100
10
1
0.1
0.01
200
600
400
800
1000
WAVELENGTH (nm)
CA
THODE RADIANT
SENSITIVITY
(mA/W)
QUANTUM EFFICIENCY
(%)
CATHODE
RADIANT
SENSITIVITY
QUANTUM
EFFICIENCY
HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
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Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: 44(20)8-367-3560, Fax: 44(20)8-367-6384
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01
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