GENERAL
Parameter
Description/Value
Unit
Spectral Response
Wavelength of Maximum Response
Photocathode
Window Material
Dynode
Base
Suitable Socket
nm
nm
--
mm dia.
--
--
--
--
--
160 to 320
240
Cs-Te
8
Synthetic Silica
Linear-focused
8
11-pin glass base
E678-11N (supplied)
Material
Minimum Effective Area
Structure
Number of Stages
PHOTOMULTIPLIER TUBE
R1893
MAXIMUM RATINGS (Absolute Maximum Values)
Information furnished by HA MAM ATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
1999 Hamamatsu Photonics K.K.
Subject to local technical requirements and regulations, availability of products included in this promotional material may var y. Please consult with our sales office.
10 mm (3/8 Inch) Diameter, 8-Stage,
Cs-Te Photocathode, Head-On Type
CHARACTERISTICS (at 25
C)
Parameter
Min.
Unit
Parameter
Value
Unit
Supply Voltage
Average Anode Current
Ambient Temperature
1500
250
0.01
-80 to +50
Vdc
Vdc
mA
C
Between Anode and Cathode
Between Anode and Last Dynode
Cathode Sensitivity
Anode Sensitivity
Gain
Anode Dark Current (after 30min. storage in darkness)
Time Response
Radiant at 254nm
Radiant at 254nm
Anode Pulse Rise Time
Electron Transit Time
--
1.2
10
3
--
--
--
--
24
3.6
10
3
1.5
10
5
0.5
0.8
7.8
mA/W
A/W
--
nA
ns
ns
--
--
--
2.5
--
--
Typ.
Max.
Supply Voltage: 1250Vdc, K: Cathode, Dy: Dynode, P: Anode
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes
Ratio
K
Dy1
2
Dy2
Dy3
2
Dy4
1
Dy5
1
Dy6
1
Dy7
1
1
Dy8
P
1
1
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
PHOTOMULTIPLIER TUBE R1893
Figure 1: Typical Spectral Response
TPMH1260E01
MAR. 1999
TPMHB0610EA
Figure 2: Typical Gain Characteristics
TPMHB0611EA
Figure 3: Dimensional Outline and Basing Diagram (Unit: mm)
TPMHA0442EA
TACCA0043EA
Socket
(E678-11N)
HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741
1
2
3
4
5
6
7
8
9
10
11
IC
DY1
DY3
DY5
DY7
P
DY8
DY6
DY4
DY2
K
SHORT PIN
FACEPLATE
PHOTOCATHODE
11 PIN BASE
8MIN.
10MAX.
45.0
1.5
10.5
0.5
4.3
9.5
10.5
11
3
3
9.5
100
10
1
0.1
0.01
150
100
200
250
300
350
400
WAVELENGTH (nm)
CA
THODE RADIANT
SENSITIVITY
(mA/W)
QUANTUM EFFICIENCY
(%)
CATHODE
RADIANT
SENSITIVITY
QUANTUM
EFFICIENCY
200
1500
2000
1000 1200
700
500
10
2
10
3
10
4
10
5
10
6
10
7
10
8
GAIN
SUPPLY VOLTAGE (V)
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