GENERAL
Parameter
Description/Value
Unit
Spectral Response
Wavelength of Maximum Response
Photocathode
Window Material
Dynode
Direct Interelectrode
Capacitances
Base
Suitable Socket
nm
nm
--
mm dia.
--
--
--
pF
pF
--
--
400 to 1200
800
Ag-O-Cs
25
Borosilicate glass
Box-and-grid
11
3.0
3.5
14-pin glass base
E678-14C (supplied)
Material
Minimum Effective Area
Structure
Number of Stages
Anode to Last Dynode
Anode to All Other Electrodes
PHOTOMULTIPLIER TUBES
R316, R316-02
MAXIMUM RATINGS (Absolute Maximum Values)
Information furnished by HA MAM ATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
1999 Hamamatsu Photonics K.K.
Subject to local technical requirements and regulations, availability of products included in this promotional material may var y. Please consult with our sales office.
Supply Voltage: 1250Vdc, K: Cathode, Dy: Dynode, P: Anode
Spectral Response for Red to Near Infrared Detection
28mm (1-1/8 Inch) Diameter, Ag-O-Cs Photocathode, 11-stage, Head-On Type
CHARACTERISTICS (at 25
C)
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Parameter
Min.
Unit
Parameter
Value
Unit
Supply Voltage
Average Anode Current
Ambient Temperature
1500
250
0.01
-80 to +50
Vdc
Vdc
mA
C
Between Anode and Cathode
Between Anode and Last Dynode
Cathode Sensitivity
Anode Sensitivity
Gain
Anode Dark Current at 4A/lm
(after 30min. storage in darkness)
Time Response
Electrodes
Ratio
K
Dy1
1
Dy2
1
Dy3
1
Dy4
1
Dy5
1
Dy6
1
Dy7
1
Dy8
1
Dy9
1
1
1
1
Dy10
Dy11
P
Luminous (2856K)
Radiant at 800nm (peak)
Red/White Ratio
(IR-D80A filter)
Quantum Efficiency
at 1.06
m
Luminous (2856K)
Radiant at 800nm (peak)
Anode Pulse Rise Time
Electron Transit Time
R316
R316-02
R316
R316-02
R316
R316-02
10
--
--
--
--
0.04
5
--
--
--
--
--
--
20
1.9
0.1
0.14
0.02
0.06
10
950
5.0
10
5
1000
2000
10
50
A/lm
mA/W
--
--
%
%
A/lm
A/W
--
nA
nA
ns
ns
--
--
--
--
--
--
--
--
--
3000
5000
--
--
Typ.
Max.
PHOTOMULTIPLIER TUBES R316, R316-02
Figure 1: Typical Spectral Response
TPMH1208E02
DEC. 1999
TPMHB0034EB
Figure 2: Typical Gain Characteristics
TPMHB0504EA
Figure 3: Dimensional Outline and Basing Diagram (Unit: mm)
TPMHA0016EC
TACCA0004EA
Socket (supplied)
(E678-14C)
200
400
600
800
1000
1200
WAVELENGTH (nm)
0.001
0.01
0.1
1
10
100
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
QUANTUM
EFFICIENCY
CATHODE
RADIANT
SENSITIVITY
R316
R316
R316-02
R316-02
SUPPLY VOLTAGE (V)
GAIN
at 25
C
10
1
10
2
10
3
10
4
10
5
10
6
10
7
500
600
700 800
1000
1500
1800
7
2.5
26
11.6
30
35
44
19.1
9
25
2- 3.5
HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: 44(20)8-367-3560, Fax: 44(20)8-367-6384
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741
HOMEPAGE URL http://www.hamamatsu.com
1
2
3
4
5
6
7
8
9
10
11
12
13
14
IC
DY3
DY2
DY7
DY9
DY11
P
DY10
DY8
DY6
DY4
DY5
K
DY1
SHORT PIN
28.5 0.5
25MIN.
112 2
13MAX.
FACEPLATE
PHOTOCATHODE
14 PIN BASE
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