GENERAL
Parameter
Description/Value
Unit
Spectral Response
Wavelength of Maximum Response
Photocathode
Window Material
Dynode
Base
Suitable Socket
nm
nm
--
mm dia.
--
--
--
--
--
160 to 850
420
Multialkali
46
Synthetic Silica
Box and Grid
10
15-pin glass base
E678-15B (supplied)
Material
Minimum Effective Area
Structure
Number of Stages
PHOTOMULTIPLIER TUBE
R375
MAXIMUM RATINGS (Absolute Maximum Values)
Information furnished by HA MAM ATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
2001 Hamamatsu Photonics K.K.
Subject to local technical requirements and regulations, availability of products included in this promotional material may var y. Please consult with our sales office.
160 to 850 nm Response (Multialkali)
51 mm (2 Inch) Diameter, 10-stage, Head-On Type
CHARACTERISTICS (at 25
C)
Parameter
Min.
Unit
Parameter
Value
Unit
Supply Voltage
Average Anode Current
Ambient Temperature
1500
250
0.1
-80 to +50
V dc
V dc
mA
C
Between Anode and Cathode
Between Anode and Last Dynode
Cathode Sensitivity
Anode Sensitivity
Gain
Anode Dark Current (after 30 min storage in darkness)
Time Response
Luminous (2856 K)
Radiant at 420 nm
Red/White Ratio (R-68)
Luminous (2856 K)
Radiant at 420 nm
Anode Pulse Rise Time
Electron Transit Time
80
--
--
20
--
--
--
--
--
150
64
0.2
80
3.4
10
4
5.3
10
5
5
9.0
70
A/lm
mA/W
--
A/lm
A/W
--
nA
ns
ns
--
--
--
--
--
--
20
--
--
Typ.
Max.
Supply Voltage: 1000 V dc, K: Cathode, Dy: Dynode, P: Anode
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
Electrodes
Ratio
K
G
Dy1
1
Dy2
1
Dy3
1
Dy4
Dy5
1
Dy6
1
Dy7
1
1
Dy8
Dy9
Dy10
P
1
1
1
1
1
PHOTOMULTIPLIER TUBE R375
Figure 1: Typical Spectral Response
TPMH1246E03
OCT. 2001 IP
TPMHB0643EA
Figure 2: Typical Gain Characteristics
TPMHB0598EA
Figure 3: Dimensional Outline and Basing Diagram (Unit: mm)
TPMHA0211EA
TACCA0201EA
Socket
(E678-15B)
500
600
700 800
1000
1200
1400
10
7
10
6
10
5
10
4
10
3
10
2
SUPPLY VOLTAGE (V)
GAIN
51.01.5
46MIN.
FACEPLATE
PHOTO-
CATHODE
1122
15 PIN BASE
13MAX.
5
6
1
2
3
4
7
8
9
10
11
12
13
14
15
DY4
DY6
K
DY10
IC
DY7
DY5
DY3
DY1
DY8
G
DY2
P
IC DY9
SHORT PIN
200
800
600
400
0.01
0.1
1
10
100
WAVELENGTH (nm)
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
1000
QUANTUM
EFFICIENCY
CATHODE
RADIANT
SENSITIVITY
HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it
HOMEPAGE URL http://www.hamamatsu.com
50
60
40
4
45
2
5
11.5
40
5
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