ELECTRON MULTIPLIER
R5150-10
PRELIMINARY DATA
FEB. 1998
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. 1998 Hamamatsu Photonics K.K
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Parameter
Value
Unit
Supply Voltage ( at a gain of 10
7
)
2000
V
Dark Counts ( at supply voltage of 2000V)
0.02
cps
Rise Time ( at supply voltage of 2000V)
2.5
ns
Operating Vacuum Level
10
-2
Pa
Bake-out Temperature
350
C
The R5150-10 is a new family of Hamamatsu ion detector. Thanks to Hamamatsu unique electron trajectory simulation
technology, it delivers high gain, fast response and wide dynamic range. A newly developed secondary emitting surface
also ensures long operating life and less gain deterioration even after being exposed to air. The R5150-10 also offers
stable, reliable operation even at low vacuum levels. The electron optics in the R5150-10 is not affected when used in
conjunction with conversion type dynodes, so that high sensitivity is maintained. The optional holder allows easy installa-
tion and replacement of the R5150-10 in mass spectrometers. Even with all these features, the price is still reasonable,
making the R5150-10 ideal as a replacement detector for CEM (channel electron multiplier).
FEATURES
High gain
Fast response
Wide dynamic range
High price performance
Long life
Stable operation even after expossed to air
SPECIFICATIONS
Maximum Ratings
Figure 1: Typical Gain
Figure 2: Life Characteristics
10
3
1000
1500
2000
3000
2500
10
4
10
5
10
6
10
7
10
8
10
9
SUPPLY VOLTAGE (V)
GAIN
TEM B0023EA
TEM B0024EA
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0
500
1000
1500
2000
2500
3000
3500
4000
ACCUMULATED OUTPUT CHARGE (C)
SUPPLY VOLTAGE (V) (AT GAIN 10
6
)
TEM 1006E01
FEB. 1998 SI
Printed in Japan(500)
ELECTRON MULTIPLIER R5150-10
HAMAMATSU PHOTONICS K.K., Electoron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384
North Europe: Hamamatsu Photonics Norden AB: Frgatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95
Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741
Figure 3: Output Waveform
Figure 4: Gain Variation vs. Output Current
TEM B0025EA
Figure 5: Dimensional Outline (Unit: mm)
Holder
E5174 (option)
TEM A0015EA
TACCA0171EA
TIME (2.5ns/div.)
OUTPUT VOLTAGE (2.5mV/div.)
SUPPLY VOLTAGE :1750V
RISE TIME
:2.5ns
FALL TIME
:4.5ns
PULSE WIDTH
:3.5ns
R
L
:50
10
6
10
-8
10
-7
10
-6
10
-5
10
-4
10
7
10
8
OUTPUT CURRENT (A)
GAIN (AT GAIN 10
6
)
TEM B0026EA
4
-
3.5
55
47
39
22
2
MOUNTING HOLE
EFFECTIVE AREA: 8
SIDE VIEW
TOP VIEW
BOTTOM VIEW
66
HAMAMATSU
34
HIGH VOLTAGE
ANODE
GND
PDF 
ZIP