ChipFind - документация

Электронный компонент: R5900U-00-C8

Скачать:  PDF   ZIP
Parameter
Description / Value
Unit
Spectral Response
300 to 650
nm
Wavelength of Maximum Response
420
nm
Photocathode
Material
Bialkali
Minimum Effective Area
22
22
mm
2
Window Material
Borosilicate glass
Dynode
Structure
Metal channel dynode
Number of Stages
11
Weight
Approx. 26
g
Suitable Socket
E678-32B (option)
GENERAL
POSITION SENSITIVE
PHOTOMULTIPLIER TUBE
R5900-00-C8 R5900U-00-C8
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. 1999 Hamamatsu Photonics K.K
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
FEATURES
4
+
4 Cross Plate Anode
Newly developed "Metal Channel Dynode"
High Speed Response
Parameter
Value
Unit
Supply Voltage
Between Anode and Cathode
900
Vdc
Average Anode Current
0.1
mA
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Min.
Typ.
Max.
Unit
Cathode Sensitivity
Luminous (2856 K)
70
A/lm
Blue (CS 5-58 filter)
7
8
A/lm-b
Anode Sensitivity
Luminous (2856 K)
15
50
A/lm
Gain
7
10
5
Anode Dark Current in Total of Anodes
2
nA
(after 30 min. storage in darkness)
Time Response
Anode Pulse Rise Time
1.4
ns
CHARACTERISTICS (at 25
C)
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
Electrodes
K
G
Dy1
Dy2
Dy3
Dy4
Dy5
Dy6
Dy7
Dy8
Dy9
Dy10
DY11
P
Ratio
0.5
1.5
2
1
1
1
1
1
1
1
1
1
0.5
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Supply Voltage: 800 Vdc, K: Cathode, G: Grid, Dy: Dynode, P: Anode
100
0
1000
1500
2000
0
500
2500
CHANNEL NUMBER (ch)
RELATIVE COUNTS
200
300
400
500
600
700
800
900
1000
SUPPLY
VOLTAGE : -800V
SOURCE : 22Na (511keV)
SCINTILLATOR: BGO
(19
19
30mm)
P.H.R.: 19.4%
WAVELENGTH (nm)
100
200
300
400
500
600
700
800
900
0.01
0.1
1
10
100
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
QUANTUM
EFFICIENCY
CATHODE
RADIANT
SENSITIVITY
10
0
10
1
10
2
10
3
10
4
10
5
400
600
1000
800
SUPPLY VOLTAGE (V)
GAIN
ANODE DARK CURRENT (A)
10
6
10
7
10
-12
10
-11
10
-10
10
-9
10
-8
10
-7
10
-6
10
-5
GAIN
ANODE DARK CURRENT
IN TOTAL OF ANODES
POSITION SENSITIVE PHOTOMULTIPLIER TUBE R5900-00-C8, R5900U-00-C8
Figure 1: Typical Spectral Response
Figure 2: Typical Gain and Anode Dark Current
TPMHB0266EA
TPMHB0339EA
Figure 3: Typical T.T.S. Characteristics
Figure 4: R5900-00-C8 Pulse Height Distribution
TPMHB0371EB
ANODE
T.T.S.
ANODE
T.T.S.
POSITION
(ns)
POSITION
(ns)
PX 1
0.68
PY 1
0.88
PX 2
0.59
PY 2
0.59
PX 3
0.59
PY 3
0.59
PX 4
0.68
PY 4
0.94
Please refer to Figure 7 and Figure 8.
20
0
20
30
10
POSITION (mm)
RELATIVE OUTPUT (%)
40
60
80
100
0
SUPPLY VOLTAGE
LIGHT SOURCE
SPOT DIAMETER
: -800V
: W-LAMP
: 3mm
PY4
PY3
PY2
PY1
20
0
20
30
10
POSITION (mm)
RELATIVE OUTPUT (%)
40
60
80
100
0
SUPPLY VOLTAGE
LIGHT SOURCE
SPOT DIAMETER
: -800V
: W-LAMP
: 3mm
PX4
PX3
PX2
PX1
Figure 5: Spatial Resolution of R5900-00-C8
TPMHB0345EA
TPMHB0344EA
Figure 6: Circuit Diagram Example and Positioning Histogram
TPMHC0104EC
X-Axis
Y-Axis
* Output of each anode under a light spot scanning at a center.
Positioning histogram of an 8
7 array of
2.8 mm
2.8 mm
30 mm BGO elements
for 511 keV
-rays.
Xa
Xa + Xb
Xa
Xb
Yc
Yd
Sum
EVENT SIGNAL
X ADDRESS
Yc
Yc + Yd
Y ADDRESS
GATE
PX4
PX3
PX2
PX1
PY4
PY3
PY2
PY1
8
7 BGO ARRAY
R5900-00-C8
R5900U-00-C8
A/D
A/D
A/D
A/D
INTEGRATION
INTEGRATION
INTEGRATION
INTEGRATION
TIMING PICK-OFF
and
ENERGY WINDOW
25.7
0.5
22
20.1
1.0
7.0
0.5
5MAX.
21- 0.45
Side View
Top View
2.75
5.5
0.5
2.75
0.5
27.7
0.5
25.7
0.5
22
1.2MAX.
5MAX.
27.7
0.4
2.54 PITCH
21- 1.5
4-R3.5
Bottom View
18
5.5
18
45
10
GUIDE MARK
PHOTOCATHODE
PX2
PX3
PX4
PX-ANODE
PY-ANODE
PY1
PY2
PY3
PY4
PX1
EFFECTIVE AREA
Figure 7: R5900-00-C8 Dimensional Outline and Basing Diagram (Unit: mm)
TPMHA0357EB
TPMHA0356EB
Figure 8: R5900U-00-C8 Dimensional Outline and Basing Diagram (Unit: mm)
1 2 3 4 5 6 7 8 9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
PY4 CUT
(IC)
PY3 CUT
(IC)
PY2 CUT
(IC)
CUT
(Dy11)
CUT
(G)
PX4
CUT
(IC)
PX3
PY1
PX2
CUT
(IC)
PX1
Dy11
Dy9
Dy7
Dy5
Dy3
Dy1
CUT
(Dy11)
G
K
Dy2
Dy4
Dy6
Dy10
Dy8
CUT
(Dy11)
Basing Diagram
Bottom View
CUT
(G)
CUT
(G)
Basing Diagram
K
Dy
P
IC
: Photocathode
: Dynode (Dy1-Dy11)
: Anode
: Internal Connection
(PX1-PX4)
(PY1-PY4)
(Do not use)
30
0.5
22
EFFECTIVE
AREA
1MAX.
22.0
0.5
4MAX.
12
PHOTOCATHODE
INSULATION
COVER
2.54 PITCH
21- 0.45
Side View
Bottom View
Top View
PX-ANODE
2.75
5.5
0.5
2.75
0.5
18
5.5
18
PX1
PX2
PX3
PX4
PY-ANODE
PY1
PY2
PY3
PY4
4.4
0.7
Basing Diagram
GUIDE
CORNER
1 2 3 4 5 6 7 8 9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
PY4
IC
PY3 IC
PY2 IC
IC
IC
PX4
IC
PX3
PY1
PX2
IC
PX1
Dy11
Dy9
Dy7
Dy5
Dy3
Dy1
IC
G
K
Dy2
Dy4
Dy6
Dy10
Dy8
IC
Basing Diagram
Bottom View
IC
IC
K
Dy
P
IC
: Photocathode
: Dynode (Dy1-Dy11)
: Anode
: Internal Connection
(PX1-PX4)
(PY1-PY4)
(Do not use)
[ACCESSORIES] (Unit: mm)
Socket E678-32B OPTION
D Type Socket Assembly E6669-01
TACCA0094ED
TPMHA0364EB
30.0
0.5
PIN No. 1
30.0
0.5
K
G
-H.V
: RG-174/U (RED)
SIGNAL OUTPUT
: 0.8D-QEV (GRAY)
: 110k
: 330k
: 220k
: 1M
: 51
: 0.01
F
R1, R14
R2
R3 to R13
R15
R16 to R18
C1 to C3
PX4
PY4
PX3
PY3
PX2
PY2
PX1
PY1
PX4
PY4
PX3
PY3
PX2
PY2
PX1
PY1
DY11
DY10
DY9
DY8
DY7
DY6
DY5
DY4
DY3
DY2
DY1
R11
R10
R9
R8
R7
R6
R5
R4
R3
R2
C3
C2
C1
R14
R13
R12
R18
R17
R16
R15
R1
10
20
12
22
14
16
24
15.0
0.5
450
POM HOUSING
ORIENTATION
BY MARKING
POTTING
COMPOUND
-H.V
: RG-174/U (RED)
PY2
PY3
PY4
PX2
PX3
PX1
PY1
PX4
13
8
27
7
28
6
29
5
30
4
31
3
1
32
22.86
20.32
20.32
22.86
12.7
12.7
2.92
4.45
1.57
0.51
2.54
POSITION SENSITIVE PHOTOMULTIPLIER TUBE R5900-00-C8, R5900U-00-C8
TPMH1139E05
SEPT. 1999 SI
Printed in Japan (1000)
WARNING
~High Voltage~
The product is operated at high voltage potential. Further, the metal housing of the product is
connected to the photocathode (potential) so that it becomes a high voltage potentail when the
product is operated at a negative high voltage (anode grounded).
Accordingly, extreme safety care must be taken for the electrical shock hazard to the operator or
the damage to the other instruments.
* PATENT: USA Pat. No. 5410211 PATENT PENDING: JAPAN 12, USA 8, EUROPE 9
HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: 44(20)8-367-3560, Fax: 44(20)8-367-6384
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741
HOMEPAGE URL http://www.hamamatsu.com