New Electro-Optical Design
Wide Effective Area, High Sensitivity Multialkali Photocathode
185 nm to 900 nm, 28 mm (1-1/8 Inch) Diameter, 9-stage, Side-on Type
GNew Electro-Optical Design Structure
GWide Effective Area ................................... 10 mm 24 mm
GHigh Cathode Sensitivity (Luminous) ..... 300 A/lm
GHigh Anode Sensitivity (Luminous) ......... 3000 A/lm
GBasing Diagram is same as the R928
GSpectroscopy
GBiomedical
GEnvironmental Monitoring
Figure 1: Typical Anode Uniformity
TPMSB0122EB
The center of the R5984
photocathode is slightly laid
out to the left side from guide
key, light path should be
adjusted by 2.5 mm to the
left side from the guide key.
*
RELATIVE SENSITIVITY (%)
DISTANCE FROM
GUIDE KEY (mm)
8
0
7
6
5
4
3
2
1
0
1
2
3
4
20
40
60
80
100
8 mm
2.5
0.5
2.5
0.5
10 MIN.
CENTER OF
PHOTOCATHODE
SUPPLY VOLTAGE
SPOT SIZE
WAVELENGTH
: 1000 V
: 0.5 mm
: 420 mm
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
PHOTOMULTIPLIER TUBE
R5984
FEATURES
APPLICATIONS
SPECIFICATIONS
GENERAL
Parameter
Description/Value Unit
185 to 900
400
Multialkali
10
24
UV glass
Circular Cage
9
Approx. 4
Approx. 6
11-pin base
E678-11A (Sold Separately)
E717-63 (Sold Separately)
Approx. 45
-30 to +50
-30 to +50
Spectral Response
Wavelength of Maximum Response
Photocathode MateriaI
Minimum Effective Area
Window Material
Dynode Structure
Number of Stages
Direct Interelectrode Capacitances
Anode to Last Dynode
Anode to All Other Electrodes
Base
SuitabIe Socket
SuitabIe D-Type Socket Assembly
Weight
Operating Ambient Temperature
Storage Temperature
nm
nm
--
mm
--
--
--
pF
pF
--
--
--
g
C
C
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Value
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
Average Anode Current
A
1250
250
0.1
V
V
mA
Unit
A: Averaged over any interval of 30 seconds maximum.
NOTE
PHOTOMULTIPLIER TUBE R5984
CHARACTERISTlCS (at 25
C)
NOTES
A:
B:
C:
D:
E:
F:
G:
The light source is a tungsten filament lamp operated at a distribution tem-
perature of 2856 K. Supply voltage is 100 volts between the cathode and all
other electrodes connected together as anode.
The value is cathode output current when a blue filter(Corning CS 5-58
polished to 1/2 stock thickness) is interposed between the light source and
the tube under the same condition as Note A.
Red/White ratio is the quotient of the cathode current measured using a red
filter (Toshiba R-68) interposed between the light source and the tube the
cathode current measured with the filter removed under the same condition
as Note A.
Measured with the same light source as Note A and with the anode-to-
cathode supply voltage and voltage distribution ratio shown in Table 1 be-
low.
Measured with the same supply voltage and voltage distribution ratio as
Note D after removal of light.
ENI is an indication of the photon-limited signal-to-noise ratio. It refers to
the amount of light in watts to produce a signal-to-noise ratio of unity in the
output of a photomultiplier tube.
where q = Electronic charge (1.60
10
-19
coulomb).
ldb = Anode dark current (after 30 minute storage) in amperes.
G = Gain.
f = Bandwidth of the system in hertz. 1 hertz is used.
S = Anode radiant sensitivity in amperes per watt at the wave-
length of peak response.
The rise time is the time for the output pulse to rise from 10 % to 90 % of
the peak amplitude when the whole photocathode is illuminated by a delta
function light pulse.
H:
J:
The electron transit time is the interval between the arrival of delta function
light pulse at the entrance window of the tube and the time when the anode
output reaches the peak amplitude. In measurement, the whole pho-
tocathode is illuminated.
Hysteresis is temporary instability in anode current after light and voltage
are applied.
ENI =
2q.ldb.G.
f
S
Electrode
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9
P
Distribution
Ratio
1
1
1
1
1
1
1
1
1
1
SuppIy Voltage : 1000 V dc
K : Cathode, Dy : Dynode, P : Anode
Table 1: Voltage Distribution Ratio
Hysteresis =
100 (%)
lmax. lmin.
li
(1)Current Hysteresis
The tube is operated at 750 volts with an anode current of 1 micro-ampere for
5 minutes. The light is then removed from the tube for a minute. The tube is
then re-illuminated by the previous light level for a minute to measure the
variation.
(2)Voltage Hysteresis
The tube is operated at 300 volts with an anode current of 0.1 micro-ampere
for 5 minutes. The light is then removed from the tube and the supply voltage
is quickly increased to 800 volts. After a minute, the supply voltage is then
reduced to the previous value and the tube is re-illuminated for a minute to
measure the variation.
TPMSB0002EA
TIME
max.
l
min.
l
i
l
ANODE
CURRENT
0
5
6
7 (minutes)
Parameter
Cathode Sensitivity
Quantum Efficiency at 260 nm (Peak)
Luminous
A
Radiant at 400 nm (Peak)
Blue Sensitivity Index (CS 5-58)
B
Red/White Ratio
C
Anode Sensitivity
Luminous
D
Radiant at 400 nm
Gain
D
Anode Dark Current
E
After 30 minute Storage in Darkness
ENI (Equivalent Noise Input)
F
Time response
Anode Pulse Rise Time
G
Electron Transit Time
H
Anode Current Stability
J
Current Hysteresis
Voltage Hysteresis
Unit
%
A/lm
mA/W
--
--
A/lm
A/W
nA
W
ns
ns
%
%
Typ.
26
300
76
9
0.32
3000
7.6
10
5
1
10
7
5
1.7
10
-16
2.2
22
0.1
1
Min.
--
140
--
--
--
400
--
--
--
--
--
--
--
--
Max
--
--
--
--
--
--
--
--
50
--
--
--
--
--
Figure 2: Typical Spectral Response
Figure 3: Anode Luminous Sensitivity and Gain
Characteristics
Figure 4: Temperature Characteristics of Dark Current
(at 1000 V)
TPMSB0003EB
TPMSB0163EA
TPMSB0121EB
ANODE DARK CURRENT (nA)
TEMPERATURE (
C)
0.01
-30
0
30
50
0.1
1
10
100
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
WAVELENGTH (nm)
100
0.01
300
200
400
600
700
500
800
900 1000
0.1
1
10
100
CATHODE RADIANT
SENSITIVITY
QUANTUM
EFFICIENCY
200
300
500
700
1000
10-
2
ANODE LUMINOUS SENSITIVITY (A/lm)
1500
GAIN
TYPICAL ANODE SENSITIVITY
TYPICAL GAIN
M
IN
IM
U
M
A
N
O
D
E
S
E
N
S
ITIV
ITY
10-
1
10
0
10
1
10
2
10
3
10
4
10
2
10
3
10
4
10
5
10
6
10
7
10
8
SUPPLY VOLTAGE (V)
PHOTOMULTIPLIER TUBE R5984
TPMS1033E02
JUL. 2002 IP
Figure 5: Dimensional Outline and Basing Diagram (Unit: mm)
Figure 6: Socket E678-11A (Sold Separately)
Figure 7: D Type Socket Assembly E717-63 (Sold Separately)
WarningPersonal Safety Hazards
Electrical ShockOperating voltages applied to this
device present a shock hazard.
Hamamatsu also provides C4900 series compact high voltage power
supplies and C6270 series DP type socket assemblies which incorporate
a DC to DC converter type high voltage power supply.
TACCA0002EH
TPMSA0035EB
TACCA0064EA
28.5 1.5
10 MIN.
2.5 0.5
32.2 0.5
24 MIN.
49.0 2.5
80 MAX.
94 MAX.
PHOTOCATHODE
11 PIN BASE
JEDEC No. B11-88
1
2
4
3
5
7
6
8
9
10
K
DY1
DY2
DY3
DY4
DY5
DY6
DY7
DY8
DY9
P
DIRECTION OF LIGHT
11
33
5
49
3.5
38
29
4
18
HAMAMATSU PHOTONICS K.K., Electron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it
WEB SITE http://www.hamamatsu.com
POTTING
COMPOUND
R1 to R10
C1 to C3
: 330 k
: 10 nF
3.5
33.0
0.3
49.0 0.3
29
38.0 0.3
4
450
10
5
31.0 0.5
HOUSING
(INSULATOR)
R10
R9
R8
R7
R6
R5
R4
R3
R2
R1
DY9
DY8
DY7
DY6
DY5
DY4
DY3
DY2
DY1
C3
C2
C1
SIGNAL GND
SIGNAL OUTPUT
RG-174/U(BLACK)
-HV
AWG22 (VIOLET)
P
K
10
POWER SUPPLY GND
AWG22 (BLACK)
SOCKET
PIN No.
PMT
9
8
7
6
5
4
3
2
1
11
30.0
+0
-1
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